Substrate

12 inch SIC substrate silicon carbide prime grade dhayamita 300mm saizi hombe 4H-N Yakakodzera kupisa kwemudziyo une simba guru
Dia300x1.0mmt Ukobvu Sapphire Wafer C-Plane SSP/DSP
HPSI SiC wafer dia: 3inch thickness: 350um ± 25 µm yePower Electronics
8 inch 200mm Sapphire substrate wafer yakatetepa 1SP 2SP 0.5mm 0.75mm
8 inch SiC silicon carbide wafer 4H-N mhando 0.5mm giredhi rekugadzira rekutsvaga giredhi rekugadzira substrate yakagadziriswa yakashongedzwa
Mawafer esapphire ekristaro imwe chete ane 99.999% Dia200mm ukobvu hwe1.0mm 0.75mm
Wafer yeSapphire ye156mm 159mm 6 inch yekutakura C-Plane DSP TTV
C/A/M axis 4 inch sapphire wafers single crystal Al2O3,SSP DSP high hardness sapphire substrate
3inch High pure Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
Chigadzirwa chitsva cheP-type SiC substrate SiC wafer Dia2inch
8inch 200mm Silicon Carbide SiC Wafers 4H-N mhando yekugadzira giredhi 500um ukobvu
2Inch 6H-N Silicon Carbide Substrate Sic Wafer Yakaposhwa Kaviri Yakagadziriswa Conductive Prime Giredhi Mos Giredhi

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