SiC substrate P-mhando 4H/6H-P 3C-N 4inch ine ukobvu hwe350um Kugadzira giredhi Dummy giredhi

Tsanangudzo Pfupi:

Iyo P-mhando 4H/6H-P 3C-N 4-inch SiC substrate, ine ukobvu hwe350 μm, ndeyepamusoro-inoshanda semiconductor zvinhu zvinoshandiswa zvakanyanya mukugadzira zvigadzirwa zvemagetsi. Inozivikanwa nekusarudzika kwayo yekupisa conductivity, yakakwira breakdown voltage, uye kuramba kune tembiricha yakanyanyisa uye nharaunda dzinoora, iyi substrate yakanakira magetsi emagetsi maapplication. Iyo yekugadzira-giredhi substrate inoshandiswa muhukuru-hukuru hwekugadzira, kuve nechokwadi chakasimba chekutonga kwemhando uye kuvimbika kwepamusoro mumidziyo yemagetsi yepamusoro. Zvichakadaro, iyo dummy-giredhi substrate inonyanya kushandiswa kugadzirisa debugging, chiyero chemidziyo, uye prototyping. Iyo yepamusoro zvivakwa zveSiC inoita kuti ive sarudzo yakanakisa yezvishandiso zvinoshanda mukupisa-kupisa, high-voltage, uye yakakwirira-frequency nharaunda, kusanganisira magetsi emagetsi uye RF masisitimu.

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4inch SiC substrate P-mhando 4H/6H-P 3C-N parameter tafura

4 inch dhayamita SiliconCarbide (SiC) Substrate Tsanangudzo

Giredhi			Zero MPD Kugadzirwa Giredhi (Z Giredhi)	Standard Production Giredhi (P Giredhi)	Dummy Grade (D Giredhi)
Diameter			99.5 mm ~ 100.0 mm
Ukobvu			350 μm ± 25 μm
Wafer Orientation			Kunze kweakisi: 2.0 ° -4.0 ° kuenda [112(-)0] ± 0.5° nokuda kwe4H/6H-P, On axis:〈111〉± 0.5° nokuda kwe3C-N
Micropipe Density			0 masendimita-2
Resistivity	p-mhando 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mhando 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Yekutanga Flat Oriental		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Primary Flat Length			32.5 mm ± 2.0 mm
Secondary Flat Length			18.0 mm ± 2.0 mm
Secondary Flat Orientation			Silicon yakatarisana kumusoro: 90° CW. kubva kuPrime flat±5.0°
Kusabatanidzwa kumucheto			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kukasharara			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Chiedza			Hapana		Kureba kwekuwedzera ≤ 10 mm, kureba kamwe≤2 mm
Hex Plates By High Intensity Chiedza			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza			Hapana		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Yakawedzerwa nzvimbo ≤3%
Silicon Surface Scratches By High Intensity Chiedza			Hapana		Cumulative kureba≤1×wafer dhayamita
Edge Chips High By Intensity Chiedza			Hapana anotenderwa ≥0.2mm hupamhi nekudzika		5 inotenderwa, ≤1 mm imwe neimwe
Silicon Surface Kusvibiswa NeKunyanya Kusimba			Hapana
Packaging			Multi-wafer Cassette kana Single Wafer Container

Notes:

※ Miganho yekukanganisa inoshanda kune yese wafer pamusoro kunze kweiyo yekumucheto nzvimbo yekusarudzika. # Iwo mavanga anofanirwa kutariswa paSi face chete.

Iyo P-mhando 4H/6H-P 3C-N 4-inch SiC substrate ine ukobvu hwe350 μm inoshandiswa zvakanyanya mukugadzirwa kwemagetsi uye magetsi emagetsi. Iine yakanakisa yekupisa conductivity, yakakwira breakdown voltage, uye kuramba kwakasimba kune yakanyanyisa nharaunda, iyi substrate yakanakira yepamusoro-inoshanda magetsi emagetsi akadai seakakwira-voltage switch, inverters, uye RF zvishandiso. Kugadzira-giredhi substrates anoshandiswa mukugadzira hukuru-hukuru, kuve nechokwadi chekuvimbika, chepamusoro-chaiyo dhizaini mashandiro, ayo akakosha kune magetsi emagetsi uye yakakwirira-frequency application. Dummy-giredhi ma substrates, kune rumwe rutivi, anonyanya kushandiswa kugadzirisa maitiro, kuyedza michina, uye prototype kusimudzira, kubatsira kuchengetedza kudzora kwemhando uye kuenderana kwekuita mukugadzirwa kwesemiconductor.

TsanangudzoZvakanakira zveN-mhando SiC inoumbwa substrates inosanganisira

High Thermal Conductivity: Kushanda kwekupisa kupisa kunoita kuti substrate ive yakanaka kune yakakwirira-tembiricha uye yakakwirira-simba maapplication.
High Breakdown Voltage: Inotsigira kushanda kwepamusoro-voltage, kuve nechokwadi chekuvimbika mumagetsi emagetsi uye RF zvishandiso.
Kupokana Nenzvimbo Dzakaoma: Yakasimba mumamiriro ezvinhu akanyanyisa akadai sekushisa kwepamusoro uye nzvimbo dzinoparadza, kuve nechokwadi chekushanda kwenguva refu.
Kugadzira-Giredhi Precision: Inova nechokwadi chepamusoro-mhando uye yakavimbika kuita mukugadzira-hombe, yakakodzera simba repamusoro uye RF zvikumbiro.
Dummy-Giredhi rekuedzwa: Inogonesa kurongeka kwemaitiro, kuyedzwa kwemidziyo, uye prototyping pasina kukanganisa kugadzira-giredhi wafers.

Pakazere, iyo P-mhando 4H/6H-P 3C-N 4-inch SiC substrate ine ukobvu hwe350 μm inopa mabhenefiti akakosha ekushandisa kwemagetsi kwepamusoro. Yayo yakanyanya kupisa conductivity uye kuparara kwemagetsi inoita kuti ive yakanaka kune yakakwirira-simba uye yakakwirira-tembiricha nharaunda, nepo kuramba kwayo kune yakaoma mamiriro kunovimbisa kusimba uye kuvimbika. Iyo yekugadzira-giredhi substrate inovimbisa kuita kwayo uye kunoenderana mukugadzirwa kwakakura kwemagetsi emagetsi uye RF zvishandiso. Zvichakadaro, iyo dummy-giredhi substrate yakakosha pakuita calibration, kuyedza michina, uye prototyping, inotsigira kudzora kwemhando uye kuenderana mukugadzirwa kwesemiconductor. Aya maficha anoita kuti SiC substrates ishande zvakanyanya kune epamberi maapplication.