6inch GaN-On-Sapphire
150mm 6inch GaN paSilicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer
Iyo 6-inch sapphire substrate wafer ndeyepamusoro-mhando semiconductor zvinhu zvinoumbwa nezvikamu zvegallium nitride (GaN) zvakarimwa pasafire substrate.Izvo zvinhu zvine zvakanakisa zvekufambisa zvemagetsi zvivakwa uye zvakanakira kugadzira yakakwirira-simba uye yakakwirira-frequency semiconductor zvishandiso.
Nzira yekugadzira: Maitiro ekugadzira anosanganisira kukura magadziko eGaN pasapphire substrate uchishandisa matekiniki epamusoro akadai sesimbi-organic chemical vapor deposition (MOCVD) kana molecular beam epitaxy (MBE).Iyo deposition process inoitwa pasi pemamiriro akadzorwa kuti ave nechokwadi chepamusoro chekristaro mhando uye yunifomu firimu.
6inch GaN-On-Sapphire application: 6-inch sapphire substrate machipisi anoshandiswa zvakanyanya mumicrowave kutaurirana, radar masisitimu, isina waya tekinoroji uye optoelectronics.
Mamwe maapplication akajairika anosanganisira
1. Rf simba amplifier
2. LED chiedza indasitiri
3. Wireless network yekukurukurirana michina
4. Zvigadzirwa zvemagetsi munzvimbo yakakwirira yekupisa
5. Optoelectronic midziyo
Product specifications
- Saizi: Iyo substrate dhayamita i6 inches (anenge 150 mm).
-Surface quality: Iyo yepamusoro yakakwenenzverwa kuti ipe yakanakisa girazi mhando.
- Ukobvu: Ukobvu hweGaN layer hunogona kugadzirwa zvinoenderana nezvinodiwa chaizvo.
- Packaging: Iyo substrate yakanyatso kurongedzerwa ne-anti-static zvinhu kudzivirira kukuvara panguva yekufambisa.
- Positioning edges: Iyo substrate ine chaiyo yekumisikidza mipendero inogonesa kurongeka uye kushanda panguva yekugadzirira mudziyo.
- Mamwe ma paramita: Yakanangana paramita senge hutete, resistivity uye doping concentration inogona kugadziriswa zvinoenderana nezvinodiwa nevatengi.
Nezvavo zvemhando yepamusoro zvivakwa uye akasiyana mashandisirwo, 6-inch sapphire substrate wafers isarudzo yakavimbika yekuvandudza kwepamusoro-inoshanda semiconductor zvishandiso mumaindasitiri akasiyana.
| Substrate | 6" 1mm <111> p-mhando Si | 6" 1mm <111> p-mhando Si |
| Epi ThickAvg | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Bow | +/-45um | +/-45um |
| Kutsemuka | <5mm | <5mm |
| Vertical BV | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT ThickAvg | 20-30nm | 20-30nm |
| Insitu SiN Cap | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Mobility | ~ 2000cm2/Vs (<2%) | ~ 2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
Detailed Diagram
