2 inch Sic silicon carbide substrate 6H-N Rudzi 0.33mm 0.43mm kaviri-sided polishing Kupisa kwekushisa kwakaderera kushandiswa kwesimba

Tsanangudzo Pfupi

Silicon carbide (SiC) yakakura bhendi gap semiconductor zvinhu zvine yakanakisa yekupisa conductivity uye kugadzikana kwemakemikari. Rudzi rwe6H-N runoratidza kuti chimiro chayo chekristaro chine hexagonal (6H), uye "N" inoratidza kuti iN-type semiconductor material, iyo inowanzoitwa nedoping nitrogen.
Iyo silicon carbide substrate ine hunhu hwakanakisa hwekuremerwa kwepamusoro, kupisa kwekushisa kwepamusoro, kukwirisa frequency kuita, etc. Kuenzaniswa nesilicon zvigadzirwa, mudziyo wakagadzirwa nesilicon substrate unogona kuderedza kurasikirwa ne80% uye kuderedza saizi yemudziyo ne90%. Panyaya yemotokari nyowani dzesimba, silicon carbide inogona kubatsira mota nyowani dzesimba kuwana huremu uye kuderedza kurasikirwa, uye kuwedzera kutyaira; Mundima ye5G yekukurukurirana, inogona kushandiswa pakugadzira michina yakabatana; Mune photovoltaic simba rekugadzira rinogona kuvandudza kushanda kwekushandura; Munda wechitima chekufambisa unogona kushandisa tembiricha yayo yepamusoro uye hunhu hwakanyanya hwekumanikidza.


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Aya anotevera maitiro e2inch silicon carbide wafer

1. Kuoma: Mohs kuoma kunenge 9.2.
2. Crystal chimiro: hexagonal lattice chimiro.
3. High thermal conductivity: thermal conductivity yeSiC yakakwirira zvikuru kupfuura iyo yesilicon, iyo inobatsira pakugadzirisa kupisa kunobudirira.
4. Wide band gap: band gap reSiC rinenge 3.3eV, rakakodzera kutonhora kwepamusoro, kukwirira kwepamusoro uye kushandiswa kwemasimba makuru.
5. Kuparara kwemagetsi emagetsi uye kufamba kwe electron: Kuparara kwepamusoro kwemagetsi emagetsi uye kufamba kwe electron, kwakakodzera kushandiswa kwemagetsi emagetsi akadai seMOSFET uye IGBTs.
6. Kugadzikana kwekemikari uye kushorwa kwemwaranzi: inokodzera nzvimbo dzakaoma dzakadai semhepo uye kudzivirira kwenyika. Yakanakisa makemikari kuramba, asidhi, alkali uye mamwe makemikari zvinonyungudutsa.
7. High mechanical simba: Excellent mechanical simba pasi pekushisa kwepamusoro uye nzvimbo yakakwirira yekumanikidza.
Inogona kushandiswa zvakanyanya musimba repamusoro, yakakwirira frequency uye yakanyanya tembiricha yemagetsi emidziyo, senge ultraviolet photodetectors, photovoltaic inverters, mota yemagetsi PCUs, nezvimwe.

2inch silicon carbide wafer ine akati wandei maapplication.

1.Simba zvemagetsi emagetsi: anoshandiswa kugadzira simba repamusoro-soro MOSFET, IGBT uye mamwe magadzirirwo, anoshandiswa zvakanyanya mukushandura simba uye motokari dzemagetsi.

2.Rf zvishandiso: Mumidziyo yekukurukurirana, SiC inogona kushandiswa mu-high-frequency amplifiers uye RF simba amplifiers.

3.Photoelectric zvishandiso: zvakadai seSIC-based leds, kunyanya mubhuruu uye ultraviolet applications.

4.Sensors: Pamusana pekupisa kwayo kwakanyanya uye kusagadzikana kwemakemikari, SiC substrates inogona kushandiswa kugadzira kupisa kwepamusoro sensors uye mamwe ma sensor applications.

5.Mauto uye aerospace: nekuda kwekudzivirira kwekushisa kwepamusoro uye maitiro emasimba makuru, akakodzera kushandiswa munzvimbo dzakanyanyisa.

Iwo makuru ekushandisa minda ye6H-N mhando 2 "SIC substrate inosanganisira mota nyowani dzesimba, yakakwira voltage transmission uye shanduko zviteshi, zvinhu zvichena, zvitima zvinomhanya, mota, photovoltaic inverter, pulse magetsi uye zvichingodaro.

XKH inogona kugadzirwa nemhando dzakasiyana zvichienderana nezvinodiwa nevatengi. Yakasiyana pamusoro roughness uye polishing marapirwo aripo. Mhando dzakasiyana dzedoping (senge nitrogen doping) dzinotsigirwa. Iyo yakajairwa nguva yekuendesa ndeye 2-4 mavhiki, zvichienderana nekugadzirisa. Shandisa anti-static kurongedza zvinhu uye anti-seismic furo kuve nechokwadi chekuchengetedzwa kweiyo substrate. Yakasiyana-siyana sarudzo dzekutumira dziripo, uye vatengi vanogona kutarisa mamiriro ezvirogi munguva chaiyo kuburikidza nenhamba yekutevera yakapihwa. Ipa rubatsiro rwehunyanzvi uye masevhisi ekubvunza kuti uone kuti vatengi vanogona kugadzirisa matambudziko mukuita kwekushandisa.

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