4 inch SiC Wafers 6H Semi-Insulating SiC Substrates prime, research, uye dummy giredhi.
Chigadzirwa Specification
Giredhi | Zero MPD Yekugadzira Giredhi (Z Giredhi) | Standard Production Giredhi(P Giredhi) | Dummy Giredhi (D giredhi) | ||||||||
Diameter | 99.5 mm ~ 100.0 mm | ||||||||||
4H-SI | 500 μm±20 μm | 500 μm±25 μm | |||||||||
Wafer Orientation |
Kunze kweaxis : 4.0° yakananga<1120 > ±0.5° ye4H-N, Paaxis : <0001>±0.5° ye4H-SI | ||||||||||
4H-SI | ≤1cm-2 | ≤5 masendimita-2 | ≤15 masendimita-2 | ||||||||
4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
Yekutanga Flat Oriental | {10-10} ±5.0° | ||||||||||
Primary Flat Length | 32.5 mm±2.0 mm | ||||||||||
Secondary Flat Length | 18.0 mm±2.0 mm | ||||||||||
Secondary Flat Orientation | Silicon yakatarisana kumusoro: 90° CW. kubva Prime flat ± 5.0 ° | ||||||||||
Kusabatanidzwa kumucheto | 3 mm | ||||||||||
LTV/TTV/Bow/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
Kukasharara | C chiso | ChiPolish | Ra≤1 nm | ||||||||
Si face | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
Edge Cracks By High Intensity Chiedza | Hapana | Cumulative kureba ≤ 10 mm, imwe chete kureba≤2 mm | |||||||||
Hex Plates By High Intensity Chiedza | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||||||||
Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza | Hapana | Cumulative area≤3% | |||||||||
Visual Carbon Inclusions | Cumulative area ≤0.05% | Yakawedzerwa nzvimbo ≤3% | |||||||||
Silicon Surface Scratches By High Intensity Chiedza | Hapana | Cumulative kureba≤1*wafer dhayamita | |||||||||
Edge Chips High By Intensity Chiedza | Hapana anotenderwa ≥0.2 mm hupamhi nekudzika | 5 inotenderwa, ≤1 mm imwe neimwe | |||||||||
Silicon Surface Kusvibiswa NeKunyanya Kusimba | Hapana | ||||||||||
Packaging | Multi-wafer Cassette Kana Single Wafer Container |
Detailed Diagram
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