100mm 4inch GaN paSapphire Epi-layer wafer Gallium nitride epitaxial wafer

Tsanangudzo Pfupi

Gallium nitride epitaxial sheet inomiririra chizvarwa chechitatu che wide band gap semiconductor epitaxial zvinhu, ine zvinhu zvakanakisa senge wide band gap, high breakdown field simba, high thermal conductivity, high electron saturation drift speed, simba reradiation resistance uye yakakwirira. kugadzikana kwemakemikari.


Product Detail

Product Tags

Iyo yekukura maitiro eGaN yebhuruu LED quantum tsime chimiro.Detailed process flow irikutevera

(1) Kupisa kwekushisa kwepamusoro, sapphire substrate inotanga kupisa kusvika 1050 ℃ mumhepo yehydrogen, chinangwa ndechekuchenesa pasi pevhu;

(2) Kana iyo substrate tembiricha inodonha kusvika 510 ℃, yakaderera-tembiricha GaN/AlN buffer layer ine ukobvu hwe30nm inoiswa pamusoro pesafire substrate;

(3) Tembiricha inokwira kusvika ku10 ℃, iyo reaction gas ammonia, trimethylgallium uye silane inojoinwa, zvichiteerana inodzora inoenderana yekuyerera mwero, uye iyo silicon-doped N-mhando GaN ye4um ukobvu inokura;

(4) The reaction gas ye trimethyl aluminium uye trimethyl gallium yakashandiswa kugadzirira silicon-doped N-type A-makondinendi ane hutema hwe 0.15um;

(5) 50nm Zn-doped InGaN yakagadzirirwa nejekiseni trimethylgallium, trimethylindium, diethylzinc uye ammonia pakupisa kwe8O0 ℃ uye kutonga kuyerera kwakasiyana-siyana maererano;

(6) Kupisa kwakawedzera kusvika ku1020 ℃, trimethylaluminum, trimethylgallium uye bis (cyclopentadienyl) magnesium yakaiswa kugadzirira 0.15um Mg doped P-type AlGaN uye 0.5um Mg doped P-type G ropa glucose;

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(8) Etching paP-mhando G stasis pamusoro kuratidza N-mhando G stasis pamusoro;

(9) Evaporation yeNi/A inobata ma plates pa p-GaNI pamusoro, evaporation ye △/Al contact plates pa ll-GaN surface kuti iite ma electrode.

Zvinotsanangurwa

Item

GaN-TCU-C100

GaN-TCN-C100

Dimensions

e 100 mm ± 0.1 mm

Ukobvu

4.5±0.5 um Inogona kugadzirwa

Orientation

C-ndege(0001) ±0.5°

Conduction Type

N-mhando (isina kuvharwa)

N-mhando (Si-doped)

Resistivity (300K)

<0.5 Q・cm

<0.05 Q・cm

Carrier Concentration

<5x1017cm-3

> 1x1018cm-3

Mobility

~ 300 cm2/Vs

~ 200 cm2/Vs

Dislocation Density

Zvisingasviki 5x108cm-2(yakaverengerwa neFWHMs yeXRD)

Substrate chimiro

GaN paSapphire(Standard: SSP Option: DSP)

Inoshandiswa Surface Area

> 90%

Package

Yakaputirwa mukirasi 100 yakachena kamuri nharaunda, mumakaseti e25pcs kana imwechete wafer midziyo, pasi pemhepo yenitrogen.

Detailed Diagram

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WechatIMG540_
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