6inch 150mm Silicon Carbide SiC Wafers 4H-N mhando yeMOS kana SBD Production Research uye Dummy giredhi

Tsanangudzo Pfupi:

Iyo 6-inch silicon carbide single crystal substrate ndeyepamusoro-inoshanda zvinhu zvine zvakanakisa zvemuviri uye makemikari zvimiro. Yakagadzirwa kubva kune yakakwira-kuchena silicon carbide single crystal zvinhu, inoratidza yepamusoro yekupisa conductivity, kugadzikana kwemichina, uye yakakwirira-tembiricha kuramba. Iyi substrate, yakagadzirwa nemagadzirirwo ekugadzira zvinhu uye zvemhando yepamusoro, yave chinhu chinodiwa pakugadzirwa kwezvigadzirwa zvemagetsi zvemhando yepamusoro mundima dzakasiyana.

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Minda Yekushandisa

Iyo 6-inch silicon carbide single crystal substrate inoita basa rakakosha mumaindasitiri akawanda. Chekutanga, inoshandiswa zvakanyanya muindasitiri yesemiconductor kugadzira michina ine simba repamusoro-soro semagetsi transistors, maseketi akabatanidzwa, uye ma module emagetsi. Yayo yakakwirira yekupisa conductivity uye yakakwirira-kupisa kupikisa inoita kuti zviri nani kupisa kupisa, zvichiita kuti kuve nekugadzirisa kushanda uye kuvimbika. Kechipiri, silicon carbide wafers yakakosha muminda yekutsvagisa yekuvandudza kwezvinhu zvitsva nemidziyo. Pamusoro pezvo, iyo silicon carbide wafer inowana mashandisirwo akawandisa mumunda weoptoelectronics, kusanganisira kugadzirwa kwemaLED uye laser diode.

Zvigadzirwa Zvinotsanangurwa

Iyo 6-inch silicon carbide single crystal substrate ine dhayamita ye6 inches (inenge 152.4 mm). The pamusoro roughness iri Ra <0.5 nm, uye ukobvu iri 600 ± 25 μm. Iyo substrate inogona kugadzirwa neN-mhando kana P-mhando conductivity, zvichibva pane zvinodiwa nevatengi. Uyezve, inoratidza kugadzikana kwakasiyana-siyana kwemuchina, inokwanisa kutsungirira kudzvanywa uye kudedera.

Diameter		150±2.0mm (6inch)
Ukobvu		350 μm±25μm
Orientation		Paaxis: <0001> ± 0.5°		Off axis: 4.0 ° yakananga 1120±0.5 °
Polytype		4H
Kuramba (Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Primary flat orientation		{10-10}±5.0°
Hurefu hwembarara hwekutanga (mm)		47.5 mm±2.5 mm
Edge		Chamfer
TTV / Bow / Warp (um)		≤15 /≤40 /≤60
AFM Front (Si-face)		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Orenji svuura/makomba/pakatsemuka/kusvibiswa/mavara/mavara		Hapana	Hapana		Hapana
indents		Hapana	Hapana		Hapana

Iyo 6-inch silicon carbide single crystal substrate ndeyepamusoro-inoshanda zvinhu zvakanyanya kushandiswa semiconductor, tsvakiridzo, uye optoelectronics maindasitiri. Inopa yakanakisa yekupisa conductivity, kugadzikana kwemichina, uye yakakwirira-tembiricha kuramba, ichiita kuti ive yakakodzera kugadzirwa kweyepamusoro-simba emagetsi zvishandiso uye zvitsva zvekutsvaga zvinhu. Isu tinopa akasiyana maratidziro uye customization sarudzo kuti isangane neyakasiyana zvinodiwa nevatengi.Bata isu kuti uwane rumwe ruzivo nezve silicon carbide wafers!