Substrate
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Silicon Carbide SiC Ingot 6inch N mhando Dummy/prime giredhi ukobvu inogona ba customized
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SiC Ingot 4H-N mhando Dummy giredhi 2inch 3inch 4inch 6inch ukobvu:＞10mm
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HPSI SiC wafer dia:3inch ukobvu:350um± 25 µm yeMagetsi Emagetsi
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3inch High kuchena Semi-Insulating (HPSI)SiC wafer 350um Dummy giredhi Prime giredhi
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Sic Substrate Silicon Carbide Wafer 4H-N Rudzi Rwakakwirira Kuoma Kuora Kupokana Prime Giredhi Polishing
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Kaviri Yakakwenenzverwa Conductive Prime Giredhi Mos
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2inch Silicon Carbide Wafer 6H-N Type Prime Giredhi Tsvagiridzo Giredhi Dummy Giredhi 330μm 430μm Hukobvu
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2inch silicon carbide substrate 6H-N kaviri-mativi akakwenenzverwa dhayamita 50.8mm kugadzira giredhi rekutsvaga giredhi
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p-mhando 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-mhando 4H/6H-P 3C-N 4inch ine ukobvu hwe350um Kugadzira giredhi Dummy giredhi
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4H/6H-P 6inch SiC wafer Zero MPD giredhi Kugadzira Giredhi Dummy Giredhi
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P-mhando yeSiC wafer 4H/6H-P 3C-N 6inch kukora 350 μm ine Primary Flat Oientation