4inch Semi-insulting SiC wafers HPSI SiC substrate Prime Production grade

Tsananguro pfupi:

Iyo simbi yekupolisha ine mativi maviri ine silicon carbide ine mativi mana ine hunyoro hwakatsetseka uye ine purity, inonyanya kushandiswa mukutaurirana kwe5G nedzimwe nzvimbo, ine mabhenefiti ekuvandudza redhiyo frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity, uye mamwe maapplication, uye inoonekwa senzvimbo yakakodzera yekugadzira zvishandiso zvemagetsi zve microwave.

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Tsanangudzo yeChigadzirwa

Silicon carbide (SiC) chinhu chinoumbwa ne compound semiconductor zvinhu zvinoumbwa ne carbon ne silicon, uye chimwe chezvinhu zvakanaka pakugadzira michina inodziya zvakanyanya, ine ma frequency akawanda, ine simba guru uye ine voltage yakawanda. Kana tichienzanisa ne silicon material yechinyakare (Si), bhandi re silicon carbide rakarambidzwa rakapetwa katatu kupfuura silicon; thermal conductivity yakapetwa ka4-5 kupfuura silicon; breakdown voltage yakapetwa ka8-10 kupfuura silicon; uye electron saturation drift rate yakapetwa kaviri-katatu kupfuura silicon, iyo inosangana nezvinodiwa neindasitiri yemazuva ano zve high-power, high-voltage, uye high-frequency, uye inonyanya kushandiswa kugadzira high-speed, high-frequency, high-power uye light-emitting electronic components, uye nzvimbo dzayo dzekushandisa dzinosanganisira smart grid, New energy vehicles, photovoltaic wind power, 5G communications, nezvimwewo. Mundima yemidziyo yemagetsi, silicon carbide diodes uye MOSFETs zvatanga kushandiswa mukutengeserana.

Mabhenefiti eSiC wafers/SiC substrate

Kudzivirira kupisa kwakanyanya. Upamhi hwebhandi resilicon carbide hwakarambidzwa hwakapetwa kaviri kusvika katatu kupfuura silicon, saka maerekitironi haawanzo kusvetuka pakupisa kwakanyanya uye anogona kutsungirira kupisa kwakanyanya, uye kufambisa kupisa kwesilicon carbide kwakapetwa ka4-5 kupfuura silicon, zvichiita kuti zvive nyore kudzima kupisa kubva mumudziyo uye zvichibvumira kupisa kwakanyanya. Hunhu hwekupisa kwakanyanya hunogona kuwedzera simba zvakanyanya, ukuwo zvichideredza zvinodiwa zvesystem yekupisa kupisa, zvichiita kuti terminal ive yakareruka uye iite diki.

Kuramba simba remagetsi rakakwirira. Simba resimbi reSilicon carbide rinopetwa kagumi pane resilicon, zvichiita kuti ikwanise kumira simba remagetsi rakakwirira, zvichiita kuti ive yakakodzera michina ine simba remagetsi rakawanda.

Kuramba mafrequency akakwira. Silicon carbide ine mwero wekudonha kwemaerekitironi wakapetwa kaviri kupfuura silicon, zvichiita kuti michina yayo mukudzimwa kwemagetsi haipo muchiitiko chekudhonza chiripo, inogona kuvandudza frequency yekuchinja kwemidziyo, kuti iite miniaturization yemidziyo.

Kurasikirwa nesimba kwakaderera. Silicon carbide ine simba shoma rekudzivirira magetsi kana tichienzanisa nezvinhu zvesilicon, kurasikirwa kwekufambisa magetsi kwakaderera; panguva imwe chete, bandwidth yakakwira yesilicon carbide inoderedza zvakanyanya kubuda kwemagetsi, kurasikirwa nesimba; pamusoro pezvo, zvishandiso zvesilicon carbide panguva yekudzima magetsi hazvipo muchiitiko chekudhonza magetsi chazvino, kurasikirwa kwekuchinjana kwakaderera.