English

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Tsvagiridzo giredhi 500um ukobvu Featured Image
  • 4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu
  • 4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu

Tsanangudzo Pfupi

Silicon carbide wafers anoshandiswa mumidziyo yemagetsi semagetsi diode, MOSFETs, yakakwirira-simba microwave zvishandiso, uye RF transistors, zvichiita kuti simba rishanduke uye kutonga kwesimba.SiC wafers uye substrates zvakare anowana kushandiswa mumotokari dzemagetsi, aerospace masisitimu, uye hunyanzvi hwesimba remagetsi.


Product Detail

Product Tags

Iwe Unosarudza Sei Silicon Carbide Wafers & SiC Substrates?

Pakusarudza silicon carbide (SiC) wafers uye substrates, pane akati wandei zvinhu kufunga.Heano mamwe maitiro akakosha:

Rudzi rwemhando: Sarudza rudzi rweSiC zvinhu zvinoenderana nekushandisa kwako, se4H-SiC kana 6H-SiC.Iyo inonyanya kushandiswa sekristaro chimiro ndeye 4H-SiC.

Doping Type: Sarudza kana iwe uchida doped kana undoped SiC substrate.Mhando dzedoping dzakajairika iN-mhando (n-doped) kana P-mhando (p-doped), zvichienderana nezvaunoda chaizvo.

Crystal Hunhu: Ongorora mhando yekristaro yeSiC wafers kana substrates.Hunhu hunodiwa hunotarwa nema parameter akadai sehuwandu hwekuremara, crystallographic orientation, uye kushata kwepamusoro.

Wafer Diameter: Sarudza iyo yakakodzera saizi yewafer zvichienderana nekushandisa kwako.Saizi dzakajairika dzinosanganisira 2 inches, 3 inches, 4 inches, uye 6 inches.Kukura kwakaita dhayamita, ndiko kuwedzera goho raunokwanisa kuwana pawafer.

Ukobvu: Funga nezvehukobvu hunodiwa hweSiC wafers kana substrates.Yakajairika ukobvu sarudzo dzinobva kune mashoma mamicrometer kusvika kumazana akati wandei ma micrometer.

Oientation: Sarudza iyo crystallographic yekutarisa inoenderana nezvinodiwa zvekushandisa kwako.Mamiriro akajairika anosanganisira (0001) ye4H-SiC uye (0001) kana (0001̅) ye6H-SiC.

Surface Pedzisa: Ongorora kupera kwepasi kweSiC wafers kana substrates.Nzvimbo yacho inofanira kunge yakatsetseka, yakakwenenzverwa, uye isina mavanga kana zvinosvibisa.

Repuretor Repure: Sarudza mutengesi ane mukurumbira ane ruzivo rwakakura mukugadzira emhando yepamusoro SiC wafers uye substrates.Funga zvinhu zvakaita sekugadzira kugona, kutonga kwemhando, uye kuongororwa kwevatengi.

Mutengo: Funga nezvezvinorehwa nemutengo, kusanganisira mutengo pawafer kana substrate uye chero mari yekuwedzera yekugadziridza.

Zvakakosha kunyatsoongorora zvinhu izvi uye kubvunzana nenyanzvi dzeindasitiri kana vatengesi kuti vaone kuti maSiC wafers akasarudzwa uye ma substrates anozadzisa zvaunoda zvekushandisa.

Detailed Diagram

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu (1)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu (2)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu (3)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research giredhi 500um ukobvu (4)
  • Zvakapfuura:
  • Zvinotevera:
    • Nyora meseji yako pano ugotitumira

    Zvigadzirwa zvikamu

    Baya Enter kutsvaga kana ESC kuvhara