4inch Semi-kutuka SiC wafers HPSI SiC substrate Prime Production giredhi

Tsanangudzo Pfupi:

Iyo 4-inch high-purity semi-insulated silicon carbide kaviri-sided polishing plate inonyanya kushandiswa mu5G kutaurirana uye mamwe minda, ine zvakanakira kuvandudza redhiyo frequency renji, kure-kureba kucherechedzwa, kupesana-kupindira, kukurumidza-kumhanya. , hukuru-hukuru hwekufambisa ruzivo uye mamwe maapplication, uye inoonekwa seyakanakira substrate yekugadzira microwave magetsi emagetsi.

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Silicon carbide (SiC) is a compound semiconductor material inoumbwa nezvinhu kabhoni nesilicon, uye ndechimwe chezvinhu zvakanakira kugadzira tembiricha, high-frequency, high-power and high-voltage devices. Kana ichienzaniswa neyechinyakare silicon zvinhu (Si), iyo inorambidzwa bhendi yakafara yesilicon carbide yakapetwa katatu iyo yesilicon; thermal conductivity ndeye 4-5 nguva yesilicon; iyo yekuputsika voltage ndeye 8-10 nguva yesilicon; uye electron saturation drift rate ndeye 2-3 nguva yesilicon, iyo inosangana nezvinodiwa neindasitiri yemazuva ano yemasimba makuru, high-voltage, uye high-frequency, uye inonyanya kushandiswa kugadzira kukurumidza, yakakwirira-. frequency, high-simba uye light-emitting electronic components, uye nzvimbo dzayo dzepasi dzekushandisa dzinosanganisira smart grid, New energy mota, photovoltaic wind power, 5G communications, etc. yemidziyo yemagetsi, silicon carbide diodes uye MOSFETs dzatanga kushandiswa kutengeserana.

Zvakanakira zveSiC wafers / SiC substrate

High tembiricha kuramba. Iyo inorambidzwa bhendi upamhi hwesilicon carbide ndeye 2-3 nguva yesilicon, saka maerekitironi haanyanyi kusvetuka patembiricha yakakwira uye anogona kumira tembiricha yakakwira yekushanda, uye thermal conductivity yesilicon carbide ndeye 4-5 nguva yesilicon, zvichiita. zviri nyore kubvisa kupisa kubva pachigadzirwa uye kubvumira kune yakanyanya kumisa tembiricha yekushandisa. Hunhu hwepamusoro-tembiricha hunogona kuwedzera zvakanyanya kuwanda kwesimba, uku ichidzikisa zvinodikanwa zveiyo kupisa dissipation system, zvichiita kuti terminal iwedzere kureruka uye miniaturised.

High voltage resistance. Silicon carbide's breakdown field strength is 10 times that of silicon, ichiita kuti ikwanise kumira nepamusoro-soro, zvichiita kuti ive yakakodzera kune yakakwirira-voltage michina.

High-frequency resistance. Silicon carbide ine zvakapetwa kaviri iyo saturation electron Drift rate yesilicon, zvichikonzera kuti zvigadziriso zvayo mukuvharwa hazvipo mune yazvino yekudhonza chiitiko, inogona zvinobudirira kuvandudza mudziyo wekuchinja frequency, kuti uwane mudziyo miniaturisation.

Kupera simba kwakaderera. Silicon carbide ine yakanyanya kuderera pa-kupikisa kana ichienzaniswa nesilicon zvinhu, yakaderera conduction kurasikirwa; panguva imwecheteyo, iyo yakakwirira bandwidth yesilicon carbide inoderedza zvakanyanya kudonha ikozvino, kurasikirwa kwesimba; uyezve, silicon carbide zvishandiso mukuvhara maitiro haipo mune yazvino dhiza chiitiko, yakaderera switching kurasikirwa.