200mm 8inch GaN pasafire Epi-layer wafer substrate
Product sumo
Iyo 8-inch GaN-on-Sapphire substrate ndeyemhando yepamusoro semiconductor zvinhu inoumbwa neGallium Nitride (GaN) layer yakakura paSapphire substrate. Ichi chinyorwa chinopa zvakanakisa zvekufambisa zvemagetsi zvivakwa uye chakanakira kugadzirwa kweyepamusoro-simba uye yakakwirira-frequency semiconductor zvishandiso.
Manufacturing Method
Maitiro ekugadzira anosanganisira epitaxial kukura kweGaN layer paSapphire substrate uchishandisa matekiniki epamusoro sesimbi-organic chemical vapor deposition (MOCVD) kana molecular beam epitaxy (MBE). Iyo deposition inoitwa pasi pemamiriro akadzorwa kuti ave nechokwadi chepamusoro chekristaro mhando uye kufanana kwefirimu.
Applications
Iyo 8-inch GaN-on-Sapphire substrate inowana maapplication akakura mundima dzakasiyana siyana kusanganisira microwave communications, radarsystems, wireless technology, uye optoelectronics. Zvimwe zvezvishandiso zvakajairika zvinosanganisira:
1. RF simba amplifiers
2. LED chiedza indasitiri
3. Wireless network kutaurirana michina
4. Zvigadzirwa zvemagetsi zvemamiriro ekupisa kwepamusoro
5. Optoelectronic zvishandiso
Zvigadzirwa Zvinotsanangurwa
-Dimension: Iyo substrate saizi ndeye 8 inches (200 mm) mudhayamita.
-Surface Hunhu: Iyo yepamusoro yakakwenenzverwa kusvika padanho repamusoro rekutsvedzerera uye inoratidza yakanakisa girazi-semhando.
- Ukobvu: Iyo GaN layer ukobvu inogona kugadziridzwa zvichienderana nezvinodiwa chaizvo.
- Packaging: Iyo substrate yakanyatso kurongedzwa mune anti-static zvinhu kudzivirira kukuvara panguva yekufambisa.
-Oriental Flat: Iyo substrate ine chaiyo yekumisikidza furati yekubatsira mukurongeka kwewafer uye kubata panguva yekugadzira mudziyo.
- Mamwe ma paramita: Iwo chaiwo ehukobvu, resistivity, uye dopant concentration inogona kugadzirwa maererano nezvinodiwa nemutengi.
Iine hukuru hwayo hwezvinhu uye kushandiswa kwakasiyana-siyana, iyo 8-inch GaN-on-Sapphire substrate isarudzo yakavimbika yekuvandudza kwepamusoro-inoshanda semiconductor zvishandiso mumaindasitiri akasiyana.
Kunze kweGaN-On-Sapphire, isu tinogonawo kupa mumunda wekushandisa magetsi ekushandisa, mhuri yechigadzirwa inosanganisira 8-inch AlGaN/GaN-on-Si epitaxial wafers uye 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. Panguva imwecheteyo, takavandudza mashandisirwo ehunyanzvi hwayo hwepamusoro 8-inch GaN epitaxy mumunda wemicrowave, uye takagadzira 8-inch AlGaN/GAN-on-HR Si epitaxy wafer inosanganisa kuita kwepamusoro nehukuru hukuru, mutengo wakaderera uye unoenderana neyakajairwa 8-inch mudziyo kugadzirisa. Pamusoro pesilicon-based gallium nitride, isu tinewo mutsara wechigadzirwa cheAlGaN/GaN-on-SiC epitaxial wafers kuti isangane nezvinodiwa nevatengi zvesilicon-based gallium nitride epitaxial materials.
Detailed Diagram
