3 inch High Purity (Isina Kubviswa) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)

Tsananguro pfupi:

Wafer ye3-inch High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) imhando yepamusoro-soro yakagadzirirwa kushandiswa kwesimba guru, frequency yepamusoro, uye optoelectronic. Yakagadzirwa nezvinhu zvisina kuputswa, 4H-SiC, mawafer aya anoratidza thermal conductivity yakanaka, gap yakafara, uye hunhu hwakanaka hwe semi-insulating, zvichiita kuti ive yakakosha pakugadzirwa kwemidziyo yepamusoro. Nekusimba kwechimiro chepamusoro uye kunaka kwepamusoro, ma substrates eHPSI SiC anoshanda sehwaro hwetekinoroji yechizvarwa chinotevera mumagetsi emagetsi, kutaurirana, uye indasitiri yendege, zvichitsigira hunyanzvi munzvimbo dzakasiyana siyana.


Zvinhu zvirimo

Zvivakwa

1. Hunhu hweMuviri neMaumbirwo
●Rudzi rwezvinhu: Kuchena Kwakanyanya (Kusina Kubviswa) Silicon Carbide (SiC)
●Dhayamita: 3 inches (76.2 mm)
●Kukora: 0.33-0.5 mm, inogona kugadziriswa zvichienderana nezvinodiwa pakushandisa.
●Maumbirwo eKristaro: 4H-SiC polytype ine hexagonal lattice, inozivikanwa nekufamba kwemaerekitironi akawanda uye kugadzikana kwekupisa.
●Kutungamira:
oStandard: [0001] (C-plane), yakakodzera kushandiswa kwakasiyana-siyana.
oSarudzo: Off-axis (4° kana 8° kurereka) kuti zvikwanisike kukura zvakanaka kwezvikamu zvemidziyo.
●Kuti sandara: Kusiyana kweukobvu hwese (TTV) ●Hunhu hwepamusoro:
oYakaporishwa kusvika ku o Kuwanda kwezvisina kukwana (<10/cm² kuwanda kwepombi dzemuchina). 2. Zvimiro zveMagetsi ●Kusimba: >109^99 Ω·cm, kunochengetwa nekubviswa kwezvinhu zvinoshandisa madonhwe.
●Simba reDielectric: Kutsungirira kwemagetsi akawanda nekurasikirwa kushoma kwedielectric, kwakanakira kushandiswa kwemagetsi akawanda.
●Kufambisa kwekupisa: 3.5-4.9 W/cm·K, zvichiita kuti kupisa kuparadzwe zvakanaka mumidziyo inoshanda zvakanyanya.

3. Hunhu hwekupisa uye hwemakanika
●Bandgap Yakafara: 3.26 eV, inotsigira mashandiro ayo pasi pemagetsi akakwira, tembiricha yakakwira, uye mamiriro emwaranzi yakakwira.
●Kuoma: Mohs scale 9, zvichiita kuti irambe yakasimba pakushandiswa kwemakanika panguva yekugadzirisa.
●Kuwedzera kweThermal Coefficient: 4.2×10−6/K4.2 \times 10^{-6}/\text{K}4.2×10−6/K, zvichiita kuti mativi acho agare akadzikama kana tembiricha yachinja.

Paramita

Giredhi reKugadzira

Giredhi reKutsvagisa

Giredhi reDummy

Chikamu

Giredhi Giredhi reKugadzira Giredhi reKutsvagisa Giredhi reDummy  
Dhayamita 76.2 ± 0.5 76.2 ± 0.5 76.2 ± 0.5 mm
Ukobvu 500 ± 25 500 ± 25 500 ± 25 µm
Kudzidziswa kweWafer Zviri padivi: <0001> ± 0.5° Zviri padivi: <0001> ± 2.0° Zviri padivi: <0001> ± 2.0° dhigirii
Kuwanda kweMapombi Madiki (MPD) ≤ 1 ≤ 5 ≤ 10 cm−2^-2−2
Kuramba kweMagetsi ≥ 1E10 ≥ 1E5 ≥ 1E5 Ω·cm
Dopant Yakabviswa Yakabviswa Yakabviswa  
Kutungamira Kwakatsetseka Kwepakutanga {1-100} ± 5.0° {1-100} ± 5.0° {1-100} ± 5.0° dhigirii
Hurefu Hwepamusoro-soro 32.5 ± 3.0 32.5 ± 3.0 32.5 ± 3.0 mm
Kureba Kwechipiri Kwakatsetseka 18.0 ± 2.0 18.0 ± 2.0 18.0 ± 2.0 mm
Kudzidziswa kwechipiri kwakadzikama 90° CW kubva pafurati rekutanga ± 5.0° 90° CW kubva pafurati rekutanga ± 5.0° 90° CW kubva pafurati rekutanga ± 5.0° dhigirii
Kusabatanidzwa kweMupendero 3 3 3 mm
LTV/TTV/Uta/Warp 3 / 10 / ±30 / 40 3 / 10 / ±30 / 40 5 / 15 / ±40 / 45 µm
Kuoma Kwepamusoro Chiso cheSi: CMP, C-chiso: Chakakweshwa Chiso cheSi: CMP, C-chiso: Chakakweshwa Chiso cheSi: CMP, C-chiso: Chakakweshwa  
Matseko (Chiedza Chakasimba) Hapana Hapana Hapana  
Maplate eHex (Chiedza Chine Simba Rakanyanya) Hapana Hapana Nzvimbo yakaunganidzwa 10% %
Nzvimbo dzePolytype (Chiedza Chine Simba Rakanyanya) Nzvimbo yakaunganidzwa 5% Nzvimbo yakaunganidzwa 20% Nzvimbo yakaunganidzwa 30% %
Kukwenya (Chiedza Chakanyanya Kusimba) ≤ kukwenya 5, kureba kwakaunganidzwa ≤ 150 ≤ kukwenya gumi, kureba kwakaunganidzwa ≤ 200 ≤ kukwenya gumi, kureba kwakaunganidzwa ≤ 200 mm
Kucheka kweEdge Hapana ≥ 0.5 mm upamhi/hudzamu 2 yakabvumidzwa ≤ 1 mm upamhi/hudzamu 5 yakabvumidzwa ≤ 5 mm upamhi/hudzamu mm
Kusvibiswa Kwepamusoro Hapana Hapana Hapana  

Mashandisirwo

1. Magetsi Emagetsi Emagetsi
Kureba kwebhandi uye kufambiswa kwepamusoro kwemafuta eHPSI SiC zvinoita kuti zvive zvakanaka kumidziyo yemagetsi inoshanda mumamiriro ezvinhu akaipisisa, akadai se:
●Midziyo Yemagetsi Akanyanya: Inosanganisira MOSFET, IGBTs, uye Schottky Barrier Diodes (SBDs) kuti simba rishande zvakanaka.
●Sisitimu dzeSimba Rinodzoreredzwa: Dzakadai sema solar inverters nema wind turbine controllers.
●Motokari dzemagetsi (EV): Dzinoshandiswa muma inverters, ma charger, uye masisitimu e powertrain kuvandudza mashandiro uye kuderedza saizi.

2. RF uye Microwave Applications
Kusasimba kwakanyanya uye kurasikirwa kwakaderera kwe dielectric kwema HPSI wafers zvakakosha kune radio-frequency (RF) uye microwave systems, zvinosanganisira:
●Nzvimbo dzekukurukurirana: Nzvimbo dzekutanga dzema network e5G uye kutaurirana kwesatellite.
●Nzvimbo dzemuchadenga neDziviriro: Masisitimu eRadar, maantenna ane zvikamu, uye zvikamu zveavionics.

3. Zvemagetsi zveOptoelectronics
Kujeka uye musiyano wakakura we4H-SiC zvinoita kuti ishandiswe muzvishandiso zve optoelectronic, zvakaita se:
●MaUV Photodetectors: Ekutarisa nharaunda uye kuongorora zvirwere.
●Ma LED Ane Simba Rakawanda: Anotsigira masisitimu emwenje akasimba.
●MaDiode eLaser: Ekushandisa mumaindasitiri uye mune zvehutano.

4. Tsvagiridzo neKuvandudza
Zvishandiso zveHPSI SiC zvinoshandiswa zvakanyanya mumarabhoritari eR&D edzidzo nemaindasitiri pakutsvaga hunhu hwepamusoro hwezvinhu uye kugadzirwa kwemidziyo, kusanganisira:
●Kukura kweEpitaxial Layer: Zvidzidzo zvekuderedza zvikanganiso uye kugadzirisa layer.
●Zvidzidzo zveKufamba kweVatakuri: Kuongorora kutakurwa kwemaerekitironi nemaburi muzvinhu zvakachena zvakanyanya.
●Kugadzira maprototypes: Kugadzira kwekutanga kwezvishandiso zvitsva nemasekete.

Zvakanakira

Hunhu Hwepamusoro:
Kuchena kwakanyanya uye huwandu hushoma hwezvirema zvinopa puratifomu yakavimbika yemashandisirwo epamusoro.

Kugadzikana kwekupisa:
Hunhu hwakanaka hwekuparadza kupisa hunoita kuti michina ishande zvakanaka pasi pesimba rakawanda uye mamiriro ekupisa.

Kuenderana Kwakakura:
Magadzirirwo aripo uye sarudzo dzehukobvu dzakagadzirwa dzinoita kuti zvikwanise kugadziriswa zvinoenderana nezvinodiwa zvemudziyo zvakasiyana-siyana.

Kugara kwenguva refu:
Kuomarara kwakanyanya uye kugadzikana kwechimiro kunoderedza kusakara uye kushanduka panguva yekugadzirisa nekushanda.

Kuchinja-chinja:
Yakakodzera maindasitiri akasiyana-siyana, kubva kusimba rinodzokororwa kusvika kumhepo yemuchadenga nekutaurirana.

Mhedziso

Wafer yeSilicon Carbide ine 3-inch High Purity Semi-Insulating inomiririra tekinoroji yepamusoro ye substrate yemidziyo ine simba guru, high-frequency, uye optoelectronic. Kusanganiswa kwayo kwehunhu hwakanaka hwekupisa, magetsi, uye mechanical kunoita kuti pave nekushanda kwakavimbika munzvimbo dzakaoma. Kubva kumagetsi emagetsi neRF systems kusvika ku optoelectronics ne advanced R&D, idzi HPSI substrates dzinopa hwaro hwekuvandudzwa kwemangwana.
Kuti uwane rumwe ruzivo kana kuisa odha, ndapota taura nesu. Chikwata chedu chehunyanzvi chiripo kuti chikupe gwara uye sarudzo dzekugadzirisa dzakagadzirirwa zvaunoda.

Dhayagiramu Yakadzama

SiC Semi-Insulating03
SiC Semi-Insulating02
SiC Semi-Insulating06
SiC Semi-Insulating05

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