8inch 200mm Silicon Carbide SiC Wafers 4H-N mhando yekugadzira giredhi 500um ukobvu

Tsananguro pfupi:

Shanghai Xinkehui Tech. Co., Ltd inopa sarudzo yakanakisa uye mitengo yepamusoro yemawafer emhando yepamusoro esilicon carbide uye substrates anosvika 8inch dhayamita ane mhando dzeN- uye semi-insulating. Makambani madiki neakuru emidziyo yesemiconductor uye ma laboratori ekutsvagisa pasi rese anoshandisa uye anovimba nemawafer edu esilicon carbide.

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200mm 8inch SiC Substrate Tsanangudzo

Saizi: 8inch;

Dhayamita: 200mm±0.2;

Ukobvu: 500um±25;

Kutarisa pamusoro: 4 kuenda ku [11-20]±0.5°;

Kurongeka kweNotch:[1-100]±1°；

Kudzika kwenotch: 1±0.25mm；

Pombi diki: <1cm2;

Maplate eHex: Hapana Anobvumidzwa;

Kuramba: 0.015~0.028Ω;

EPD:<8000cm2;

TED:<6000cm2

BPD: <2000cm2

TSD:<1000cm2

SF: nzvimbo <1%

TTV≤15um；

Warp≤40um；

Bow≤25um；

Nzvimbo dzakawanda: ≤5%;

Kukwenya: <5 uye Hurefu Hwakabatanidzwa < 1 Dhayamita yeWafer;

Machipisi/Zvidimbu: Hapana chinobvumidza D>0.5mm Upamhi uye Kudzika;

Matsemuka: Hapana;

Vara: Hapana

Mupendero wewafer: Chamfer;

Kupedzisa pamusoro: Double Side Polish, Si Face CMP;

Kurongedza: Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete;

Matambudziko aripo pari zvino pakugadzirwa kwemakristaro e200mm 4H-SiC mainl

1) Kugadzirwa kwemakristaro embeu emhando yepamusoro e200mm 4H-SiC;

2) Kudzora tembiricha yakakura kusaenzana uye maitiro ekugadzira nucleation;

3) Kushanda zvakanaka kwekutakura uye kushanduka kwezvikamu zvegasi muhurongwa hwekukura kwekristaro yakakura;

4) Kutsemuka kwemakristaro uye kuwanda kwezvirema zvinokonzerwa nekuwedzera kwekupisa kukuru.

Kuti tikunde matambudziko aya uye kuti tiwane wafers dzemhando yepamusoro dze200mm SiC, mhinduro dzinokurudzirwa:

Panyaya yekugadzirira kristalo yembeu ye200mm, munda wemvura inoyerera zvakanaka, uye kuunganidza kwakakura zvakadzidzwa uye zvakagadzirwa kuti zvitariswe nezvemhando yekristaro nehukuru hwekukura; Kutanga nekristaro ye150mm SiC se:d, ita iteration yekristaro yembeu kuti uwedzere zvishoma nezvishoma kristaro yeSiC kusvika yasvika 200mm; Kuburikidza nekukura kwekristaro kakawanda uye maitiro, zvishoma nezvishoma gadzirisa mhando yekristaro munzvimbo yekristaro, uye kuvandudza mhando yemakristaro embeu ye200mm.

Panyaya yekugadzirira makristaro ekufambisa mvura ne substrate e200mm, tsvakiridzo yakagadzirisa dhizaini yefeld ne flow field yekukura kwemakristaro makuru, kuita kukura kwemakristaro ekufambisa mvura e200mm eSiC, uye kudzora kufanana kwedoping. Mushure mekugadzirisa nekuumba kristaro, ingot ye 4H-SiC inofambisa magetsi ine 8-inch ine dhayamita yakajairika yakawanikwa. Mushure mekucheka, kukuya, kupukuta, kugadzirisa kuti uwane mawafer eSiC 200mm ane ukobvu hwe 525um kana zvakadaro.