8 inch SiC silicon carbide wafer 4H-N mhando 0.5mm giredhi rekugadzira rekutsvaga giredhi rekugadzira substrate yakagadziriswa yakashongedzwa

8 inch SiC silicon carbide wafer 4H-N mhando 0.5mm giredhi rekugadzira rekutsvaga giredhi substrate yakagadziriswa yakashongedzwa Mufananidzo Wakafanotaurwa

Tsananguro pfupi:

Silicon carbide (SiC), inozivikanwawo sesilicon carbide, imhando ye semiconductor ine silicon nekabhoni ine fomura yemakemikari SiC. SiC inoshandiswa mumidziyo yemagetsi ye semiconductor inoshanda pakupisa kwakanyanya kana kumanikidzwa kwakanyanya, kana zvese zviri zviviri. SiC ndeimwe yezvikamu zvakakosha zve LED, i substrate yakajairika yekurima michina yeGaN, uye inogona zvakare kushandiswa se heat sink ye LEDs dzine simba guru.
Substrate yesilicon carbide ine masendimita masere chikamu chakakosha chechizvarwa chechitatu chezvinhu zve semiconductor, ine hunhu hwekusimba kwemunda kwakakura, conductivity yekupisa kwakanyanya, electron saturation drift rate, nezvimwewo, uye yakakodzera kugadzira zvishandiso zvemagetsi zvinopisa zvakanyanya, zvine voltage yakawanda, uye zvine simba guru. Nzvimbo dzayo huru dzekushandisa dzinosanganisira mota dzemagetsi, transit yechitima, transmission yesimba remagetsi rakawanda uye shanduko, photovoltaics, 5G communications, energy storage, aerospace, uye AI core computing power data centers.

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Zvinhu zvirimo

Zvinhu zvikuru zve 8-inch silicon carbide substrate 4H-N zvinosanganisira:

1. Kuwanda kwe microtubule: ≤ 0.1/cm² kana pasi, senge kuwanda kwe microtubule kunoderedzwa zvakanyanya kusvika pasi pe 0.05/cm² mune zvimwe zvigadzirwa.
2. Chiyero chechimiro chekristaro: Chiyero chechimiro chekristaro che4H-SiC chinosvika 100%.
3. Kuramba: 0.014~0.028 Ω·cm, kana kuti kugadzikana kuri pakati pe0.015-0.025 Ω·cm.
4. Kuomarara kwepamusoro: CMP Si Face Ra≤0.12nm.
5. Ukobvu: Kazhinji 500.0±25μm kana 350.0±25μm.
6. Kona yekumonera: 25±5° kana 30±5° yeA1/A2 zvichienderana nekukora kwayo.
7. Kuwanda kwenzvimbo yese: ≤3000/cm².
8. Kusvibiswa kwesimbi pamusoro: ≤1E+11 maatomu/cm².
9. Kukombama uye kuchinjika: ≤ 20μm uye ≤2μm, zvichiteerana.
Hunhu uhwu hunoita kuti simbi dzesilicon carbide dzine ma inch 8 dzive nekushandiswa kwakakosha mukugadzirwa kwemidziyo yemagetsi inodziya zvakanyanya, ine mafrequency akawanda, uye ine simba guru.

Wafer ye 8inch silicon carbide ine mashandisirwo akasiyana-siyana.

1. Zvishandiso zvemagetsi: SiC wafers dzinoshandiswa zvakanyanya mukugadzira zvishandiso zvemagetsi zvine simba zvakaita se power MOSFETs (metal-oxide-semiconductor field-effect transistors), Schottky diodes, uye power integration modules. Nekuda kwe high thermal conductivity, high breakdown voltage, uye high electron mobility yeSiC, zvishandiso izvi zvinogona kuwana simba rekushandura rinoshanda zvakanaka munzvimbo dzine tembiricha yakakwira, high-voltage, uye high-frequency.

2. Midziyo yemagetsi: SiC wafers inoita basa rakakosha mumidziyo yemagetsi, inoshandiswa kugadzira ma photodetector, laser diodes, ultraviolet sources, nezvimwewo. Hunhu hwepamusoro hweSilicon carbide hwe optical uye electronic hunoita kuti ive chinhu chinosarudzwa, kunyanya mukushandiswa kunoda tembiricha yakakwira, ma frequency akakwira, uye masimba akakwira.

3. Midziyo yeRadio Frequency (RF): Machipisi eSiC anoshandiswawo kugadzira michina yeRF yakaita seRF power amplifiers, high-frequency switches, RF sensors, nezvimwewo. SiC ine kugadzikana kwakanyanya kwekupisa, hunhu hwehigh-frequency, uye kurasikirwa kushoma zvinoita kuti ive yakakodzera maRF applications akadai se wireless communications uye radar systems.

4. Magetsi emagetsi anodziya zvakanyanya: Nekuda kwekugadzikana kwawo kwakanyanya pakupisa uye kusimba kwekupisa, mawafer eSiC anoshandiswa kugadzira zvigadzirwa zvemagetsi zvakagadzirirwa kushanda munzvimbo dzinodziya zvakanyanya, kusanganisira magetsi emagetsi anodziya zvakanyanya, masensa, uye vanodzora.

Nzira huru dzekushandisa 8-inch silicon carbide substrate 4H-N dzinosanganisira kugadzirwa kwemidziyo yemagetsi inodziya zvakanyanya, ine mafrequency akawanda, uye ine simba guru, kunyanya muminda yemagetsi emotokari, simba rezuva, kugadzira simba remhepo, maroketi emagetsi, maserver, midziyo yemumba, uye mota dzemagetsi. Pamusoro pezvo, michina yakaita seSiC MOSFETs uye Schottky diodes yakaratidza kushanda kwakanaka mukuchinja mafrequency, kuyedza kweshort-circuit, uye mashandisirwo einverter, zvichikonzera kushandiswa kwavo mumagetsi emagetsi.

XKH inogona kugadziriswa nehukobvu hwakasiyana zvichienderana nezvinodiwa nevatengi. Kune nzira dzakasiyana dzekugadzirisa ganda nekupukuta. Mhando dzakasiyana dzekushandisa doping (senge nitrogen doping) dzinotsigirwa. XKH inogona kupa rutsigiro rwehunyanzvi uye masevhisi ekubvunza kuti ive nechokwadi chekuti vatengi vanogona kugadzirisa matambudziko panguva yekushandisa. Substrate ye 8-inch silicon carbide ine mabhenefiti makuru maererano nekudzikisa mutengo uye kuwedzera kugona, izvo zvinogona kuderedza mutengo weyuniti chip neinenge 50% zvichienzaniswa ne substrate ye6-inch. Pamusoro pezvo, kuwedzera kwehukobvu hwe substrate ye8-inch kunobatsira kuderedza kutsauka kwejometri uye kupwanyika kwemucheto panguva yekugadzira, nokudaro zvichivandudza goho.