3 inch High Purity (isina kupetwa)Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)

Tsanangudzo Pfupi:

Iyo 3-inch High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) wafer ndeye premium-giredhi substrate yakagadziridzwa kune yakakwirira-simba, yakakwirira-frequency, uye optoelectronic application. Yakagadzirwa isina kuvharwa, yakakwira-kuchena 4H-SiC zvinhu, aya mawafer anoratidza yakanakisa yekupisa conductivity, yakafara bandgap, uye yakasarudzika semi-insulating zvivakwa, zvichiita kuti zvive zvakakosha pakuvandudza kwechigadzirwa. Iine huchenjeri hwepamusoro uye hunhu hwepamusoro, HPSI SiC substrates inoshanda sehwaro hwechizvarwa chinotevera matekinoroji mumagetsi emagetsi, nharembozha, uye maindasitiri emuchadenga, achitsigira hunyanzvi munzvimbo dzakasiyana siyana.

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Product Detail

Product Tags

Properties

1. Zvinhu Zvenyama uye Zvimiro
● Rudzi Rwezvinhu: Kuchena Kwepamusoro (Kusina Kupedzwa) Silicon Carbide (SiC)
●Diameter: 3 inches (76.2 mm)
● Ukobvu: 0.33-0.5 mm, customizable zvichienderana nezvinodiwa zvekushandisa.
● Crystal Structure: 4H-SiC polytype ine hexagonal lattice, inozivikanwa nepamusoro ye electron kufamba uye kugadzikana kwekushisa.
● Mafambiro:
oStandard: [0001] (C-ndege), yakakodzera kune zvakasiyana-siyana zvekushandisa.
oOptional: Off-axis (4° kana 8° tilt) kuitira kuwedzera epitaxial kukura kwemidziyo.
● Kupfava: Huwandu hwekusiyana kwehukobvu (TTV) ● Hunhu Hwepamusoro:
oPolished to oLow-defect density (<10/cm² micropipe density). 2. Electrical Properties ● Resistivity: > 109 ^ 99 Ω · cm, inochengetwa nekubviswa kwemadopants nemaune.
● Dielectric Strength: High voltage endurance ine zvishoma kurasikirwa kwe dielectric, yakanakira kushandiswa kwepamusoro-simba.
● Thermal Conductivity: 3.5-4.9 W / cm·K, zvichiita kuti kuparara kwekushisa kunobudirira mumagetsi ekushanda kwepamusoro.

3. Thermal uye Mechanical Properties
● Wide Bandgap: 3.26 eV, inotsigira kushanda pasi pemhepo yakakwirira, kupisa kwepamusoro, uye mamiriro emagetsi.
● Kuoma: Mohs chiyero 9, kuvimbisa kusimba kunopesana nemagetsi kupfeka panguva yekugadzirisa.
● Thermal Expansion Coefficient: 4.2×10−6/K4.2 \nguva 10^{-6}/\text{K}4.2×10−6/K, zvichiita kuti dimensional dzigadzikane pasi pekusiyana kwetembiricha.

Parameter	Kugadzira Giredhi	Research Giredhi	Dummy Grade	Unit
Giredhi	Kugadzira Giredhi	Research Giredhi	Dummy Grade
Diameter	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ukobvu	500 ± 25	500 ± 25	500 ± 25	µm
Wafer Orientation	Pa-axis: <0001> ± 0.5°	Pa-axis: <0001> ± 2.0°	Pa-axis: <0001> ± 2.0°	degree
Micropipe Density (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Electrical Resistivity	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Undoped	Undoped	Undoped
Yekutanga Flat Oriental	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	degree
Primary Flat Length	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Secondary Flat Length	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Secondary Flat Orientation	90° CW kubva kupuraimari flat ± 5.0°	90° CW kubva kupuraimari flat ± 5.0°	90° CW kubva kupuraimari flat ± 5.0°	degree
Kusabatanidzwa kumucheto	3	3	3	mm
LTV/TTV/Bow/Warp	3/10 / ±30/40	3/10 / ±30/40	5/15 / ±40/45	µm
Kukasharara Kwepamusoro	Si-chiso: CMP, C-chiso: Yakanatswa	Si-chiso: CMP, C-chiso: Yakanatswa	Si-chiso: CMP, C-chiso: Yakanatswa
Mutswe (High-Intensity Light)	Hapana	Hapana	Hapana
Hex Plates (High-Intensity Chiedza)	Hapana	Hapana	Cumulative area 10%	%
Nzvimbo dzePolytype (Yakakwirira-Kusimba Chiedza)	Cumulative area 5%	Cumulative area 20%	Cumulative area 30%	%
Makwara (High-Intensity Light)	≤ 5 zvikweshwa, kuwedzera kureba ≤ 150	≤ 10 kukwenya, kuwedzera kureba ≤ 200	≤ 10 kukwenya, kuwedzera kureba ≤ 200	mm
Edge Chipping	Hapana ≥ 0.5 mm hupamhi/kudzika	2 inobvumirwa ≤ 1 mm upamhi / kudzika	5 inobvumirwa ≤ 5 mm upamhi / kudzika	mm
Surface Kusvibiswa	Hapana	Hapana	Hapana

Applications

1. Power Electronics
Iyo yakafara bhendi uye yakakwira yekupisa conductivity yeHPSI SiC substrates inoita kuti ive yakanakira zvishandiso zvemagetsi zvinoshanda mumamiriro akanyanya, senge:
● High-Voltage Devices: Kusanganisira MOSFETs, IGBTs, uye Schottky Barrier Diodes (SBDs) yekushandura simba rinoshanda.
● Renewable Energy Systems: Zvakadai sezuva inverters uye mhepo turbine controllers.
●Electric Vehicles (EVs): Inoshandiswa mu inverters, charger, uye powertrain systems kuvandudza kushanda uye kuderedza ukuru.

2. RF uye Microwave Applications
Iyo yakakwirira resistivity uye yakaderera dielectric kurasikirwa kweHPSI wafers yakakosha kune radio-frequency (RF) uye microwave masisitimu, anosanganisira:
●Terecommunication Infrastructure: Zviteshi zvekutanga zve5G network uye satellite communications.
● Aerospace uye Defence: Radar systems, phased-array antennas, uye avionics components.

3. Optoelectronics
Iyo yakajeka uye yakafara bhendi ye4H-SiC inogonesa kushandiswa kwayo mumidziyo yeoptoelectronic, yakadai se:
● UV Photodetectors: Yekutarisa kwezvakatipoteredza uye kuongororwa kwechiremba.
● High-Power LEDs: Kutsigira yakasimba-state lighting systems.
● Laser Diodes: Zvemaindasitiri uye zvekurapa zvikumbiro.

4. Tsvakurudzo uye Kubudirira
HPSI SiC substrates inoshandiswa zvakanyanya muzvidzidzo uye maindasitiri eR&D lab yekuongorora zvemhando yepamusoro zvivakwa uye kugadzirwa kwemidziyo, kusanganisira:
●Epitaxial Layer Growth: Zvidzidzo pamusoro pekuremara kwekuderedza uye kugadzirisa kwekugadzirisa.
● Mutakuri Wekufamba Zvidzidzo: Kuongorora erekitironi uye kutakura gomba mune yakakwirira-kuchena zvinhu.
● Prototyping: Kwekutanga kugadzirwa kwenovel zvishandiso uye maseketi.

Zvakanakira

Superior Quality:
Kuchena kwepamusoro uye kuderera kwehurema kunopa yakavimbika chikuva chepamusoro maapplication.

Thermal Stability:
Yakanakisa kupisa disipation zvivakwa zvinobvumira zvishandiso kushanda zvakanaka pasi pesimba rakakura uye tembiricha mamiriro.

Broad Compatibility:
Maonero aripo uye tsika ukobvu sarudzo inovimbisa kuchinjika kune akasiyana mudziyo zvinodiwa.

Durability:
Kuomarara kwakasarudzika uye kugadzikana kwechimiro kunoderedza kupfeka uye deformation panguva yekugadzirisa nekushanda.

Zvakasiyana-siyana:
Inokodzera kwakasiyana maindasitiri, kubva kune renewable energy kusvika kune aerospace uye telecommunication.

Mhedziso

Iyo 3-inch High Purity Semi-Insulating Silicon Carbide wafer inomiririra iyo yepamusoro ye substrate tekinoroji yepamusoro-simba, yakakwirira-frequency, uye optoelectronic zvishandiso. Kusanganiswa kwayo kweakanakisa kupisa, magetsi, uye michina zvivakwa inovimbisa kuita kwakavimbika munzvimbo dzakaoma. Kubva pamagetsi emagetsi uye maRF masisitimu kune optoelectronics uye yepamusoro R&D, aya HPSI substrates anopa hwaro hwezvitsva zvemangwana.
Kuti uwane rumwe ruzivo kana kuisa odha, ndapota taura nesu. Yedu tekinoroji timu iripo kuti ipe nhungamiro uye sarudzo dzekugadzirisa zvinoenderana nezvido zvako.