SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High kuchena Semi-Insulating) 4H/6H-P 3C -n mhando 2 3 4 6 8inch iripo

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High kuchena Semi-Insulating) 4H/6H-P 3C -n mhando 2 3 4 6 8inch inowanikwa Featured Image

Tsanangudzo Pfupi:

Isu tinopa yakasarudzika sarudzo yemhando yepamusoro SiC (Silicon Carbide) mawaferi, ane tarisiro paN-mhando 4H-N uye 6H-N mawaferi, ayo akanakira maapplication ari epamberi optoelectronics, zvishandiso zvemagetsi, uye yakakwirira-tembiricha nharaunda. . Aya ma-N-wafers anozivikanwa nekusarudzika kwekupisa kwekupisa, kugadzikana kwemagetsi, uye kusimba kunoshamisa, zvichiita kuti ive yakakwana kune yakakwirira-kuita maapplications akadai semagetsi emagetsi, magetsi emotokari madhiraivha masisitimu, inodzoreredzwa magetsi inverters, uye maindasitiri emagetsi emagetsi. Pamusoro pezvipo zvedu zveN-mhando, isu tinopawo P-mhando 4H/6H-P uye 3C SiC mawafer ezvido zvehunyanzvi, zvinosanganisira yakakwirira-frequency uye RF zvishandiso, pamwe nephotonic application. Mawafer edu anowanikwa muhukuru kubva pa 2 inches kusvika 8 inches, uye isu tinopa mhinduro dzakagadzirirwa kuzadzisa izvo zvinodiwa zveakasiyana maindasitiri zvikamu. Kuti uwane rumwe ruzivo kana kubvunza, ndapota inzwa wakasununguka kutibata.

Tumira email kwatiri

Product Detail

Product Tags

Properties

4H-N uye 6H-N (N-mhando SiC Wafers)

Application:Inonyanya kushandiswa mumagetsi emagetsi, optoelectronics, uye yakakwirira-tembiricha maapplication.

Diameter Range:50.8 mm kusvika 200 mm.

Ukobvu:350 μm ± 25 μm, pamwe nesarudzo ukobvu hwe500 μm ± 25 μm.

Resistivity:N-mhando 4H/6H-P: ≤ 0.1 Ω·cm (Z-giredhi), ≤ 0.3 Ω·cm (P-giredhi); N-mhando 3C-N: ≤ 0.8 mΩ·cm (Z-giredhi), ≤ 1 mΩ·cm (P-giredhi).

Hushasha:Ra ≤ 0.2 nm (CMP kana MP).

Micropipe Density (MPD):<1 ea/cm².

TTV: ≤ 10 μm yemadhayamita ese.

Warp: ≤ 30 μm (≤ 45 μm ye8-inch wafers).

Kusabatanidzwa kweEdge:3 mm kusvika 6 mm zvichienderana nerudzi rwewafer.

Kurongedza:Multi-wafer cassette kana single wafer container.

Ohter iripo saizi 3inch 4inch 6inch 8inch

HPSI (High Purity Semi-Insulating SiC Wafers)

Application:Inoshandiswa kumidziyo inoda kupikisa kwakanyanya uye kuita kwakagadzikana, senge RF zvishandiso, photonic application, uye masensa.

Diameter Range:50.8 mm kusvika 200 mm.

Ukobvu:Ukobvu hwakajairwa hwe350 μm ± 25 μm nesarudzo dzemawafer akakora anosvika 500 μm.

Hushasha:Ra ≤ 0.2 nm.

Micropipe Density (MPD): ≤ 1 ea/cm².

Resistivity:Kupikisa kwakanyanya, kunowanzo shandiswa mumasemi-insulating application.

Warp: ≤ 30 μm (yehukuru hudiki), ≤ 45 μm yemadhayamita makuru.

TTV: ≤ 10 μm.

Ohter iripo saizi 3inch 4inch 6inch 8inch

4H-P,6H-P&3C SiC wafer(P-mhando SiC Wafers)

Application:Kunyanya kune simba uye yakakwirira-frequency zvishandiso.

Diameter Range:50.8 mm kusvika 200 mm.

Ukobvu:350 μm ± 25 μm kana zvakasarudzika sarudzo.

Resistivity:P-mhando 4H/6H-P: ≤ 0.1 Ω·cm (Z-giredhi), ≤ 0.3 Ω·cm (P-giredhi).

Hushasha:Ra ≤ 0.2 nm (CMP kana MP).

Micropipe Density (MPD):<1 ea/cm².

TTV: ≤ 10 μm.

Kusabatanidzwa kweEdge:3 kusvika 6mm.

Warp: ≤ 30 μm yehukuru hudiki, ≤ 45 μm yehukuru hukuru.

Ohter iripo saizi 3inch 4inch 6inch5×5 10×10

Partial Data Parameters Tafura

Property	2 inch		3inch		4inch	6inch	8inch
Type	4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI/4H-SEMI
Diameter	50.8 ± 0.3 mm		76.2±0.3mm		100±0.3mm	150±0.3mm	200 ± 0.3 mm
Ukobvu	330 ± 25 um		350 ±25 um		350 ±25 um	350 ±25 um	350 ±25 um
	350±25um;		500±25um		500±25um	500±25um	500±25um
	kana customized		kana customized		kana customized	kana customized	kana customized
Kukasharara	Ra ≤ 0.2nm		Ra ≤ 0.2nm		Ra ≤ 0.2nm	Ra ≤ 0.2nm	Ra ≤ 0.2nm
Warp	≤ 30um		≤ 30um		≤ 30um	≤ 30um	≤45um
TTV	≤ 10um		≤ 10um		≤ 10um	≤ 10um	≤ 10um
Kukwenya/Dig	CMP/MP
MPD	<1ea/cm-2	<1ea/cm-2		<1ea/cm-2		<1ea/cm-2		<1ea/cm-2
Shape	Round, Flat 16mm; OF kureba 22mm; YEUrefu 30/32.5mm; YEUrefu 47.5mm; NOTCH; NOTCH;
Bevel	45°, SEMI Spec; C Chimiro
Giredhi	Giredhi rekugadzira reMOS&SBD; Research giredhi; Dummy giredhi,Mbeu wafer Giredhi
Mashoko	Dhayamita, Ukobvu, Maonero, mataurirwo ari pamusoro anogona kugadzirwa pachikumbiro chako

Applications

·Power Electronics

N mhando yeSiC wafers yakakosha mumagetsi emagetsi emagetsi nekuda kwekugona kubata yakakwira voltage uye yakakwira ikozvino. Iwo anowanzo shandiswa mumagetsi ekushandura, inverters, uye mota madhiraivha kumaindasitiri senge renewable simba, mota dzemagetsi, uye maindasitiri otomatiki.

· Optoelectronics
N mhando yeSiC zvinhu, kunyanya zve optoelectronic application, zvinoshandiswa mumidziyo yakaita semwenje-emitting diodes (LEDs) uye laser diode. Yavo yakakwirira yekupisa yekupisa uye yakakura bandgap inoita kuti ive yakanaka kune yakakwirira-inoshanda optoelectronic zvishandiso.

·High-Temperature Applications
4H-N 6H-N SiC mawaferi akanyatsokodzera nharaunda dzine tembiricha yepamusoro, senge mumasensa uye magetsi emagetsi anoshandiswa mumhepo, mota, uye maindasitiri ekushandisa uko kupisa nekudzikama pakupisa kwakanyanya kwakakosha.

·RF Zvishandiso
4H-N 6H-N SiC mawaferi anoshandiswa muredhiyo frequency (RF) zvishandiso zvinoshanda munzvimbo dzakakwirira-frequency. Izvo zvinoshandiswa mumasisitimu ekutaurirana, tekinoroji yeradar, uye kutaurirana kwesetiraiti, uko kune simba repamusoro uye kushanda kunodiwa.

·Photonic Applications
Mune photonics, SiC wafers anoshandiswa kune zvishandiso senge photodetectors uye modulators. Izvo zvinhu zvakasarudzika zvivakwa zvinobvumira kuti ishande mukugadzira chiedza, modulation, uye kuona mune optical kutaurirana masisitimu uye ekufungidzira zvishandiso.

·Sensors
SiC wafers anoshandiswa mumhando dzakasiyana dze sensor application, kunyanya munzvimbo dzakaoma uko zvimwe zvinhu zvinogona kutadza. Izvi zvinosanganisira tembiricha, kudzvanywa, uye makemikari sensors, ayo akakosha muminda senge mota, oiri & gasi, uye kuongorora kwezvakatipoteredza.

·Magetsi Vehicle Drive Systems
SiC tekinoroji inoita basa rakakosha mumotokari dzemagetsi nekuvandudza mashandiro uye kuita kwemadhiraivha masisitimu. NeSiC simba semiconductors, mota dzemagetsi dzinogona kuwana hupenyu hwebhatiri huri nani, kukurumidza kuchaja nguva, uye kuwedzera simba kwesimba.

·Yepamberi Sensors uye Photonic Vashanduri
Mune advanced sensor tekinoroji, maSiC wafers anoshandiswa kugadzira yakakwirira-chaiyo sensors yekushandiswa mumarobhoti, zvishandiso zvekurapa, uye kutarisa kwezvakatipoteredza. Mumafotonic converters, zvivakwa zveSiC zvinoshandiswa kugonesa kushandurwa kwakanaka kwesimba remagetsi kune masaini masaini, ayo akakosha munharembozha uye nekumhanya-mhanya kweinternet.

Q&A

Q: Chii chinonzi 4H mu4H SiC?
A: "4H" mu4H SiC inoreva chimiro chekristaro chesilicon carbide, kunyanya fomu ine hexagonal ine mana akaturikidzana (H). Iyo "H" inoratidza mhando yehexagonal polytype, ichisiyanisa kubva kune mamwe maSiC polytypes se6H kana 3C.

Q: Chii chinonzi thermal conductivity ye4H-SiC?
A:The thermal conductivity ye4H-SiC (Silicon Carbide) inenge 490-500 W/m·K pakupisa kwekamuri. Iyi yakakwira yekupisa yekupisa inoita kuti ive yakanaka kune maapplication mumagetsi emagetsi uye nepamusoro-tembiricha nharaunda, uko kwakakosha kupisa kupisa kwakakosha.

Zvakapfuura: Sapphire chubhu chaiyo kugadzira yakajeka chubhu Al2O3 kirasi inopfeka-inodzivirira yakakwirira kuoma EFG/KY akasiyana dhayamita kupukuta tsika

Zvinotevera:

Nyora meseji yako pano uye titumire kwatiri