LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6inch Orientaiton Y-42°/36°/108° Ukobvu 250-500um

Tsananguro pfupi:

Mawafer eLiTaO₃ anomiririra sisitimu yakakosha yezvinhu zvepiezoelectric neferroelectric, achiratidza ma piezoelectric coefficients anoshamisa, kugadzikana kwekupisa, uye hunhu hwe optical, zvichiita kuti zvive zvakakosha kuma filters e surface acoustic wave (SAW), bulk acoustic wave (BAW), optical modulators, uye infrared detectors. XKH inonyanya kugadzira R&D yeLiTaO₃ wafer yepamusoro, ichishandisa maitiro eCzochralski (CZ) crystal growth uye liquid phase epitaxy (LPE) kuti ive nechokwadi chekuti crystalline homogeneity yepamusoro ine defect densities <100/cm².

XKH inopa mawafer eLiTaO₃ ane 3-inch, 4-inch, uye 6-inch ane magadzirirwo akasiyana-siyana ekristallographic (X-cut, Y-cut, Z-cut), anotsigira madoping akagadzirwa (Mg, Zn) uye poling treatments kuti asvike pazvinodiwa zvekushandisa. Dielectric constant yechinhu ichi (ε~40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), uye tembiricha yeCurie (~600°C) zvinosimbisa LiTaO₃ senzvimbo inofarirwa yemafirita ane frequency yakakwira uye ma sensor ekugadzirisa.

Kugadzira kwedu kwakabatana kunosanganisira kukura kwekristaro, kupukuta, kupukuta, uye kuisa thin-film, nehukuru hwekugadzira hunopfuura 3,000 wafers pamwedzi yekushandira 5G communications, consumer electronics, photonics, uye defense industries. Isu tinopa mazano akazara ehunyanzvi, sample characterization, uye prototyping services shoma kuti tipe mhinduro dzakagadzirwa dzeLiTaO₃.

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Zvinhu zvirimo

Magadzirirwo ehunyanzvi

Zita	LiTaO3 yemhando yepamusoro	Tafura yeruzha LiTaO3
Axial	Z yakachekwa + / - 0.2 °	36 ° Y yakachekwa / 42 ° Y yakachekwa / X yakachekwa(+ / - 0.2 °)
Dhayamita	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Ndege yeDatum	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Ukobvu	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Tembiricha yeCurie	605 °C + / - 0.7 °C (DTAnzira)	605 °C + / -3 °C (DTAnzira
Hunhu hwepamusoro	Kupukuta kwemativi maviri	Kupukuta kwemativi maviri
Micheto ine chamfered	kutenderera kwemucheto	kutenderera kwemucheto

Hunhu Hunokosha

1. Crystal Structure uye Magetsi Performance

· Kugadzikana kweCrystallographic: 100% 4H-SiC polytype dominance, hapana multicrystalline inclusions (semuenzaniso, 6H/15R), ine XRD rocking curve yakazara pahafu yepamusoro (FWHM) ≤32.7 arcsec.
· Kufamba Kwepamusoro: Kufamba kwemaerekitironi e5,400 cm²/V·s (4H-SiC) uye kufamba kwemaburi e380 cm²/V·s, zvichigonesa dhizaini yemidziyo ine mafrequency akakwira.
·Kuomarara kweRadiation: Inodzivirira 1 MeV neutron irradiation ine muganhu wekukanganisika kwe1×10¹⁵ n/cm², yakakodzera kushandiswa mundege nenyukireya.

2. Zvivakwa zveThermal neMechanical

· Kufambisa Kunopisa Kunoshamisa: 4.9 W/cm·K (4H-SiC), katatu kupfuura silicon, inotsigira kushanda pamusoro pe200°C.
· Kuwedzerwa kweThermal Low: CTE ye4.0×10⁻⁶/K (25–1000°C), zvichiita kuti pave nekuenderana ne silicon-based packaging uye kuderedza kushushikana kwethermal.

3. Kudzora Kwakakwana uye Kugadzirisa Kwakarurama
.
· Kuwanda kweMicropipe: <0.3 cm⁻² (mawafers e-inch 8), kusimba kwedislocation <1,000 cm⁻² (zvakasimbiswa kuburikidza neKOH etching).
· Hunhu Hwepamusoro: CMP-yakapetwa kusvika Ra <0.2 nm, ichizadzisa zvinodiwa zveEUV lithography-grade flatness.

Zvishandiso Zvikuru

Domain	Maitiro Ekushandisa	Zvakanakira Zvehunyanzvi
Kutaurirana kweOptical	100G/400G lasers, silicon photonics hybrid modules	Zvigadziko zvembeu zveInP zvinogonesa direct bandgap (1.34 eV) uye Si-based heteroepitaxy, zvichideredza kurasikirwa kwe optical coupling.
Mota Itsva dzeSimba	Ma inverter emagetsi ane 800V, machaja ari mubhodhi (OBC)	Zvishandiso zve4H-SiC zvinotsungirira >1,200 V, zvichideredza kurasikirwa kwemhepo ne50% uye vhoriyamu yesystem ne40%.
Kutaurirana kwe5G	Midziyo yeRF yemafungu emagetsi eMillimeter-wave (PA/LNA), maamplifiers emagetsi ebase station	Zvishandiso zveSiC zvinodzivirira kupisa zvishoma (resistivity >10⁵ Ω·cm) zvinogonesa kubatanidzwa kwe "high-frequency" (60 GHz+).
Midziyo yeIndasitiri	Masensa ekupisa kwakanyanya, matransformer emagetsi, mamonita enyukireya	Zvishandiso zveInSb seed substrates (0.17 eV bandgap) zvinopa simba remagineti rinosvika 300% @ 10 T.

MaWafer eLiTaO₃ - Hunhu Hukuru

1. Kushanda Kwepamusoro KwemaPiezoelectric

· Ma piezoelectric coefficients akakwira (d₃₃~8-10 pC/N, K²~0.5%) anogonesa michina yeSAW/BAW ine frequency yakakwira ine kurasikirwa kwekuisa <1.5dB kwemafirita e5G RF

· Kubatana kwakanaka kwazvo kwemagetsi kunotsigira magadzirirwo efirita ebandwidth yakafara (≥5%) ezvishandiso zve sub-6GHz ne mmWave

2. Zvimiro zveOptical

· Kujeka kweBroadband (>70% transmission kubva ku400-5000nm) kune electro-optic modulators inosvika ku>40GHz bandwidth

· Kukwanisa kushanda zvakanaka kwemaziso kusingatsvedzereki (χ⁽²⁾~30pm/V) kunoita kuti pave nekukwanisa kugadzira second harmonic (SHG) zvakanaka muma laser systems

3. Kugadzikana Kwezvakatipoteredza

· Tembiricha yepamusoro yeCurie (600°C) inochengetedza mhinduro yepiezoelectric munzvimbo dzemotokari (-40°C kusvika 150°C)

· Kusashanda kwemakemikari anopesana neacids/alkalies (pH1-13) kunoita kuti zvive nyore kushandisa sensor yemaindasitiri.

4. Kugona Kwekugadzirisa

· Uinjiniya hwekutungamira: X-cut (51°), Y-cut (0°), Z-cut (36°) yemhinduro dzepiezoelectric dzakagadzirwa

· Sarudzo dzekushandisa mushonga weMg-doped (kudzivisa kukuvara kwemaziso), Zn-doped (yakawedzerwa d₃₃)

· Kupedzwa kwepamusoro: Kuporishwa kweEpitaxial-ready (Ra<0.5nm), ITO/Au metallization

MaWafer eLiTaO₃ - Mashandisirwo Akakosha

1. Mamodule eRF Front-End

· Mafirita e5G NR SAW (Band n77/n79) ane frequency yekupisa (TCF) <|-15ppm/°C|

· Ma resonator eBAW ane wideband yakawanda kwazvo eWiFi 6E/7 (5.925-7.125GHz)

2. Mifananidzo Yakabatanidzwa

· Mach-Zehnder modulators dzinomhanya zvakanyanya (>100Gbps) dzekutaurirana kwakabatana kwemaziso

· Zviyereso zveQWIP infrared zvine marefu enguva anogona kugadziriswa kubva pa3-14μm

3. Zvigadzirwa zvemagetsi zveMotokari

· Masensa ekupaka eUltrasonic ane frequency yekushanda >200kHz

· Matransducer eTPMS piezoelectric ari kurarama kupisa kwe -40°C kusvika 125°C

4. Masisitimu ekudzivirira

· Mafirita eEW receiver ane >60dB out-of-band relamp

· Mahwindo eIR anotsvaga zvombo anotumira mwaranzi ye3-5μm MWIR

5. Matekinoroji Ari Kubudirira

· Ma transducer e optomechanical quantum ekushandura kubva ku microwave kuenda ku optical

· PMUT arrays yekurapa ultrasound imaging (>20MHz resolution)

MaWafers eLiTaO₃ - Masevhisi eXKH

1. Kutarisirwa kweKutengeswa kweZvigadzirwa

· Kugadziriswa kweboule-to-wafer nemavhiki mana ekutarisira zvinodiwa zvakajairwa

· Kugadzirwa kwakagadziridzwa nemutengo unopa mukana we10-15% wemutengo uchienzaniswa nevanokwikwidza

2. Mhinduro Dzakagadzirwa Nemunhu

· Kuchekerera kwakanangana nekutarisa: 36°±0.5° Y-cut kuti SAW ishande zvakanaka

· Mishonga yakasanganiswa: MgO (5mol%) inoshandiswa pakushandisa ma optical applications

Masevhisi esimbi: Cr/Au (100/1000Å) electrode patterning

3. Rutsigiro rwehunyanzvi

· Kutsanangurwa kwezvinhu: XRD rocking curves (FWHM<0.01°), AFM surface analysis

· Kutevedzera mudziyo: FEM modeling yeSAW filter design optimization

Mhedziso

Mawafer eLiTaO₃ anoramba achigonesa kufambira mberi kwetekinoroji mukutaurirana kweRF, mafotoniki akabatanidzwa, uye masensa ezvakatipoteredza akaomarara. Hunyanzvi hweXKH hwezvinhu, kunyatsogadzira, uye rutsigiro rweinjiniya yemashandisirwo zvinobatsira vatengi kukunda matambudziko ekugadzira mumasisitimu emagetsi echizvarwa chinotevera.