6inch 150mm Silicon Carbide SiC Wafers 4H-N mhando yeMOS kana SBD Production Research uye Dummy grade

Tsananguro pfupi:

Iyo substrate yesilicon carbide single crystal ine mainches matanhatu imhando yepamusoro ine hunhu hwakanaka hwemuviri uye hwemakemikari. Yakagadzirwa kubva kuzvinhu zvesilicon carbide single crystal zvine hunhu hwakanaka, inoratidza kufambisa kwekupisa kwepamusoro, kugadzikana kwemuchina, uye kuramba kupisa kwakanyanya. Iyi substrate, yakagadzirwa nenzira dzakanyatsogadzirwa uye zvinhu zvemhando yepamusoro, yave chinhu chinodiwa pakugadzira zvishandiso zvemagetsi zvinoshanda zvakanyanya muminda yakasiyana-siyana.

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Minda Yekushandisa

Iyo silicon carbide single crystal substrate ine 6-inch inoita basa rakakosha mumaindasitiri akasiyana-siyana. Chekutanga, inoshandiswa zvakanyanya muindasitiri ye semiconductor pakugadzira zvishandiso zvemagetsi zvine simba guru zvakaita se power transistors, integrated circuits, uye power modules. Kupisa kwayo kwakanyanya uye kuramba kupisa kwakanyanya kunoita kuti kupisa kuparare zviri nani, zvichikonzera kushanda zvakanaka uye kuvimbika. Chechipiri, silicon carbide wafers dzakakosha muminda yekutsvagisa pakugadzira zvinhu zvitsva nemidziyo. Pamusoro pezvo, silicon carbide wafer inoshandiswa zvakanyanya mumunda we optoelectronics, kusanganisira kugadzira ma LED nema laser diodes.

Zvimiro zveChigadzirwa

Substrate yesilicon carbide ine 6-inch ine dhayamita yemainji matanhatu (inenge 152.4 mm). Kuoma kwepamusoro iRa < 0.5 nm, uye ukobvu hwayo i600 ± 25 μm. Substrate inogona kugadziriswa neN-type kana P-type conductivity, zvichienderana nezvinodiwa nevatengi. Uyezve, inoratidza kugadzikana kwakanyanya kwemuchina, inokwanisa kutsungirira kumanikidzwa uye kudedera.

Dhayamita		150±2.0mm(6inch)
Ukobvu		350 μm±25μm
Kudzidziswa		Padivi: <0001>±0.5°		Off axis：4.0° yakananga ku1120±0.5°
Mhando yePolytype		4H
Kuramba (Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Kutarisa kwakatandama kwekutanga		{10-10}±5.0°
Kureba kwepuraimari (mm)		47.5 mm±2.5 mm
Mupendero		Chamfer
TTV/Uta/Warp (um)		≤15 /≤40 /≤60
AFM Front (Si-face)		ChiPolish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm (10mm * 10mm)	≤5μm (10mm * 10mm)		≤10μm (10mm * 10mm)
TTV		≤5μm	≤10μm		≤15μm
Makwande/makomba/matsemuka/kusvibiswa/mavara/kupatsanurwa kweruvara rweorenji		Hapana	Hapana		Hapana
indents		Hapana	Hapana		Hapana

Iyo silicon carbide single crystal substrate ine mainch matanhatu imhando yepamusoro inoshandiswa zvakanyanya mumaindasitiri e semiconductor, research, uye optoelectronics. Inopa conductivity yakanaka yekupisa, kugadzikana kwemuchina, uye kuramba kupisa kwakanyanya, zvichiita kuti ive yakakodzera kugadzirwa kwemidziyo yemagetsi ine simba guru uye kutsvaga zvinhu zvitsva. Tinopa marongero akasiyana-siyana uye sarudzo dzekugadzirisa kuti zvienderane nezvinodiwa nevatengi zvakasiyana-siyana.Tibatei kuti muwane rumwe ruzivo nezve silicon carbide wafers!