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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um ukobvu

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um ukobvu Mufananidzo Wakatsanangurwa
  • 4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um ukobvu
  • 4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um ukobvu

Tsananguro pfupi:

Mawafer esilicon carbide anoshandiswa mumidziyo yemagetsi yakaita se power diodes, MOSFETs, michina ye microwave ine simba guru, uye ma RF transistors, zvichiita kuti simba rishande zvakanaka uye ritarisirwe zvakanaka. Mawafer eSiC ne substrates anoshandiswawo mumagetsi emotokari, masisitimu emuchadenga, uye matekinoroji esimba rinogona kushandiswazve.


Zvinhu zvirimo

Ungasarudza Sei Silicon Carbide Wafers & SiC Substrates?

Pakusarudza mawafer esilicon carbide (SiC) uye substrates, pane zvinhu zvakati wandei zvekufunga nezvazvo. Heano mamwe maitiro akakosha:

Rudzi rweChinhu: Sarudza rudzi rwechinhu cheSiC chinokodzera zvaunoshandisa, senge 4H-SiC kana 6H-SiC. Chimiro chekristaro chinoshandiswa zvakanyanya i4H-SiC.

Rudzi rweDoping: Sarudza kana uchida substrate yeSiC yakadhayiwa kana isina kudhayiwa. Mhando dzedoping dzinozivikanwa ndedzeN-type (n-doped) kana P-type (p-doped), zvichienderana nezvaunoda.

Hunhu hweKristaro: Ongorora hunhu hwekristaro hwemawafer eSiC kana substrates. Hunhu hunodiwa hunotsanangurwa nematanho akadai sehuwandu hwezvikanganiso, kurongeka kwekristaro, uye kuomarara kwenzvimbo.

Dhayamita yeWafer: Sarudza saizi yakakodzera yewafer zvichienderana nekushandisa kwako. Saizi dzakajairika dzinosanganisira 2 inches, 3 inches, 4 inches, uye 6 inches. Kana dhayamita yakakura, unogona kuwana goho rakawanda pawafer imwe neimwe.

Ukobvu: Funga nezvekukora kunodiwa kwemawafer eSiC kana substrates. Sarudzo dzakajairika dzekukora dzinotangira pama micrometer mashoma kusvika kumazana ema micrometer.

Kutungamira: Sarudza kutenderera kwekristaro kunoenderana nezvinodiwa neapplication yako. Kutungamira kwakajairika kunosanganisira (0001) ye4H-SiC uye (0001) kana (0001̅) ye6H-SiC.

Kupedzisa Pamusoro: Ongorora kupedzisa pamusoro pemawafer eSiC kana substrates. Pamusoro pacho panofanira kunge pakapfava, pakakweshwa, uye pasina mavanga kana tsvina.

Mukurumbira weMutengesi: Sarudza mutengesi ane mukurumbira ane ruzivo rwakakura mukugadzira mawafer eSiC emhando yepamusoro uye substrates. Funga nezvezvinhu zvakaita sehunyanzvi hwekugadzira, kudzora mhando, uye ongororo dzevatengi.

Mutengo: Funga nezvezvinorehwa nemutengo, kusanganisira mutengo wewafer imwe neimwe kana substrate pamwe chete nedzimwe mari dzekugadzirisa.

Zvakakosha kunyatsoongorora zvinhu izvi uye kubvunza nyanzvi dzeindasitiri kana vatengesi kuti uve nechokwadi chekuti mawafers nemidziyo yeSiC yakasarudzwa inosangana nezvinodiwa zvako.

Dhayagiramu Yakadzama

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness (1)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness (2)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness (3)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness (4)
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