SiC
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Silicon Carbide (SiC) Substrate yeSirista imwe chete – 10×10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer yeMOS kana SBD
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SiC Epitaxial Wafer yeMagetsi Emagetsi – 4H-SiC, N-type, Low Defect Density
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4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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3 inch High Purity (Isina Kubviswa) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um ukobvu
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4H-N/6H-N SiC Wafer Research production Dummy grade Dia150mm Silicon carbide substrate
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Wafer yakaputirwa neAu，wafer yesafire，wafer yesilicon，wafer yeSiC，2inch 4inch 6inch，Goridhe rakaputirwa negoridhe 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silicon carbide substrate 6H-N Rudzi 0.33mm 0.43mm kupolisha kwemativi maviri Kupisa kwakanyanya kunoshandisa simba shoma
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SiC substrate 3inch 350um ukobvu HPSI mhando Prime Giredhi Dummy giredhi
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Silicon Carbide SiC Ingot 6inch N mhando Dummy/prime grade thickness inogona kugadziriswa