8inch 200mm Silicon Carbide SiC Wafers 4H-N mhando Kugadzira giredhi 500um ukobvu

Kukura: 8inch;

Diameter: 200mm±0.2;

Ukobvu: 500um±25;

Surface Oriental: 4 kune [11-20] ± 0.5 °;

Notch orientation:[1-100]±1°;

Notch kudzika: 1±0.25mm;

Micropipe: <1cm2;

Hex Plates: Hapana Inobvumirwa;

Kusagadzikana: 0.015~0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: nzvimbo <1%

TTV≤15um;

Warp≤40um;

Bow≤25um;

Poly nzvimbo: ≤5%;

Scratch: <5 uye Cumulative Length< 1 Wafer Diameter;

Chips/Indents: Hapana mvumo D> 0.5mm Kufara uye Kudzika;

Kutsemuka: Hapana;

Stain: Hapana

Wafer edge: Chamfer;

Kupera kwepamusoro: Kaviri Side Polish, Si Face CMP;

Packing: Multi-wafer Cassette Kana Single Wafer Container;

Izvo zvinonetsa zvino mukugadzirira kwe200mm 4H-SiC makristasi mainl

1) Kugadzirira kwemhando yepamusoro 200mm 4H-SiC makristasi embeu;

2) Saizi hombe tembiricha munda kwete-uniformity uye nucleation maitiro kudzora;

3) Kubudirira kwekufambisa uye kushanduka kwegasi zvikamu mukukura kwekristaro kukura masisitimu;

4) Crystal kupaza uye kuremara kuwanda kunokonzerwa nehukuru hukuru hwekupisa kushushikana kunowedzera.

Kukunda matambudziko aya uye kuwana mhando yepamusoro 200mm SiC waferssolutions inokurudzirwa:

Panyaya ye200mm yembeu yekristaro kugadzirira, yakakodzera tembiricha yekuyerera kwemunda, uye kuwedzera gungano zvakadzidzwa uye zvakagadzirirwa kufunga nezvemhando yekristaro nekukura kwekuwedzera;Kutanga ne 150mm SiC se: d crystal, ita mbeu yekristaro iteration kuti zvishoma nezvishoma iwedzere SiC crystasize kusvika yasvika 200mm;Kuburikidza nekukura kwekristaro yakawanda uye processiig, zvishoma nezvishoma wedzera kunaka kwekristaro munzvimbo inokura yekristaro, uye kusimudzira mhando ye200mm mhodzi makristasi.

Panyaya ye200mm conductive crystal uye substrate kugadzirira, tsvakiridzo yakagadzirisa tembiricha feld uye kuyerera kwemunda dhizaini yekukura kukuru kwekristaro, kuitisa 200mm conductive SiC crystal kukura, uye kutonga doping kufanana.Mushure mekugadzirwa kwakashata uye kuumbwa kwekristaro, 8-inchelectricaly conductive 4H-SiC ingot ine dhayamita yakajairwa yakawanikwa.Mushure mekucheka, kukuya, kupukuta, kugadzirisa kuti uwane SiC 200mm wafers nehupamhi hwe525um kana zvakadaro.