8 inch SiC silicon carbide wafer 4H-N mhando 0.5mm kugadzirwa kwegiredhi rekutsvaga giredhi tsika yakakwenenzverwa substrate

Tsanangudzo Pfupi

Silicon carbide (SiC), inozivikanwawo sesilicon carbide, is semiconductor ine silicon uye kabhoni ine kemikari formula SiC. SiC inoshandiswa mune semiconductor midziyo yemagetsi inoshanda pakupisa kwakanyanya kana kumanikidza kwakanyanya, kana zvese zviri zviviri. SiC zvakare chimwe chezvinhu zvakakosha zve LED, inzvimbo yakajairwa yekukura midziyo yeGaN, uye inogona zvakare kushandiswa sedhishi yekupisa kune yakakwirira-simba maLED.
8-inch silicon carbide substrate chikamu chakakosha chechizvarwa chechitatu chemidziyo yesemiconductor, ine hunhu hwekuputsika kwemunda kusimba, yakanyanya kupisa conductivity, yakakwira electron saturation drift rate, nezvimwewo, uye inokodzera kugadzira kupisa kwepamusoro. high-voltage, uye yakakwirira-simba zvemagetsi zvigadzirwa. Nzvimbo dzayo huru dzekushandisa dzinosanganisira mota dzemagetsi, njanji, high-voltage simba rekufambisa uye shanduko, photovoltaics, 5G kutaurirana, kuchengetedza simba, aerospace, uye AI core computing power data centers.

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Iwo makuru maficha e8-inch silicon carbide substrate 4H-N mhando inosanganisira:

1. Microtubule density: ≤ 0.1 / cm² kana yakaderera, yakadai se microtubule density yakanyanya kuderedzwa kusvika pasi pe0.05 / cm² mune zvimwe zvigadzirwa.
2. Crystal fomu reshiyo: 4H-SiC crystal fomu reshiyo inosvika 100%.
3. Resistivity: 0.014 ~ 0.028 Ω · cm, kana zvakanyanya kugadzikana pakati pe 0.015-0.025 Ω · cm.
4. Surface roughness: CMP Si Face Ra≤0.12nm.
5. Hukobvu: Kazhinji 500.0±25μm kana 350.0±25μm.
6. Chamfering angle: 25±5° kana 30±5° nokuda A1/A2 zvichienderana ukobvu.
7. Total dislocation density: ≤3000/cm².
8. Surface metal kusvibiswa: ≤1E+11 maatomu/cm².
9. Kupeta uye warpage: ≤ 20μm uye ≤2μm, maererano.
Aya maitiro anoita 8-inch silicon carbide substrates ine kukosha kwekushandisa kwakakosha mukugadzirwa kweyepamusoro-tembiricha, yakakwirira-frequency, uye yakakwirira-simba zvemagetsi zvishandiso.

8inch silicon carbide wafer ine akati wandei maapplication.

1. Zvigadzirwa zvemagetsi: SiC wafers inoshandiswa zvakanyanya mukugadzirwa kwemagetsi emagetsi emagetsi akadai sesimba MOSFETs (metal-oxide-semiconductor field-effect transistors), Schottky diodes, uye magetsi ekubatanidza modules. Nekuda kweiyo yakanyanya kupisa conductivity, yakakwira breakdown voltage, uye yakakwira erekitironi kufamba kweSiC, zvishandiso izvi zvinokwanisa kuita zvinogoneka, zvepamusoro-kuita shanduko yesimba munzvimbo yepamusoro-tembiricha, yakakwirira-voltage, uye yakakwirira-frequency nharaunda.

2. Optoelectronic madivayiri: SiC wafers inoita basa rakakosha mumidziyo yeoptoelectronic, inoshandiswa kugadzira mafotodetectors, laser diodes, ultraviolet sources, etc. Silicon carbide's superior optical and electronic properties inoita kuti ive chinhu chekusarudza, kunyanya mumashandisirwo anoda kupisa kwakanyanya, high frequencies, uye high power level.

3. Radio Frequency (RF) Devices: SiC chips inoshandiswawo kugadzira zvigadzirwa zveRF zvakadai seRF simba amplifiers, high-frequency switches, RF sensors, nezvimwewo. SiC's high thermal kugadzikana, yakakwirira-frequency maitiro, uye kurasikirwa kwakaderera kunoita kuti ive yakanakira RF zvikumbiro senge waya yekutaurirana uye radar masisitimu.

4.High-temperature electronics: Pamusana pekugadzikana kwavo kwekushisa uye kunyunguduka kwekushisa, SiC wafers inoshandiswa kugadzira zvigadzirwa zvemagetsi zvakagadzirirwa kushanda munzvimbo dzakakwirira-kupisa, kusanganisira magetsi emagetsi emagetsi, sensors, uye controllers.

Nzira huru dzekushandisa dze8-inch silicon carbide substrate 4H-N mhando dzinosanganisira kugadzirwa kweyepamusoro-tembiricha, yakakwirira-frequency, uye yakakwirira-simba magetsi emagetsi, kunyanya muminda yemagetsi emotokari, simba rezuva, kugadzirwa kwesimba remhepo, magetsi. zvitima, maseva, midziyo yemumba, uye mota dzemagetsi. Pamusoro pezvo, zvishandiso zvakaita seSiC MOSFETs neSchottky diode zvakaratidza kuita kwakanakisa mukuchinja ma frequency, mapfupi-circuit kuyedza, uye inverter application, kutyaira kushandiswa kwavo mumagetsi emagetsi.

XKH inogona kugadzirwa nemhando dzakasiyana zvichienderana nezvinodiwa nevatengi. Yakasiyana pamusoro roughness uye polishing marapirwo aripo. Mhando dzakasiyana dzedoping (senge nitrogen doping) dzinotsigirwa. XKH inogona kupa rubatsiro rwehunyanzvi uye masevhisi ekubvunza kuti ive nechokwadi chekuti vatengi vanogona kugadzirisa matambudziko mukuita kwekushandisa. Iyo 8-inch silicon carbide substrate ine zvakakosha zvakakosha maererano nekuderedza mutengo uye kuwedzera huwandu, izvo zvinogona kuderedza iyo unit chip mutengo ne50% kana ichienzaniswa ne6-inch substrate. Pamusoro pezvo, kuwanda kweiyo 8-inch substrate kunobatsira kuderedza geometrical kutsauka uye kumucheto warping panguva yekugadzira, nekudaro kuvandudza goho.