Wafer Thinning Equipment ye 4 Inch-12 Inch Sapphire/SiC/Si Wafers Processing

Tsanangudzo Pfupi

Wafer Thinning Equipment chishandiso chakakosha mukugadzira semiconductor yekudzikisa wafer ukobvu kuti ukwidze manejimendi ekupisa, kuita kwemagetsi, uye kugona kurongedza. Mudziyo uyu unoshandisa mechanical kugaya, kemikari mechanical polishing (CMP), uye yakaoma/kunyorova etching tekinoroji kuti uwane Ultra-chaiyo ukobvu kutonga (± 0.1 μm) uye kuenderana ne4-12-inch wafers. Masisitimu edu anotsigira C/A-ndege kutariswa uye akagadzirirwa maapplication epamberi senge 3D ICs, zvishandiso zvemagetsi (IGBT/MOSFETs), uye maMEMS sensors.

XKH inopa zvigadziriso zvakazara, zvinosanganisira midziyo yakasarudzika (2-12-inch wafer process), process optimization (defect density <100/cm²), uye kudzidziswa kwehunyanzvi.

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Features

Kushanda Nheyo

Iyo wafer thinning process inoshanda nematanho matatu:
Kukuya Kwakashata: Gumbo redhaimani (grit size 200–500 μm) rinobvisa 50–150 μm yezvinhu pa3000–5000 rpm kukurumidza kuderedza ukobvu.
Kukuya Kwakanaka: Gumbo rakatsetseka (grit size 1–50 μm) rinoderedza ukobvu kusvika pa20–50 μm pa<1 μm/s kuderedza kukuvadzwa kwepasi.
Polishing (CMP): A kemikari-mechanicha slurry inobvisa yakasara kukuvara, kuwana Ra <0.1 nm.

Zvinoenderana Zvinhu

Silicon (Si): Yakajairwa yeCMOS wafers, yakatetepa kusvika 25 μm ye 3D stacking.
Silicon Carbide (SiC): Inoda akasarudzika mavhiri edhaimondi (80% dhaimondi concentration) yekugadzikana kwekupisa.
Sapphire (Al₂O₃): Yakatetepa kusvika pa50 μm yeUV LED maapplication.

Core System Zvikamu

1. Grinding System
Dual-Axis Grinder: Inosanganisa coarse / yakanaka kukuya mupuratifomu imwe chete, ichidzikisa kutenderera nguva ne40%.
Aerostatic Spindle: 0-6000 rpm kumhanya siyana ne <0.5 μm radial runout.

2. Wafer Handling System
Vacuum Chuck: > 50 N inobata simba ne ± 0.1 μm kunyatsomira.
Robotic Arm: Inotakura 4-12-inch wafers pa100 mm/s.

3. Control System
Laser Interferometry: Chaiyo-nguva ukobvu yekutarisa (chisarudzo 0.01 μm).
AI-Inotyairwa Feedforward: Inofanotaura kupfeka kwemavhiri uye inogadzirisa paramita otomatiki.

4. Kutonhodza & Kuchenesa
Ultrasonic Kuchenesa: Inobvisa zvimedu> 0.5 μm ine 99.9% kunyatsoita.
Deionized Mvura: Inotonhorera wafer kusvika <5 ° C pamusoro pe ambient.

Core Zvakanakira

1. Ultra-High Precision: TTV (Total Thickness Variation) <0.5 μm, WTW (Mukati-Wafer Makobvu Kusiyana) <1 μm.

2. Multi-Process Kubatanidzwa: Inobatanidza kukuya, CMP, uye plasma etching mumushini mumwe.

3. Kuenderana kwezvinhu:
Silicon: kuderedzwa kwehukobvu kubva 775 μm kusvika 25 μm.
SiC: Inowana <2 μm TTV yeRF application.
Doped Wafers: Phosphorus-doped InP wafers ane <5% resistivity Drift.

4. Smart Automation: Kubatanidzwa kweMES kunoderedza kukanganisa kwevanhu ne70%.

5. Kushanda Kwesimba: 30% yakaderera simba rekushandisa kuburikidza neregenerative braking.

Key Applications

1. Advanced Packaging
• 3D ICs: Wafer thinning inogonesa kuturikidzana kwakatwasuka kwelogic/memory machipisi (eg, HBM stacks), kuwana 10× yepamusoro bandwidth uye 50% kuderedza kushandiswa kwemagetsi kuchienzaniswa ne2.5D mhinduro. Iyo midziyo inotsigira hybrid bonding uye TSV (Kuburikidza neSilicon Via) kubatanidzwa, yakakosha kune AI/ML processors inoda <10 μm yekubatanidza pitch. Semuyenzaniso, gumi nemaviri-inch wafers akatetepa kusvika 25 μm anobvumira kurongedza 8+ akaturikidzana uchichengeta <1.5% warpage, yakakosha kune mota LiDAR masisitimu.

• Fan-Out Packaging: Nekudzikisa ukobvu hwewafer kusvika pa30 μm, kureba kwekubatanidza kunopfupikiswa ne50%, kuderedza kunonoka kwechiratidzo (<0.2 ps/mm) uye kugonesa 0.4 mm ultra-thin chipsets for mobile SoCs. Maitiro acho anowedzera kushushikana-kudzoreredzwa kukuya algorithms kudzivirira warpage (> 50 μm TTV kutonga), kuve nechokwadi kuvimbika mune yakakwirira-frequency RF zvikumbiro.

2. Power Electronics
• IGBT Modules: Kuonda kusvika ku50 μm kunoderedza kupisa kwekushisa kusvika ku <0.5 ° C/W, zvichiita kuti 1200V SiC MOSFETs ishande pa 200 ° C junction tembiricha. Midziyo yedu inoshandisa akawanda-nhanho kukuya (yakaomarara: 46 μm grit → yakanaka: 4 μm grit) kubvisa kukuvadzwa kwepasi, kuwana> gumi,000 kutenderera kweanopisa bhasikoro kuvimbika. Izvi zvakakosha kune EV inverters, uko 10 μm-yakakora SiC wafers inovandudza switching kumhanya ne30%.
• GaN-on-SiC Power Devices: Wafer kutetepa kusvika ku80 μm kunonatsiridza kufamba kwemaerekitironi (μ > 2000 cm²/V·s) ye650V GaN HEMTs, kuderedza kurasikirwa kwekuita ne18%. Iyo maitiro inoshandisa laser-inobatsirwa dicing, kudzivirira kutsemuka panguva yekutetepa, kuwana <5 μm edge chipping yeRF simba amplifiers.

3. Optoelectronics
• GaN-on-SiC LEDs: 50 μm sapphire substrates inovandudza chiedza chekubudisa chiedza (LEE) kusvika ku85% (vs. 65% ye 150 μm wafers) nekuderedza kutora photon. Midziyo yedu yekupedzisira-yakaderera TTV kutonga (<0.3 μm) inova nechokwadi chekubuda kwe LED mukati me 12-inch wafers, yakakosha kune Micro-LED kuratidza inoda <100nm wavelength kufanana.
• Silicon Photonics: 25μm-yakakora silicon wafers inogonesa 3 dB / cm yakaderera kupararira kurasikirwa mumawaveguides, yakakosha kune 1.6 Tbps transceivers optical. Iyo nzira inobatanidza CMP kutsvedzerera kuderedza kushata kwepamusoro kuRa <0.1 nm, inosimudzira kubatanidza kushanda zvakanaka ne40%.

4. MEMS Sensors
• Accelerometers: 25 μm silicon wafers anobudirira SNR > 85 dB (vs. 75 dB ye 50 μm wafers) nekuwedzera proof-mass displacement senitivity. Yedu mbiri-axis grinding system inotsiva mafambiro ekushushikana, kuve nechokwadi kuti <0.5% senitivity inokukurwa pamusoro -40°C kusvika 125°C. Zvishandiso zvinosanganisira kuona kuparara kwemotokari uye AR/VR kufamba kwekutevera.

• Kuonda kunosvika 40 μm kunogonesa 0–300 kuyera mabhara—ne<0.1% FS hysteresis. Uchishandisa kwenguva pfupi bonding (magirazi anotakura), maitiro anodzivirira kuputsika kwewaferi panguva yekumashure etching, kuwana <1 μm overpressure kushivirira kune maindasitiri IoT sensors.

• Technical Synergy: Midziyo yedu yakapfava inobatanidza kukuya, CMP, uye plasma etching kugadzirisa matambudziko akasiyana-siyana (Si, SiC, Sapphire). Semuenzaniso, GaN-on-SiC inoda kukuya yakasanganiswa (mavhiri ediamond + plasma) kuenzanisa kuomarara uye kuwedzera kwemafuta, nepo MEMS sensors inoda sub-5 nm pamusoro roughness kuburikidza neCMP polishing.

• Impact yeIndasitiri: Nekugonesa mawafer akatetepa, epamusoro-soro, tekinoroji iyi inotyaira zvitsva muAI chips, 5G mmWave modules, nemagetsi anochinjika, ane TTV tolerances <0.1 μm yezviratidziro zvinopetwa uye <0.5 μm yemotokari LiDAR sensors.

XKH's Services

1. Customized Solutions
Scalable Configurations: 4-12-inch kamuri madhizaini ane otomatiki kurodha / kurodha.
Rutsigiro rweDoping: Tsika mabikirwo eEr/Yb-doped makristasi uye InP/GaAs wafers.

2. End-to-End Support
Kuvandudza Maitiro: Yemahara muyedzo unomhanya ne optimization.
Global Training: Tekinoroji workshops gore negore pamusoro pekugadzirisa uye kugadzirisa matambudziko.

3. Multi-Material Processing
SiC: Wafer kutetepa kusvika ku100 μm ine Ra <0.1 nm.
Safire: 50μm ukobvu kune UV laser windows (transmittance> 92%@200 nm).

4. Value-Added Services
Consumable Supply: Diamond mavhiri (2000+ wafers / hupenyu) uye CMP slurries.

Mhedziso

Iyi wafer yekutetepa michina inopa indasitiri inotungamira chaiyo, yakawanda-yezvinhu zvakasiyana-siyana, uye yakangwara otomatiki, zvichiita kuti ive yakakosha pakubatanidzwa kwe3D uye magetsi emagetsi. XKH masevhisi akazara-kubva pakugadzirisa kusvika ku-post-processing-ve nechokwadi chekuti vatengi vanowana mutengo unoshanda uye hunyanzvi hwekuita mukugadzira semiconductor.