LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Hukobvu 250-500um

Tsanangudzo Pfupi

LiTaO₃ mawaferi anomiririra yakakosha piezoelectric uye ferroelectric zvinhu sisitimu, inoratidzira yakasarudzika piezoelectric coefficients, thermal kugadzikana, uye optical zvivakwa, zvichiita kuti zvive zvakakosha kune epamusoro acoustic wave (SAW) mafirita, bulk acoustic wave (BAW) resonators, optical modulators, uye infrared detectors. XKH inyanzvi mumhando yepamusoro LiTaO₃ wafer R&D uye kugadzira, ichishandisa advanced Czochralski (CZ) kukura kwekristaro uye yemvura chikamu epitaxy (LPE) maitiro ekuona yepamusoro crystalline homogeneity ine hurema densities <100/cm².

XKH inopa 3-inch, 4-inch, uye 6-inch LiTaO₃ mawafer ane akawanda crystallographic orientations (X-cut, Y-cut, Z-cut), inotsigira customized doping (Mg, Zn) uye poling marapirwo kuti asangane nezvinodiwa zvekushandisa. The material's dielectric constant (ε~40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), uye tembiricha yeCurie (~ 600°C) inogadza LiTaO₃ seyakasarudzika substrate yemafirita akakwira-frequency uye ma sensors chaiwo.

Yedu yakanyatso kusanganiswa yekugadzira inovhara kukura kwekristaro, kupeta, kupukuta, uye kutetepa-firimu deposition, ine mwedzi nemwedzi yekugadzira inodarika zviuru zvitatu zvewafer kushandira 5G kutaurirana, zvemagetsi zvevatengi, mafotonics, uye maindasitiri ekudzivirira. Isu tinopa yakazara tekinoroji kubvunza, sampuli maitiro, uye yakaderera-vhoriyamu prototyping masevhisi kuendesa yakagadziridzwa LiTaO₃ mhinduro.

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Features

Technical parameters

Zita	Optical-giredhi LiTaO3	Inzwi tafura level LiTaO3
Axial	Z cheka + / - 0.2 °	36 ° Y kucheka / 42 ° Y kucheka / X kucheka(+ / - 0.2 °)
Diameter	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Datum ndege	22mm +/ - 2mm	22mm +/-2mm32mm +/-2mm
Ukobvu	500um +/-5mm1000um +/-5mm	500um +/-20mm350um +/-20mm
TTV	≤ 10um	≤ 10um
Curie tembiricha	605 °C + / - 0.7 °C (DTA nzira)	605 °C + / -3 °C (DTAmethod
Surface quality	Kukwenenzvera kwemativi maviri	Kukwenenzvera kwemativi maviri
Chamfered edges	kumucheto kutenderera	kumucheto kutenderera

Hunhu Hunokosha

1. Crystal Mamiriro uye Magetsi Kuita

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (eg, 6H / 15R), ine XRD rocking curve yakazara-hupamhi pahafu-maximum (FWHM) ≤32.7 arcsec.
· High Carrier Mobility: Electron mobility ye5,400 cm²/V·s (4H-SiC) uye kufamba kwegomba kwe380 cm²/V·s, zvichiita kuti dhizaini yedhizaini yakakwira-frequency.
·Radiation Hardness: Inomira 1 MeV neutron irradiation ine displacement kukuvara kwechikumbaridzo che 1×10¹⁵ n/cm², yakanakira aerospace uye kushandisa kwenyukireya.

2.Thermal uye Mechanical Properties

· Exceptional Thermal Conductivity: 4.9 W/cm·K (4H-SiC), katatu iyo yesilicon, inotsigira kushanda pamusoro pe200 ° C.
· Low Thermal Expansion Coefficient: CTE ye 4.0 × 10⁻⁶/K (25–1000 ° C), kuve nechokwadi chekuenderana nesilicon-based packaging uye kuderedza kushushikana kwekushisa.

3.Defect Control uye Processing Precision
.
· Micropipe Density: <0.3 cm⁻² (8-inch wafers), dislocation density <1,000 cm⁻² (yakasimbiswa kuburikidza neKOH etching).
· Unhu Hwepamusoro: CMP-yakakwenenzverwa kuRa <0.2 nm, inosangana neEUV lithography-giredhi flatness zvinodiwa.

Key Applications

Domain	Application Scenarios	Technical Advantages
Optical Communications	100G/400G lasers, silicon photonics hybrid modules	InP yembeu substrates inogonesa bandgap yakananga (1.34 eV) uye Si-based heteroepitaxy, kuderedza kurasikirwa kwekubatanidza kwemaziso.
New Energy Vehicles	800V high-voltage inverters, onboard charger (OBC)	4H-SiC substrates inomira> 1,200 V, kuderedza conduction kurasikirwa ne50% uye system volume ne40%.
5G Communications	Millimeter-wave RF zvishandiso (PA/LNA), base chiteshi magetsi amplifiers	Semi-insulating SiC substrates (resistivity >10⁵ Ω·cm) inogonesa high-frequency (60 GHz+) passive integration.
Industrial Equipment	High-temperature sensors, ikozvino transformers, nuclear reactor monitors	InSb mhodzi substrates (0.17 eV bandgap) inopa magineti kunzwa kusvika pa300%@10 T.

LiTaO₃ Wafers - Makiyi Hunhu

1. Superior Piezoelectric Performance

· High piezoelectric coefficients (d₃₃~8-10 pC/N, K²~0.5%) inogonesa ma-high-frequency SAW/BAW zvishandiso zvine kurasikirwa kwekuisa <1.5dB ye5G RF mafirita.

Yakanakisa electromechanical coupling inotsigira yakafara-bandwidth (≥5%) mafirita madhizaini e sub-6GHz uye mmWave application.

2. Optical Properties

Broadband pachena (> 70% kutapurirana kubva 400-5000nm) ye electro-optic modulators kuwana> 40GHz bandwidth

· Yakasimba isina mutsara yekuona susceptibility (χ⁽²⁾~30pm/V) inogonesa inoshanda yechipiri harmonic chizvarwa (SHG) mumalaser masisitimu.

3. Kugadzikana Kwezvakatipoteredza

· High Curie tembiricha (600 ° C) inochengetedza piezoelectric mhinduro mumotokari-giredhi (-40 ° C kusvika 150 ° C) nharaunda.

Kemikari inertness inopesana nemaasidhi / alkali (pH1-13) inovimbisa kuvimbika mumaindasitiri sensor application.

4. Customization Mano

Oientation engineering: X-cheka (51°), Y-cheka (0°), Z-chekwa (36°) yemhinduro dzakagadzirirwa piezoelectric

· Doping sarudzo: Mg-doped (optical damage resistance), Zn-doped (yakakwidziridzwa d₃₃)

Kupera kwepamusoro: Epitaxial-yakagadzirira kukwenenzverwa (Ra<0.5nm), ITO/Au metallization

LiTaO₃ Wafers - Yekutanga Zvikumbiro

1. RF Front-End Modules

· 5G NR SAW mafirita (Band n77/n79) ane tembiricha coefficient of frequency (TCF) <|-15ppm/°C|

* Ultra-wideband BAW resonators yeWiFi 6E/7 (5.925-7.125GHz)

2. Integrated Photonics

· High-speed Mach-Zehnder modulators (> 100Gbps) yekubatana kwemaziso kutaurirana.

QWIP infrared detectors ine cutoff wavelengths tunable kubva 3-14μm

3. Zvigadzirwa zveMotokari

* Ultrasonic yekupaka sensors ine> 200kHz inoshanda frequency

· TPMS piezoelectric transducers arikupona -40°C kusvika 125°C thermal cycling

4. Defense Systems

EW inogamuchira mafirita ane> 60dB kunze-kwe-bhendi kurambwa

· Missile anotsvaga IR mahwindo anotumira 3-5μm MWIR mwaranzi

5. Emerging Technologies

· Optomechanical quantum transducers ye microwave-to-optical conversion

PMUT arrays ekurapa ultrasound imaging (> 20MHz resolution)

LiTaO₃ Wafers - XKH Services

1. Supply Chain Management

· Boule-to-wafer processing ine 4-vhiki yekutungamira nguva yezvakajairwa zvakatemwa

· Mutengo-wakagadziridzwa kugadzirwa kunoburitsa 10-15% mutengo mukana uchipesana nevakwikwidzi

2. Tsika Solutions

· Oriental-specific wafering: 36 ° ± 0.5 ° Y-chekwa kuitira kunyatsoita SAW

· Doped nziyo: MgO (5mol%) doping ye optical application

Metallization services: Cr/Au (100/1000Å) electrode patterning

3. Technical Support

· Material characterization: XRD rocking curves (FWHM <0.01 °), AFM pamusoro pekuongorora

* Chishandiso simulation: FEM modhi yeSAW sefa dhizaini dhizaini

Mhedziso

LiTaO₃ mawafer anoenderera mberi nekugonesa kufambira mberi kwetekinoroji mukati meRF kutaurirana, akasanganiswa mafotonics, uye hutsinye-yemamiriro ekunze sensors. Hunyanzvi hwezvinhu zveXKH, kunyatsogadzira, uye tsigiro yeinjiniya yekushandisa inobatsira vatengi kukunda matambudziko ekugadzira mune inotevera-chizvarwa chemagetsi masisitimu.