SiC substrate P-type 4H/6H-P 3C-N 4inch withe ukobvu hwe350um Giredhi rekugadzira Giredhi reDummy
Tafura ye4inch SiC substrate P-type 4H/6H-P 3C-N parameter
4 dhayamita ye inchChikamu cheCarbide (SiC) Tsanangudzo
| Giredhi | Kugadzirwa kweMPD kusina Giredhi (Z) Giredhi) | Kugadzirwa Kwakajairika Giredhi (P) Giredhi) | Giredhi reDummy (D Giredhi) | ||
| Dhayamita | 99.5 mm~100.0 mm | ||||
| Ukobvu | 350 μm ± 25 μm | ||||
| Kudzidziswa kweWafer | Off axis: 2.0°-4.0° kuenda ku [11]20] ± 0.5° ye4H/6H-P, On axis:〈111〉± 0.5° ye3C-N | ||||
| Kuwanda kwepombi dze micropombi | 0 cm-2 | ||||
| Kuramba | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-rudzi 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Kutungamira Kwakatsetseka Kwepakutanga | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Hurefu Hwepamusoro-soro | 32.5 mm ± 2.0 mm | ||||
| Kureba Kwechipiri Kwakatsetseka | 18.0 mm ± 2.0 mm | ||||
| Kudzidziswa kwechipiri kwakadzikama | Silikoni yakatarisana mudenga: 90° CW. kubva kuPrime flat±5.0° | ||||
| Kusabatanidzwa kweMupendero | 3 mm | 6 mm | |||
| LTV/TTV/Uta /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Kuomarara | ChiPolish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Mipata yemucheto nechiedza chakasimba | Hapana | Kureba kwakaunganidzwa ≤ 10 mm, kureba kumwe chete ≤2 mm | |||
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤0.1% | |||
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Hapana | Nzvimbo yakaunganidzwa ≤3% | |||
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤0.05% | Nzvimbo yakaunganidzwa ≤3% | |||
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Hapana | Kureba kwakawedzerwa ≤1 × dhayamita yechinwiwa | |||
| Edge Chips High By Intensity Light | Hapana chinobvumidzwa ≥0.2mm upamhi uye kudzika | 5 inobvumirwa, ≤1 mm imwe neimwe | |||
| Kusvibiswa kweSilicon pamusoro Nesimba Rakanyanya | Hapana | ||||
| Kurongedza | Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete | ||||
Zvinyorwa:
※Miganho yekukanganisa inoshanda pamusoro pewafer yese kunze kwenzvimbo isina kuvharwa nemupendero. # Mavanga acho anofanira kuongororwa pachiso cheSi chete.
Substrate yeP-type 4H/6H-P 3C-N 4-inch SiC ine ukobvu hwe350 μm inoshandiswa zvakanyanya mukugadzira michina yemagetsi neyemagetsi yepamusoro. Iine conductivity yakanaka yekupisa, voltage yakanyanya kupwanyika, uye inodzivirira zvakanyanya kunzvimbo dzakanyanya, substrate iyi yakakodzera michina yemagetsi inoshanda zvakanyanya senge switch dzemagetsi ane simba guru, ma inverter, uye zvishandiso zveRF. Substrate dzemhando yekugadzira dzinoshandiswa mukugadzira zvinhu zvakakura, zvichiita kuti michina ishande nemazvo, izvo zvakakosha pakushandisa michina yemagetsi ine simba uye mashandisirwo efrequency yakawanda. Substrate dzemhando yedummy, kune rumwe rutivi, dzinonyanya kushandiswa pakugadzirisa maitiro, kuyedza michina, uye kugadzira prototype, zvichibatsira kuchengetedza kudzora mhando uye kuenderana kwemaitiro mukugadzirwa kwe semiconductor.
Zvakanakira zveN-type SiC composite substrates zvinosanganisira
- Kufambisa Kwekupisa Kwakanyanya: Kupisa zvakanaka kunoita kuti substrate ive yakanaka pakushandiswa kwekupisa kwakanyanya uye simba guru.
- Kuparara Kwemagetsi Kwakanyanya: Inotsigira mashandiro emagetsi ane simba guru, ichivimbisa kuvimbika kwemagetsi emagetsi nemidziyo yeRF.
- Kuramba Nzvimbo Dzakaoma: Inogara kwenguva refu mumamiriro ezvinhu akaoma akadai sekupisa kwakanyanya uye nharaunda dzine ngura, zvichiita kuti ishande kwenguva refu.
- Kunyatsojeka Kwekugadzira-Giredhi: Inovimbisa kushanda kwepamusoro-soro uye kwakavimbika mukugadzira zvinhu zvikuru, yakakodzera kushandiswa kwemagetsi epamusoro uye maRF.
- Giredhi Rekunyepedzera reKuedzwa: Inogonesa kuyera maitiro nemazvo, kuyedzwa kwemidziyo, uye kutevedzera ma prototyping pasina kukanganisa ma wafer emhando yepamusoro yekugadzira.
Kazhinji, substrate yeP-type 4H/6H-P 3C-N 4-inch SiC ine ukobvu hwe350 μm inopa mabhenefiti akakosha ekushandisa magetsi ane simba repamusoro. Kufambisa kwayo kupisa kwakanyanya uye voltage yekupwanyika kunoita kuti ive yakakodzera munzvimbo dzine simba repamusoro uye tembiricha yepamusoro, nepo kuramba kwayo mumamiriro ezvinhu akaoma kuchivimbisa kugara kwenguva refu uye kuvimbika. Substrate yemhando yekugadzira inoita kuti ishande nemazvo uye nguva dzose mukugadzirwa kukuru kwemagetsi emagetsi nemidziyo yeRF. Panguva iyi, substrate yemhando yedummy yakakosha pakugadzirisa maitiro, kuyedzwa kwemidziyo, uye prototyping, ichitsigira kudzora mhando uye kugara kwenguva refu mukugadzirwa kwesemiconductor. Aya maficha anoita kuti SiC substrates ive nehunyanzvi hwakanyanya kune mashandisirwo epamusoro.
Dhayagiramu Yakadzama
