Wafer yeSilicon Dioxide SiO2 yakakora Yakakweshwa, Prime Uye Test Grade
Kusuma bhokisi rewafer
| Chigadzirwa | Mawafer eThermal Oxide (Si+SiO2) |
| Nzira Yokugadzira | LPCVD |
| Kupukuta Pamusoro | SSP/DSP |
| Dhayamita | 2inch / 3inch / 4inch / 5inch / 6inch |
| Rudzi | Rudzi rweP / N |
| Ukobvu hweOxidation Layer | 100nm ~1000nm |
| Kudzidziswa | <100> <111> |
| Kudzivirira kwemagetsi | 0.001-25000(Ω•cm) |
| Kushandiswa | Inoshandiswa pakutakura sample yemwaranzi yesynchrotron, PVD/CVD coating se substrate, magnetron sputtering growth sample, XRD, SEM,Simba reatomu, infrared spectroscopy, fluorescence spectroscopy nezvimwe zvinoshandiswa pakuongorora, mamorekuru ekukura kwe epitaxial substrates, X-ray ongororo ye crystalline semiconductors |
Mawafer eSilicon oxide imhando yemafirimu esilicon dioxide anokura pamusoro pemawafer esilicon achishandisa okisijeni kana mhute yemvura pakupisa kwakanyanya (800°C ~ 1150°C) achishandisa nzira yekupisa ine michina yefurnace inomanikidzwa nemhepo. Ukobvu hwenzira iyi hunobva pa50 nanometers kusvika 2 microns, tembiricha yenzira iyi inosvika 1100 degrees Celsius, nzira yekukura yakakamurwa kuita mhando mbiri dze "oxygen yakanyorova" uye "oxygen yakaoma". Thermal Oxide i "grown" oxide layer, ine uniformity yakakwira, densification iri nani uye dielectric strength yakakwira kupfuura CVD deposited oxide layers, zvichikonzera mhando yepamusoro.
Kuomesa Okisijeni
Silicon inosangana neokisijeni uye oxide layer inogara ichifamba ichienda kune substrate layer. Dry oxidation inofanira kuitwa patembiricha iri pakati pe850 kusvika 1200°C, nekukura kwakaderera, uye inogona kushandiswa pakukura kwegedhi rakadzivirirwa neMOS. Dry oxidation inofarirwa pane wet oxidation kana silicon oxide layer yemhando yepamusoro, yakatetepa zvikuru ichidiwa. Kugona kweoxidation yakaoma: 15nm~300nm.
2. Kunyorova kweOxidation
Nzira iyi inoshandisa mhute yemvura kugadzira oxide layer nekupinda muchubhu yefurnace pasi pekupisa kwakanyanya. Kuwanda kwe wet oxygen oxidation kwakaipa zvishoma pane dry oxygen oxidation, asi kana ichienzaniswa ne dry oxygen oxidation, zvakanakira kuti ine mwero wekukura wakakwira, wakakodzera kukura kwefirimu inopfuura 500nm. Kukwanisa kwe wet oxidation: 500nm~2µm.
Tubhu reAEMD reAEMD remumhepo ine simba reoxidation furnace ichubhu yeCzech horizontal furnace, ine kugadzikana kwakanyanya, kufanana kwakanaka kwefirimu uye kutonga kwakanaka kwezvikamu. Tubhu resilicon oxide furnace rinogona kugadzirisa kusvika mawafers makumi mashanu pachubhu imwe neimwe, ine kuenzana kwakanaka mukati nepakati pewafers.
Dhayagiramu Yakadzama
