Wafer yemhando yeP-type SiC 4H/6H-P 3C-N 6inch ukobvu 350 μm ine Kurongeka Kwakatsetseka Kwepakutanga
Tsanangudzo4H/6H-P Rudzi rweSiC Composite Substrates Tafura yeparamende yakajairika
6 dhayamita ye inch Silicon Carbide (SiC) Substrate Tsanangudzo
| Giredhi | Kugadzirwa kweMPD kusinaGiredhi (Z) Giredhi) | Kugadzirwa KwakajairikaGiredhi (P) Giredhi) | Giredhi reDummy (D Giredhi) | ||
| Dhayamita | 145.5 mm~150.0 mm | ||||
| Ukobvu | 350 μm ± 25 μm | ||||
| Kudzidziswa kweWafer | -Offaxis: 2.0°-4.0°kunanga [1120] ± 0.5° ye4H/6H-P, Pa axis:〈111〉± 0.5° ye3C-N | ||||
| Kuwanda kwepombi dze micropombi | 0 cm-2 | ||||
| Kuramba | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-rudzi 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Kutungamira Kwakatsetseka Kwepakutanga | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Hurefu Hwepamusoro-soro | 32.5 mm ± 2.0 mm | ||||
| Kureba Kwechipiri Kwakatsetseka | 18.0 mm ± 2.0 mm | ||||
| Kudzidziswa kwechipiri kwakadzikama | Silicon yakatarisana mudenga: 90° CW. kubva kuPrime flat ± 5.0° | ||||
| Kusabatanidzwa kweMupendero | 3 mm | 6 mm | |||
| LTV/TTV/Uta /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Kuomarara | ChiPolish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Mipata yemucheto nechiedza chakasimba | Hapana | Kureba kwakaunganidzwa ≤ 10 mm, kureba kumwe chete ≤2 mm | |||
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤0.1% | |||
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Hapana | Nzvimbo yakaunganidzwa ≤3% | |||
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤3% | |||
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Hapana | Kureba kwakawedzerwa ≤1 × dhayamita yechinwiwa | |||
| Edge Chips High By Intensity Light | Hapana chinobvumidzwa ≥0.2mm upamhi uye kudzika | 5 inobvumirwa, ≤1 mm imwe neimwe | |||
| Kusvibiswa kweSilicon pamusoro Nesimba Rakanyanya | Hapana | ||||
| Kurongedza | Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete | ||||
Zvinyorwa:
※ Miganhu yekukanganisika inoshanda pamusoro pewafer yese kunze kwenzvimbo isina kuvharwa nemupendero. # Mavanga acho anofanira kutariswa pachiso cheSi o
Wafer yemhando yeP-type SiC, 4H/6H-P 3C-N, ine saizi yayo ye 6-inch uye ukobvu hwe 350 μm, inoita basa rakakosha mukugadzirwa kwemagetsi emagetsi anoshanda zvakanyanya mumaindasitiri. Kufambisa kwayo kwakanaka kwekupisa uye voltage yakakwira zvinoita kuti ive yakakodzera kugadzira zvinhu zvakaita semaswitch emagetsi, ma diode, uye ma transistors anoshandiswa munzvimbo dzinopisa zvakanyanya senge mota dzemagetsi, magridi emagetsi, uye masisitimu esimba rinodzokororwa. Kugona kwewafer kushanda zvakanaka mumamiriro ezvinhu akaoma kunoita kuti ishande zvakanaka mumaindasitiri anoda simba rakawanda uye kushanda zvakanaka kwesimba. Pamusoro pezvo, kurongeka kwayo kwekutanga kwakatsetseka kunobatsira mukugadzirisa kwakanyatsojeka panguva yekugadzira michina, kusimudzira kushanda zvakanaka kwekugadzira uye kugara zvakanaka kwechigadzirwa.
Zvakanakira zveN-type SiC composite substrates zvinosanganisira
- Kufambisa Kwekupisa Kwakanyanya: Mawafer emhando yeP SiC anonyatsobvisa kupisa, zvichiita kuti akwanise kushandiswa pakupisa kwakanyanya.
- Kuparara Kwemagetsi Kwakanyanya: Inokwanisa kutsungirira ma voltage akakwira, ichivimbisa kuvimbika kwemagetsi ane simba uye zvishandiso zvine simba rakawanda.
- Kuramba Nzvimbo Dzakaoma: Inogara kwenguva refu mumamiriro ezvinhu akaoma, akadai sekupisa kwakanyanya uye nzvimbo dzine ngura.
- Kushandurwa Kwesimba Rinoshanda: Kushandiswa kweP-type doping kunoita kuti simba rishande zvakanaka, zvichiita kuti wafer ive yakakodzera masisitimu ekushandura simba.
- Kutungamira Kwakatsetseka Kwepakutanga: Inovimbisa kurongeka kwakanyatsojeka panguva yekugadzira, ichivandudza kururama kwemudziyo uye kugara kwenguva refu.
- Maumbirwo matete (350 μm): Ukobvu hwakanyanya hwewafer hunotsigira kubatanidzwa kwemidziyo yemagetsi yepamusoro, ine nzvimbo shoma.
Kazhinji, wafer yemhando yeP-type SiC, 4H/6H-P 3C-N, ine mabhenefiti akasiyana-siyana anoita kuti ive yakakodzera kushandiswa mumaindasitiri nemagetsi. Kupisa kwayo kwakanyanya uye voltage yekupwanyika kwayo zvinoita kuti ishande zvakanaka munzvimbo dzine tembiricha yepamusoro uye ine voltage yakawanda, nepo kuramba kwayo mumamiriro ezvinhu akaoma kuchivimbisa kugara kwenguva refu. Kushandiswa kweP-type doping kunobvumira kushandurwa kwesimba zvinobudirira, zvichiita kuti ive yakakodzera magetsi emagetsi uye masisitimu esimba. Pamusoro pezvo, kurongeka kwekutanga kwewafer kunovimbisa kurongeka kwakanyatsojeka panguva yekugadzira, zvichiwedzera kugadzikana kwekugadzirwa. Neukobvu hwe350 μm, yakakodzera kubatanidzwa mumidziyo yepamusoro, midiki.
Dhayagiramu Yakadzama
