200mm 8inch GaN pa substrate yesafire Epi-layer wafer
Sumo yechigadzirwa
Chikamu cheGaN-on-Sapphire chine mainch masere chinhu chemhando yepamusoro chemhando yepamusoro chakagadzirwa neGallium Nitride (GaN) layer inorimwa pachikamu cheSapphire. Chigadzirwa ichi chine hunhu hwakanaka hwekufambisa midziyo yemagetsi uye chakanakira kugadzirwa kwemidziyo yesemiconductor ine simba guru uye ine frequency yakakwira.
Nzira Yokugadzira
Maitiro ekugadzira anosanganisira kukura kweGaN layer paSapphire substrate uchishandisa matekiniki epamusoro akadai se metal-organic chemical vapor deposition (MOCVD) kana molecular beam epitaxy (MBE). Kuiswa kwechinhu ichi kunoitwa mumamiriro ezvinhu akarongwa kuti ive nechokwadi chekuti kristalo yakanaka uye kuti firimu rakafanana.
Mashandisirwo
Chikamu cheGaN-on-Sapphire chine 8-inch chinoshandiswa zvakanyanya muminda yakasiyana-siyana inosanganisira kutaurirana kwe microwave, radarsystems, wireless technology, uye optoelectronics. Mamwe emashandisirwo akajairika anosanganisira:
1. RF simba amplifiers
2. Indasitiri yemwenje ye LED
3. Midziyo yekutaurirana isina waya
4. Zvishandiso zvemagetsi zvenzvimbo dzinopisa zvakanyanya
5. Ozvishandiso zvemagetsi zveptoelectronic
Zvimiro zveChigadzirwa
-Kukura: Saizi ye substrate ine dhayamita ye 8 inches (200 mm).
- Hunhu Hwepamusoro: Pamusoro pacho pakanyatsokwenenzverwa uye panoratidza hunhu hwakanaka hwakaita segirazi.
- Ukobvu: Ukobvu hweGaN layer hunogona kugadziriswa zvichienderana nezvinodiwa.
- Kurongedza: Substrate yacho yakanyatsoiswa muzvinhu zvinodzivirira static kudzivirira kukuvara panguva yekufambisa.
- Kutungamira Kwakatsetseka: Substrate ine nzvimbo yakatarwa yekutungamira kubatsira mukugadzirisa uye kubata wafer panguva yekugadzira mudziyo.
- Mamwe ma parameter: Hunhu hweukobvu, resistivity, uye dopant concentration zvinogona kugadziriswa zvichienderana nezvinodiwa nevatengi.
Nehunhu hwayo hwepamusoro uye mashandisirwo ayo akasiyana-siyana, iyo substrate yeGaN-on-Sapphire ye8-inch isarudzo yakavimbika yekugadzira zvishandiso zve semiconductor zvinoshanda zvakanyanya mumaindasitiri akasiyana-siyana.
Kunze kweGaN-On-Sapphire, tinogonawo kupa muchikamu chekushandisa kwesimba remagetsi, mhuri yezvigadzirwa inosanganisira mawafer e-epitaxial e-8-inch AlGaN/GaN-on-Si uye mawafer e-epitaxial e-8-inch P-cap AlGaN/GaN-on-Si epitaxial e-8-inch. Panguva imwe chete, takagadzira tekinoroji yayo yepamusoro yeGaN epitaxy ye-8-inch mumunda we microwave, uye takagadzira wafer ye-epitaxy e-8-inch AlGaN/ GAN-on-HR Si epitaxy inosanganisa kushanda kwepamusoro nehukuru hwakakura, mutengo wakaderera uye inoenderana neyakajairwa 8-inch device processing. Kuwedzera kune gallium nitride yakagadzirwa nesilicon, tinewo mhando yezvigadzirwa zveAlGaN/GaN-on-SiC epitaxial wafers kuti isangane nezvinodiwa nevatengi zvezvinhu zve gallium nitride epitaxial zvakagadzirwa nesilicon.
Dhayagiramu Yakadzama
