2inch 3inch 4inch InP epitaxial wafer substrate APD light detector ye fiber optic communications kana LiDAR

Tsananguro pfupi:

InP epitaxial substrate ndiyo chinhu chikuru chekugadzira APD, kazhinji chinhu che semiconductor chinoiswa pa substrate ne epitaxial growth technology. Zvinhu zvinowanzoshandiswa zvinosanganisira silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), nezvimwewo, zvine hunhu hwakanaka hwe photoelectric. APD photodetector imhando yakakosha ye photodetector inoshandisa avalanche photoelectric effect kusimudzira chiratidzo chekuona. Kana ma photon akaitika paAPD, ma electron-hole pair anogadzirwa. Kukurumidza kwevatakuri ava pasi pesimba remagetsi kunogona kutungamira pakuumbwa kwevatakuri vakawanda, "avalanche effect", iyo inowedzera zvakanyanya output current.
Mawafer epitaxial anorimwa neMOCvD ndiwo anonyanya kushandiswa pakutsvaga maavalanche photodetection diode. Absorção layer yakagadzirwa neU-InGaAs material ine background doping <5E14. Mabasa echikamu ichi anogona kushandisa InP kana InAlAslayer. InP epitaxial substrate ndiyo inonyanya kushandiswa pakugadzira APD, iyo inosarudza mashandiro e optical detector. APD photodetector imhando ye high sensitivity photodetector, iyo inoshandiswa zvakanyanya mukukurukurirana, kunzwa uye kufungidzira.

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Zvinhu zvirimo

Zvinhu zvikuru zveInP laser epitaxial sheet zvinosanganisira

1. Hunhu hwebhandi: InP ine bhandi rakamanikana, iro rakakodzera kuonekwa kwechiedza cheinfrared chine mafungu marefu, kunyanya munzvimbo ine wavelength kubva pa1.3μm kusvika 1.5μm.
2. Kushanda kweOptical: Firimu reInP epitaxial rine kushanda kwakanaka kweOptical, senge simba rechiedza uye kushanda kwequantum yekunze pahurefu hwakasiyana hwemawimbi. Semuenzaniso, pa480 nm, simba rechiedza uye kushanda kwequantum yekunze zviri 11.2% uye 98.8%, zvichiteerana.
3. Kuchinjana kwemutakuri: InP nanoparticles (NPs) inoratidza maitiro ekuora kwe exponential kaviri panguva yekukura kwe epitaxial. Nguva yekuora nekukurumidza inokonzerwa nekuiswa kwemutakuri muInGaAs layer, nepo nguva yekuora zvishoma nezvishoma inoenderana nekubatanidzwa kwemutakuri muInP NPs.
4. Hunhu hwekupisa kwakanyanya: AlGaInAs/InP quantum well material inoshanda zvakanaka pakupisa kwakanyanya, izvo zvinogona kudzivirira kubuda kwemvura uye kuvandudza hunhu hwekupisa kwakanyanya kwelaser.
5. Maitiro ekugadzira: Mapepa eInP epitaxial anowanzo kurimwa pa substrate netekinoroji ye molecular beam epitaxy (MBE) kana metal-organic chemical vapor deposition (MOCVD) kuti awane mafirimu emhando yepamusoro.
Hunhu uhwu hunoita kuti mawafer eInP laser epitaxial ave nekushanda kwakakosha mukukurukurirana kwefiber, kugoverwa kwemakiyi equantum uye kuona kure kwemaziso.

Mashandisirwo makuru emapiritsi eInP laser epitaxial anosanganisira

1. Photonics: MaInP lasers nema detectors anoshandiswa zvakanyanya mu optical communications, data centers, infrared imaging, biometrics, 3D sensing uye LiDAR.

2. Kutaurirana: Zvinhu zveInP zvine basa rakakosha mukubatanidzwa kukuru kwemalaser e-long-wavelength akavakirwa pasilicon, kunyanya mukutaurirana kwefiber.

3. Malaser eInfrared: Mashandisirwo emalaser eInP-based quantum well mu mid-infrared band (akadai se 4-38 microns), kusanganisira gas sensing, exposure explosive uye infrared imaging.

4. Silicon photonics: Kuburikidza netekinoroji yekubatanidza yakasiyana-siyana, InP laser inotamisirwa kune substrate yakavakirwa pasilicon kuti igadzire chikuva chekubatanidza chesilicon optoelectronic chinoshanda mabasa akawanda.

5. Malaser ane simba guru: Zvinhu zveInP zvinoshandiswa kugadzira malaser ane simba guru, akadai seInGaAsP-InP transistor lasers ane wavelength ye 1.5 microns.

XKH inopa mawafer epitaxial eInP akagadzirwa nemaoko ane maumbirwo akasiyana uye ukobvu, achibatanidza mashandisirwo akasiyana-siyana akadai sekutaurirana kwemaziso, masensa, nzvimbo dze4G/5G base, nezvimwewo. Zvigadzirwa zveXKH zvinogadzirwa uchishandisa michina yepamusoro yeMOCVD kuti ive nechokwadi chekuti inoshanda uye yakavimbika. Panyaya yekutakura zvinhu, XKH ine nzira dzakasiyana-siyana dzekunze kwenyika, inogona kubata nhamba yeodha nenzira inochinjika, uye inopa masevhisi akawedzerwa kukosha akadai sekutetepa, kupatsanura, nezvimwewo. Maitiro ekutumira anoshanda anovimbisa kutumirwa panguva uye kusangana nezvinodiwa nevatengi kuti zvive zvemhando yepamusoro uye nguva yekutumira. Mushure mekusvika, vatengi vanogona kuwana rutsigiro rwakakwana rwehunyanzvi uye sevhisi mushure mekutengesa kuti ive nechokwadi chekuti chigadzirwa chinoshandiswa zvakanaka.