50.8mm 2inch GaN pasafire Epi-layer wafer

Tsanangudzo Pfupi

Seyechitatu chizvarwa semiconductor zvinhu, gallium nitride ine zvakanakira zvekupisa tembiricha kuramba, kuenderana kwakanyanya, yakakwira yekupisa conductivity uye yakakura band gap.Zvinoenderana neakasiyana substrate zvinhu, gallium nitride epitaxial masheets anogona kukamurwa kuita zvikamu zvina: gallium nitride yakavakirwa pagallium nitride, silicon carbide based gallium nitride, sapphire based gallium nitride uye silicon yakavakirwa gallium nitride.Silicon-based gallium nitride epitaxial sheet ndiyo inonyanya kushandiswa chigadzirwa ine mutengo wakaderera wekugadzira uye yakakura kugadzira tekinoroji.


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Kushandiswa kwegallium nitride GaN epitaxial sheet

Zvichienderana nekuita kwegallium nitride, gallium nitride epitaxial machipisi anonyanya kukodzera simba repamusoro, frequency yakakwirira, uye low voltage application.

Inoratidzwa mu:

1) High bandgap: High bandgap inovandudza voltage level ye gallium nitride madivayiri uye inogona kubudisa simba rakakwirira kudarika gallium arsenide madivayiri, iyo inonyanya kukodzera 5G yekutaurirana base stations, radar yeuto uye mamwe minda;

2) Kunyanya kutendeuka kwepamusoro: kupikisa kwegallium nitride kushandura magetsi emagetsi emagetsi ndeye 3 mirairo yehukuru yakaderera pane yezvigadzirwa zvesilicon, izvo zvinogona kuderedza zvakanyanya kurasikirwa kwe-switching;

3) High thermal conductivity: iyo yakanyanya kupisa conductivity ye gallium nitride inoita kuti ive yakanakisa kupisa kupisa kwekuita, inokodzera kugadzirwa kwesimba repamusoro-soro, kupisa-kupisa uye mamwe minda yemidziyo;

4) Kuparara kwesimba remumunda wemagetsi: Kunyangwe kuparara kwesimba remagetsi egallium nitride kuri padyo neiyo yesilicon nitride, nekuda kweiyo semiconductor process, material lattice mismatch nezvimwe zvinhu, kushivirira kwemagetsi kwegallium nitride zvishandiso kunowanzo kuita 1000V, uye iyo kushandiswa kwakachengeteka voltage kazhinji iri pasi pe650V.

Item

GaN-TCU-C50

GaN-TCN-C50

GaN-TCP-C50

Dimensions

e 50.8mm ± 0.1mm

Ukobvu

4.5±0.5 um

4.5±0.5um

Orientation

C-ndege(0001) ±0.5°

Conduction Type

N-mhando (isina kuvharwa)

N-mhando (Si-doped)

P-rudzi (Mg-doped)

Resistivity(3O0K)

<0.5 Q・cm

<0.05 Q・cm

~ 10 Q・cm

Carrier Concentration

<5x1017cm-3

> 1x1018cm-3

> 6x1016 cm-3

Mobility

~ 300 cm2/Vs

~ 200 cm2/Vs

~ 10cm2/Vs

Dislocation Density

Zvisingasviki 5x108cm-2(yakaverengerwa neFWHMs yeXRD)

Substrate chimiro

GaN paSapphire(Standard: SSP Option: DSP)

Inoshandiswa Surface Area

> 90%

Package

Yakaputirwa mukirasi 100 yakachena kamuri nharaunda, mumakaseti e25pcs kana imwechete wafer midziyo, pasi pemhepo yenitrogen.

* Humwe ukobvu hunogona kugadzirwa

Detailed Diagram

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