4H-N/6H-N SiC Wafer Reasearch kugadzira Dummy giredhi Dia150mm Silicon carbide substrate

Tsanangudzo Pfupi

Tinogona kupa yakanyanya tembiricha superconducting yakaonda firimu substrate, magineti matete mafirimu uye ferroelectric yakaonda firimu substrate, semiconductor crystal, optical crystal, laser crystal zvinhu, panguva imwechete inopa kutaridzika, kucheka kwekristaro, kukuya, kupukuta uye mamwe masevhisi ekugadzirisa.Yedu maSiC substrates anobva kuTankeblue Factory kuChina.

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Product Detail

Product Tags

6 inch dhayamita silicon carbide (SiC) substrate tsanangudzo

Giredhi	Zero MPD	Kugadzirwa	Research Giredhi	Dummy Grade
Diameter	150.0mm±0.25mm
Ukobvu	4H-N	350um±25um
	4H-SI	500um±25um
Wafer Orientation	Paaxis :<0001>±0.5°ye4H-SI Kunze kweaxis : 4.0° kuenda <1120>±0.5° nokuda kwe4H-N
Primary Flat	{10-10}±5.0°
Primary Flat Length	47.5mm±2.5mm
Kusabatanidzwa kumucheto	3mm
TTV / Bow / Warp	≤15um/≤40um/≤60um
Micropipe Density	≤1cm-2	≤5cm-2	≤15cm-2	≤50cm-2
Resistivity 4H-N 4H-SI	0.015~0.028Ω!cm
	≥1E5Ω!cm
Kukasharara	Polish Ra ≤1nm CMP Ra≤0.5nm
# Inotsemuka neyakakura kusimba mwenje	Hapana		1 inobvumirwa ≤2mm	Cumulative kureba ≤10mm, single kureba≤2mm
* Hex mahwendefa nechiedza chakanyanya kusimba	Yakawedzerwa nzvimbo ≤1%		Yakawedzerwa nzvimbo ≤ 2%	Kuwedzera nzvimbo ≤ 5%
*Polytype nzvimbo nemwenje wakanyanya kusimba	Hapana		Yakawedzerwa nzvimbo ≤ 2%	Kuwedzera nzvimbo ≤ 5%
*&Kukweshwa nechiedza chakanyanya	3 makwara kusvika 1 x wafer dhayamita yakawedzera kureba		5 zvikweshwa kusvika 1 x wafer dhayamita yakawedzera kureba	5scratches kusvika 1 x wafer dhayamita yakawedzera kureba
Edge chip	Hapana		3 inobvumirwa, ≤0.5mm imwe neimwe	5 inobvumirwa, ≤1mm imwe neimwe
Kusvibiswa nechiedza chepamusoro	Hapana

Kutengesa & Basa reMutengi

Kutenga Zvinhu

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Hunhu

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Service

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isu tiri parutivi rwako chero nguva kana uine dambudziko, uye gadzirisa mu10hours.