Wafer ine 3inch 76.2mm 4H-Semi SiC substrate wafer ine Silicon Carbide ine SiC wafers inonyadzisa zvishoma

Tsananguro pfupi:

Wafer yemhando yepamusoro yeSiC wafer (Silicon Carbide) inoshandiswa muindasitiri yemagetsi nemagetsi. Wafer yeSiC ye3inch imhando yemhando yepamusoro yezvigadzirwa zvemhando yepamusoro, ine mativi maviri esimbi, ine dhayamita ye3-inch. Mawafer aya akagadzirirwa kugadzira michina yemagetsi, RF uye optoelectronics.

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Mawafer epasi pevhu e3-inch 4H semi-insulated SiC (silicon carbide) imhando ye semiconductor inoshandiswa zvakanyanya. 4H inoratidza chimiro chekristaro chetetrahexahedral. Semi-insulation zvinoreva kuti pasi pevhu rine hunhu hwekudzivirira kwakanyanya uye rinogona kuparadzaniswa zvishoma nekuyerera kwemvura.

Mawafer akadaro emu substrate ane hunhu hunotevera: kufambiswa kwemhepo kwakanyanya, kurasikirwa nemhepo kwakaderera, kuramba kupisa kwakanyanya, uye kugadzikana kwakanaka kwemakanika nemakemikari. Nekuti silicon carbide ine gap yakakura yesimba uye inogona kutsungirira kupisa kwakanyanya uye mamiriro emagetsi akakwira, mawafer e4H-SiC semi-insulated anoshandiswa zvakanyanya mumagetsi emagetsi neredhiyo (RF).

Mashandisirwo makuru e4H-SiC semi-insulated wafers anosanganisira:

1--Magetsi emagetsi: Mawafer e4H-SiC anogona kushandiswa kugadzira zvishandiso zvekuchinja magetsi zvakaita seMOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) uye Schottky diodes. Midziyo iyi ine kurasikirwa kwakaderera kwekufambisa magetsi nekuchinja magetsi munzvimbo dzine voltage yakakwira uye tembiricha yakakwira uye inopa kushanda zvakanaka uye kuvimbika kwakanyanya.

2--Zvishandiso zveRadio Frequency (RF): Mawafer e4H-SiC semi-insulated anogona kushandiswa kugadzira maamplifiers eRF ane simba rakawanda, machip resistors, mafirita, nezvimwe zvishandiso. Silicon carbide ine mashandiro akanaka uye kugadzikana kwekupisa nekuda kwekukura kwayo kwemaerekitironi uye thermal conductivity yakakwira.

3--Midziyo yemagetsi: Mawafer e4H-SiC semi-insulated anogona kushandiswa kugadzira ma-laser diode ane simba guru, maUV light detectors uye macircuit akabatanidzwa e optoelectronic.

Panyaya yemusika, kudiwa kwemawafer e4H-SiC semi-insulated kuri kuwedzera nekukura kweminda yemagetsi emagetsi, RF uye optoelectronics. Izvi zvinokonzerwa nekuti silicon carbide ine mashandisirwo akasiyana-siyana, anosanganisira kushandisa simba zvakanaka, mota dzemagetsi, simba rinogona kudzokororwa uye kutaurirana. Mune ramangwana, musika wemawafer e4H-SiC semi-insulated uchiri kuvimbisa zvikuru uye unotarisirwa kutsiva zvinhu zvesilicon zvechinyakare mukushandiswa kwakasiyana-siyana.