MaWafers eSiC ane 4 inch 6H Semi-Insulating SiC Substrates anobatsira zvikuru, kutsvagisa, uye giredhi remhando yepamusoro

MaWafers eSiC ane 4 inch 6H Semi-Insulating SiC Substrates prime, research, uye dummy grade Mufananidzo wakaratidzwa

Tsananguro pfupi:

Substrate yesilicon carbide ine semi-insulated inoumbwa nekucheka, kukuya, kupolisha, kuchenesa uye imwe tekinoroji yekugadzirisa mushure mekukura kwesilicon carbide crystal ine semi-insulated. Layer kana multilayer crystal layer inorimwa pasubstrate inosangana nezvinodiwa zvemhando yepamusoro se epitaxy, uye ipapo mudziyo we microwave RF unogadzirwa nekubatanidza dhizaini yedunhu uye kurongedza. Inowanikwa se2inch 3inch 4incgh 6inch 8inch maindasitiri, tsvakurudzo uye bvunzo grade semi-insulated silicon carbide single crystal substrates.

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Tsanangudzo yeChigadzirwa

Giredhi			Giredhi reKugadzirwa kweMPD Zero (Giredhi Z)			Giredhi Rekugadzirwa Kwakajairika (Giredhi reP)		Giredhi reDummy (Giredhi D)
Dhayamita			99.5 mm~100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Kudzidziswa kweWafer			Kudzima axis: 4.0° kuenda ku< 1120 > ± 0.5° ye4H-N, Kudzima axis: <0001>± 0.5° ye4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Kutungamira Kwakatsetseka Kwepakutanga		{10-10} ±5.0°
Hurefu Hwepamusoro-soro		32.5 mm±2.0 mm
Kureba Kwechipiri Kwakatsetseka		18.0 mm±2.0 mm
Kudzidziswa kwechipiri kwakadzikama		Silicon yakatarisana mudenga: 90° CW. kubva kuPrime flat ±5.0°
Kusabatanidzwa kweMupendero		3 mm
LTV/TTV/Uta /Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kuomarara			Chiso cheC				ChiPolish		Ra≤1 nm
			Chiso chaSi	CMP	Ra≤0.2 nm					Ra≤0.5 nm
Mipata yemucheto nechiedza chakasimba		Hapana						Kureba kwakawedzerwa ≤ 10 mm, imwe chete kureba ≤2 mm
Hex Plates Nechiedza Chakanyanya Kusimba		Nzvimbo yakaunganidzwa ≤0.05%						Nzvimbo yakaunganidzwa ≤0.1%
Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba		Hapana						Nzvimbo yakaunganidzwa ≤3%
Kubatanidzwa kweKabhoni Inoonekwa		Nzvimbo yakaunganidzwa ≤0.05%						Nzvimbo yakaunganidzwa ≤3%
Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba		Hapana						Kureba kwakawedzerwa ≤1 * dhayamita yewafer
Edge Chips High By Intensity Light		Hapana chinobvumidzwa ≥0.2 mm upamhi uye kudzika						5 inobvumirwa, ≤1 mm imwe neimwe
Kusvibiswa kweSilicon pamusoro Nesimba Rakanyanya		Hapana
Kurongedza		Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete