3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-kutuka SiC wafers

3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-inotuka SiC wafers Featured Image

Tsanangudzo Pfupi

Yepamusoro mhando imwe crystal SiC wafer (Silicon Carbide) kune zvemagetsi uye optoelectronic indasitiri.3inch SiC wafer ichizvarwa chinotevera semiconductor zvinhu, semi-insulating silicon-carbide wafers ye3-inch dhayamita.Iwo mawafer anoitirwa kugadzirwa kwesimba, RF uye optoelectronics zvishandiso.

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Chigadzirwa Specification

3-inch 4H semi-insulated SiC (silicon carbide) substrate wafers inowanzoshandiswa semiconductor zvinhu.4H inoratidza tetrahexahedral crystal structure.Semi-insulation inoreva kuti iyo substrate ine yakakwirira yekupikisa maitiro uye inogona kuve yakaparadzaniswa nekuyerera kwazvino.

Mawaferi akadaro ane anotevera hunhu: yakakwira yekupisa conductivity, yakaderera conduction kurasikirwa, yakanakisa kupisa tembiricha kuramba, uye yakanakisa mechaniki uye kugadzikana kwemakemikari.Nekuda kwekuti silicon carbide ine gap rakakura resimba uye inokwanisa kumira tembiricha yakakwira uye yakakwira magetsi emumunda mamiriro, 4H-SiC semi-insulated wafers anoshandiswa zvakanyanya mumagetsi emagetsi neredhiyo frequency (RF) zvishandiso.

Iwo mashandisirwo makuru e4H-SiC semi-insulated wafers anosanganisira:

1--Magetsi emagetsi: 4H-SiC wafers anogona kushandiswa kugadzira magetsi ekuchinja magetsi akadai seMOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) uye Schottky diodes.Midziyo iyi ine yakaderera conduction uye kushandura kurasikirwa mune yakakwira voltage uye yakakwirira tembiricha nharaunda uye inopa yakanyanya kunaka uye kuvimbika.

2--Radio Frequency (RF) Zvishandiso: 4H-SiC semi-insulated wafers inogona kushandiswa kugadzira yakakwira simba, yakakwira frequency RF simba amplifiers, chip resistors, mafirita, uye zvimwe zvishandiso.Silicon carbide ine zvirinani kuita kwepamusoro-frequency kuita uye kugadzikana kwemafuta nekuda kweiyo yakakura maerekitironi saturation dhift rate uye yakakwirira yekupisa conductivity.

3--Optoelectronic zvishandiso: 4H-SiC semi-insulated wafers inogona kushandiswa kugadzira yakakwirira-simba laser diode, UV chiedza detectors uye optoelectronic integrated circuits.

Panyaya yekutungamira kwemusika, kudiwa kwe4H-SiC semi-insulated wafers kuri kuwedzera neminda iri kukura yemagetsi emagetsi, RF uye optoelectronics.Izvi zvinokonzerwa nekuti silicon carbide ine huwandu hwakawanda hwemashandisirwo, kusanganisira simba remagetsi, mota dzemagetsi, renewable simba uye kutaurirana.Mune ramangwana, musika we4H-SiC semi-insulated wafers unoramba uchivimbisa uye unotarisirwa kutsiva zvakajairwa silicon zvinhu mukushandisa kwakasiyana.