Substrate
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InSb wafer 2inch 3inch isina kuvhurwa Ntype P type orientation 111 100 yeInfrared Detectors
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Mawafer eIndium Antimonide (InSb) N type P type Epi ready undoped Te doped kana Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mhando 2inch 3inch 4inch 6inch 8inch
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Safire ingot 3inch 4inch 6inch Monocrystal CZ KY nzira inogadziriswa
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2 inch Sic silicon carbide substrate 6H-N Rudzi 0.33mm 0.43mm kupolisha kwemativi maviri Kupisa kwakanyanya kunoshandisa simba shoma
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GaAs ine simba guru re epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yekurapa ne laser
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GaAs laser epitaxial wafer ine 4 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
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2inch 3inch 4inch InP epitaxial wafer substrate APD light detector ye fiber optic communications kana LiDAR
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Mhete yesafire yakagadzirwa nezvinhu zvesafire zvakagadzirwa nesafire, kuomarara kweMohs kuri pachena uye kunogona kugadziriswa kwe9
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mhete yesafire mhete yesafire yakagadzirwa zvizere kubva kusafire. Zvinhu zvesafire zvakagadzirwa nerabhoritari.
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Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Lenzi yeSapphire Prism Sapphire yakajeka kwazvo Al2O3 BK7 JGS1 JGS2 Material Optical Instrument