4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer yeMOS kana SBD
SiC Substrate SiC Epi-wafer pfupiso
Tinopa huwandu hwakazara hwema "SiC substrates" emhando yepamusoro uye ma "sic wafers" mumhando dzakasiyana-siyana dze "polytypes" uye ma "doping profiles" - anosanganisira 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), uye 6H-P (p-type conductive) - kubva pa4″, 6″, uye 8″ kusvika 12″. Kunze kwe "bare substrates", masevhisi edu ekukura kwe "epi wafer" anowedzera kukosha anopa ma "epitaxial (epi) wafers" ane ukobvu hwakanyatsodzorwa (1–20 µm), doping concentrations, uye defect densities.
Wafer imwe neimwe ye sic uye epi wafer inoongororwa zvakasimba (micropipe density <0.1 cm⁻², surface roughness Ra <0.2 nm) uye full electrical characterization (CV, resistivity mapping) kuti ive nechokwadi chekuti crystal yakafanana uye inoshanda zvakanaka. Ingave ichishandiswa pamagetsi emagetsi, high-frequency RF amplifiers, kana optoelectronic devices (LEDs, photodetectors), SiC substrate yedu uye epi wafer product lines inopa kuvimbika, kugadzikana kwekupisa, uye simba rekupwanyika rinodiwa nekushandiswa kwazvino.
Hunhu hweSiC Substrate 4H-N mhando uye mashandisirwo ayo
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4H-N SiC substrate Polytype (Hexagonal) Maumbirwo
Kureba kwebhandi remagetsi re ~3.26 eV kunoita kuti magetsi ashande zvakanaka uye arambe akasimba kana paine tembiricha yakakwira uye magetsi akawandisa.
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SiC substrateKudhakwa kweN-Type
Kushandiswa kwenitrogen doping kwakanyatsorongwa kunoita kuti huwandu hwemagetsi huve pakati pe1×10¹⁶ kusvika 1×10¹⁹ cm⁻³ uye kufamba kwemaerekitironi patembiricha yemukamuri kusvika ~900 cm²/V·s, zvichideredza kurasikirwa kwemhepo.
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SiC substrateKuramba Kwakakura & Kufanana
Kugona kupokana kuripo kwe0.01–10 Ω·cm uye ukobvu hwewafer hwe350–650 µm ne ±5% yekutsungirira mukushandisa zvinodhaka uye ukobvu—zvakanakira kugadzirwa kwemidziyo ine simba guru.
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SiC substrateKuwanda Kwezvikanganiso Zvakanyanya Kuderera
Kuwanda kwe micropipe < 0.1 cm⁻² uye kuwanda kwe basal-plane dislocation < 500 cm⁻², zvichipa goho re >99% remidziyo uye kuvimbika kwekristaro kwakanyanya.
- SiC substrateKufambisa Kunopisa Kunoshamisa
Kufambisa kwekupisa kusvika ~370 W/m·K kunoita kuti kubviswe kupisa kushande zvakanaka, zvichiwedzera kuvimbika kwemudziyo uye huwandu hwesimba.
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SiC substrateZvikumbiro Zvakanangwa
MaSiC MOSFET, maSchottky diodes, mapower modules neRF devices emagetsi anofambisa mota, ma solar inverters, ma industrial drives, ma traction systems, uye mimwe misika yemagetsi anofambisa mota inoda simba.
Tsanangudzo yeSiC wafer yemhando ye6inch 4H-N | ||
| Pfuma | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Giredhi | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Dhayamita | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Kudzidziswa kweWafer | Kurembera kwekunze: 4.0° kuenda ku <1120> ± 0.5° | Kurembera kwekunze: 4.0° kuenda ku <1120> ± 0.5° |
| Kuwanda kwepombi dze micropombi | ≤ 0.2 cm² | ≤ 15 cm² |
| Kuramba | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Kutungamira Kwakatsetseka Kwepakutanga | [10-10] ± 50° | [10-10] ± 50° |
| Hurefu Hwepamusoro-soro | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Kusabatanidzwa kweMupendero | 3 mm | 3 mm |
| LTV/TIV / Uta / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Kuomarara | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mipata yemucheto nechiedza chakasimba | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm |
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 0.1% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 3% |
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 5% |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Kureba kwakawedzerwa ≤ dhayamita imwe chete yewafer | |
| Edge Chips Nechiedza Chakanyanya Kusimba | Hapana chinotenderwa ≥ 0.2 mm upamhi uye kudzika | 7 dzinobvumidzwa, ≤ 1 mm imwe neimwe |
| Kubviswa kweSkuruu Yekutambisa Threading | < 500 cm³ | < 500 cm³ |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | ||
| Kurongedza | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete |
Tsanangudzo yeSiC wafer yemhando ye8inch 4H-N | ||
| Pfuma | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Giredhi | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Dhayamita | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Kudzidziswa kweWafer | 4.0° kuenda ku <110> ± 0.5° | 4.0° kuenda ku <110> ± 0.5° |
| Kuwanda kwepombi dze micropombi | ≤ 0.2 cm² | ≤ 5 cm² |
| Kuramba | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Maitiro Akanaka | ||
| Kusabatanidzwa kweMupendero | 3 mm | 3 mm |
| LTV/TIV / Uta / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Kuomarara | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mipata yemucheto nechiedza chakasimba | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm |
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 0.1% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 3% |
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 5% |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Kureba kwakawedzerwa ≤ dhayamita imwe chete yewafer | |
| Edge Chips Nechiedza Chakanyanya Kusimba | Hapana chinotenderwa ≥ 0.2 mm upamhi uye kudzika | 7 dzinobvumidzwa, ≤ 1 mm imwe neimwe |
| Kubviswa kweSkuruu Yekutambisa Threading | < 500 cm³ | < 500 cm³ |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | ||
| Kurongedza | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete |
4H-SiC chinhu chinoshanda zvakanyanya chinoshandiswa pamagetsi emagetsi, zvishandiso zveRF, uye mashandisirwo ekupisa kwakanyanya. "4H" inoreva chimiro chekristaro, chine hexagonal, uye "N" inoratidza rudzi rwekushandisa zvinodhaka zvinoshandiswa kugadzirisa mashandiro echinhu chacho.
Iyo4H-SiCmhando yechinhu chinowanzoshandiswa kune:
Magetsi Emagetsi:Inoshandiswa mumidziyo yakaita semadiode, maMOSFET, uye maIGBT emagetsi emotokari, michina yemaindasitiri, uye masisitimu esimba rinogona kudzokororwa.
Tekinoroji ye5G:Nekuda kwe5G kwezvikamu zvinoshandisa mafrequency akawanda uye zvinobudirira zvakanyanya, kugona kweSiC kubata mavoltage akakwira uye kushanda pakupisa kwakanyanya kunoita kuti ive yakakodzera maamplifiers emagetsi ebase station nemidziyo yeRF.
Masisitimu eSimba reZuva:Hunhu hwakanaka hweSiC hwekubata magetsi hwakanakira ma inverter nema converter e photovoltaic (simba rezuva).
Mota dzemagetsi (mota dzemagetsi):SiC inoshandiswa zvakanyanya mumagetsi emagetsi emagetsi (EV powertrains) pakushandura simba zviri nani, kuderedza kupisa, uye kuwanda kwesimba.
Hunhu hweSiC Substrate 4H Semi-Insulating uye mashandisirwo ayo
Zvivakwa:
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Maitiro ekudzora huwandu hwevanhu vasina mapombi: Inovimbisa kusavapo kwema micropipes, zvichivandudza kunaka kwe substrate.
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Maitiro ekudzora emonocrystalline: Inovimbisa chimiro chimwe chete chekristaro chehunhu hwezvinhu zviri nani.
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Maitiro ekudzora zvinhu zvinosanganisirwa: Inoderedza kuvapo kwetsvina kana zvinhu zvinosanganisirwa, zvichiita kuti pave nesubstrate yakachena.
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Maitiro ekudzora kusasimba: Inobvumira kudzora kwakarurama kwekudzivirira kwemagetsi, izvo zvakakosha pakushanda kwemuchina.
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Maitiro ekudzora nekudzora kusachena: Inodzora uye inoderedza kusviba kwetsvina kuti ichengetedze kusimba kwe substrate.
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Maitiro ekudzora upamhi hwematanho e substrate: Inopa kutonga kwakarurama pamusoro pehupamhi hwematanho, ichivimbisa kuenderana kwenzvimbo yacho yese
Tsanangudzo ye substrate ye6Inch 4H-semi SiC | ||
| Pfuma | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Dhayamita (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu (um) | 500 ± 15 | 500 ± 25 |
| Kudzidziswa kweWafer | Padivi: ±0.0001° | Padivi: ±0.05° |
| Kuwanda kwepombi dze micropombi | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Kuramba (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Kutungamira Kwakatsetseka Kwepakutanga | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Hurefu Hwepamusoro-soro | Notch | Notch |
| Kusabatanidzwa kweMupendero (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Bowl / Warp | ≤ 3 µm | ≤ 3 µm |
| Kuomarara | Polish Ra ≤ 1.5 µm | Polish Ra ≤ 1.5 µm |
| Edge Chips Nechiedza Chakanyanya Kusimba | ≤ 20 µm | ≤ 60 µm |
| Maplate ekupisa nechiedza chakasimba | Kuunganidzwa ≤ 0.05% | Kuunganidzwa ≤ 3% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Kubatanidzwa kweKabhoni Inoonekwa ≤ 0.05% | Kuunganidzwa ≤ 3% |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | ≤ 0.05% | Kuunganidzwa ≤ 4% |
| Edge Chips Nechiedza Chakanyanya Kusimba (Saizi) | Hazvibvumirwi > 02 mm Upamhi uye Kudzika | Hazvibvumirwi > 02 mm Upamhi uye Kudzika |
| Kubatsira Kukura Kwesikuruu | ≤ 500 µm | ≤ 500 µm |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Kurongedza | Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete | Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete |
4-Inch 4H-Semi Insulating SiC Substrate Tsanangudzo
| Paramita | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
|---|---|---|
| Zvimiro zvemuviri | ||
| Dhayamita | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Kudzidziswa kweWafer | Padivi: <600h > 0.5° | Padivi: <000h > 0.5° |
| Zvivakwa zveMagetsi | ||
| Kuwanda kweMapombi Madiki (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Kuramba | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Kushivirira kweJomethri | ||
| Kutungamira Kwakatsetseka Kwepakutanga | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Hurefu Hwepamusoro-soro | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Kureba Kwechipiri Kwakatsetseka | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Kudzidziswa kwechipiri kwakadzikama | 90° CW kubva kuPrime flat ± 5.0° (Si yakatarisa mudenga) | 90° CW kubva kuPrime flat ± 5.0° (Si yakatarisa mudenga) |
| Kusabatanidzwa kweMupendero | 3 mm | 3 mm |
| LTV / TTV / Uta / Kukombama | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Hunhu hwepamusoro | ||
| Kuoma Kwepamusoro (Polish Ra) | ≤1 nm | ≤1 nm |
| Kuoma Kwepamusoro (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Mipata yeEdge (Chiedza Chakasimba) | Hazvibvumidzwe | Kureba kwakawedzerwa ≥10 mm, mutswe mumwe chete ≤2 mm |
| Zvikanganiso zveHexagonal Plate | ≤0.05% nzvimbo yakaunganidzwa | ≤0.1% nzvimbo yakaunganidzwa |
| Nzvimbo dzeKubatanidzwa kwePolytype | Hazvibvumidzwe | ≤1% nzvimbo yakaunganidzwa |
| Kubatanidzwa kweKabhoni Inoonekwa | ≤0.05% nzvimbo yakaunganidzwa | ≤1% nzvimbo yakaunganidzwa |
| Kukwenya kweSilicon pamusoro | Hazvibvumidzwe | ≤1 dhayamita yewafer yakaunganidzwa kureba |
| Machipisi emucheto | Hapana chinotenderwa (≥0.2 mm upamhi/hudzamu) | ≤5 machipisi (imwe neimwe ≤1 mm) |
| Kusvibiswa kweSilicon pamusoro | Hazvina kutaurwa | Hazvina kutaurwa |
| Kurongedza | ||
| Kurongedza | Kaseti ine wafer yakawanda kana mudziyo wewafer imwe chete | Kaseti yewafer yakawanda kana |
Kushandiswa:
IyoZvigadziko zveSiC 4H zvinodzivirira kupisaanonyanya kushandiswa mumidziyo yemagetsi ine simba guru uye ine mafrequency akawanda, kunyanya muMunda weRF. Ma substrates aya akakosha pakushandiswa kwakasiyana-siyana kunosanganisiramasisitimu ekutaurirana mu microwave, radar yemhando yepamusorouyemichina yekuona magetsi isina wayaKufambiswa kwadzo kwemhepo inopisa zvakanyanya uye hunhu hwadzo hwemagetsi hwakanaka zvinoita kuti dzive dzakakodzera kushandiswa kwakasimba mumagetsi emagetsi uye masisitimu ekutaurirana.
Hunhu hweSiC epi wafer 4H-N mhando uye mashandisirwo ayo
Zvimiro uye Mashandisirwo eSiC 4H-N Type Epi Wafer
Hunhu hweSiC 4H-N Type Epi Wafer:
Kuumbwa Kwezvinhu:
SiC (Silicon Carbide): Inozivikanwa nekuoma kwayo kukuru, kupisa kwakanyanya, uye hunhu hwakanaka hwemagetsi, SiC yakakodzera michina yemagetsi inoshanda zvakanyanya.
4H-SiC Polytype: Iyo 4H-SiC polytype inozivikanwa nekushanda kwayo kwepamusoro uye kugadzikana kwayo mumashandisirwo emagetsi.
Kudhakwa kwemhando yeN: Kuisa nitrogen mumhando yeN (yakaiswa nitrogen) kunoita kuti maerekitironi afambe zvakanaka, zvichiita kuti SiC ive yakakodzera kushandiswa kwema frequency akawanda uye nesimba guru.
Kufambisa Kwekupisa Kwakanyanya:
Mawafer eSiC ane mafambiro ekupisa epamusoro, anowanzo tangira pa120–200 W/m·K, zvichivabvumira kudzora kupisa zvinobudirira mumidziyo ine simba guru senge ma transistors nema diode.
Bandgap Yakafara:
Nekuvharwa kwe3.26 eV, 4H-SiC inogona kushanda pamagetsi, mafrequency, uye tembiricha yakakwira zvichienzaniswa nemidziyo yechinyakare yakagadzirwa nesilicon, zvichiita kuti ive yakakodzera kushandiswa kwepamusoro-soro uye inoshanda zvakanyanya.
Zvivakwa zveMagetsi:
Kufamba kwemaerekitironi akawanda eSiC uye kufambisa simba kunoita kuti ive yakanaka kunemagetsi emagetsi, zvichipa kumhanya kwekuchinja nekukurumidza uye kugona kubata magetsi nemagetsi zvakanyanya, zvichikonzera masisitimu ekutonga magetsi anoshanda zviri nani.
Kuramba kweMichina neMakemikari:
SiC chimwe chezvinhu zvakaoma zvikuru, chiri chechipiri kune dhaimani, uye hachina kuoxidation uye ngura, zvichiita kuti igare kwenguva refu munzvimbo dzakaoma.
Mashandisirwo eSiC 4H-N Type Epi Wafer:
Magetsi Emagetsi:
Mawafer epi emhando yeSiC 4H-N anoshandiswa zvakanyanya musimba reMOSFET, IGBTsuyemadiodeyekushandurwa kwesimbamumasisitimu akadai sema inverter ezuva, mota dzemagetsiuyemasisitimu ekuchengetera simba, zvichipa kushanda kwakawedzerwa uye kushanda zvakanaka kwesimba.
Mota dzemagetsi (mota dzemagetsi):
In mota dzemagetsi, vanodzora motauyenzvimbo dzekuchaja, mawafer eSiC anobatsira kuti bhatiri rishande zvakanaka, kuchaja nekukurumidza, uye kuvandudza mashandiro esimba nekuda kwekugona kwawo kubata simba rakawanda uye tembiricha.
Masisitimu Esimba Rinodzokororwa:
MaInverters Ezuva: Mawafer eSiC anoshandiswa mumasisitimu esimba rezuvayekushandura simba reDC kubva kuma solar panels kuenda ku AC, zvichiwedzera kushanda zvakanaka kwehurongwa hwese uye mashandiro ahwo.
Maturbine emhepo: Tekinoroji yeSiC inoshandiswa mumasisitimu ekudzora turbine yemhepo, kugadzirisa kugadzirwa kwemagetsi uye kushanda zvakanaka kwekushandura magetsi.
Ndege neDziviriro:
Mawafer eSiC akakodzera kushandiswa muzvemagetsi zvemuchadengauyemafomu echiuto, kusanganisiramasisitimu eradaruyezvemagetsi zvesaiti, uko kuramba mwaranzi yakawanda uye kugadzikana kwekupisa kwakakosha.
Mashandisirwo Ekupisa Kwakanyanya uye Kuwanda Kwazvo:
Mawafer eSiC anobudirira zvikuruzvigadzirwa zvemagetsi zvinopisa zvakanyanya, inoshandiswa mumainjini endege, chitundumuseremusereuyemasisitimu ekudziyisa eindasitiri, sezvo dzichiramba dzichishanda zvakanaka mumamiriro ekupisa kwakanyanya. Pamusoro pezvo, gap yavo yakakura inobvumira kushandiswa mumashandisirwo anoitwa kakawandaseMidziyo yeRFuyekutaurirana mu microwave.
| Tsanangudzo ye6-inch N-type epit axial | |||
| Paramita | chikwata | Z-MOS | |
| Rudzi | Kufambisa / Dopant | - | N-rudzi / Nitrogen |
| Rutivi rweBuffer | Ukobvu hweBuffer Layer | um | 1 |
| Kushivirira Ukobvu hweBuffer Layer | % | ±20% | |
| Kuwanda kweBuffer Layer | cm-3 | 1.00E+18 | |
| Kushivirira Kuomerera Kwechikamu Chebuffer | % | ±20% | |
| Chinyorwa chekutanga cheEpi | Ukobvu hweEpi Layer | um | 11.5 |
| Kuenzana kweKukora kweEpi Layer | % | ±4% | |
| Kushivirira kweEpi Layers Ukobvu ((Spec-) Max ，Min)/Spec) | % | ±5% | |
| Kuwanda kweEpi Layer | cm-3 | 1E 15~ 1E 18 | |
| Kushivirira Kuomerera kweEpi Layer | % | 6% | |
| Kufanana kweEpi Layer Concentration (σ) /pakati) | % | ≤5% | |
| Kufanana kweEpi Layer Concentration <(min-yakanyanya)/(min+yakanyanya> | % | ≤ 10% | |
| Chimiro cheWafer yeEpitaixal | uta | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Hunhu Hwakajairika | Kureba kwekukwenya | mm | ≤30mm |
| Machipisi emucheto | - | HAPANA | |
| Tsanangudzo yezvikanganiso | ≥97% （Yakayerwa ne 2*2， Zvikanganiso zvemhondi zvinosanganisira: Zvikanganiso zvinosanganisira Makomba madiki/Makomba makuru, Karoti, Triangular | ||
| Kusvibiswa kwesimbi | maatomu/cm² | d f f ll i ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pasuru | Zvimiro zvekurongedza | midziyo/bhokisi | kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer |
| Tsanangudzo ye epitaxial ye 8-inch N-type | |||
| Paramita | chikwata | Z-MOS | |
| Rudzi | Kufambisa / Dopant | - | N-rudzi / Nitrogen |
| Rutivi rwebhafa | Ukobvu hweBuffer Layer | um | 1 |
| Kushivirira Ukobvu hweBuffer Layer | % | ±20% | |
| Kuwanda kweBuffer Layer | cm-3 | 1.00E+18 | |
| Kushivirira Kuomerera Kwechikamu Chebuffer | % | ±20% | |
| Chinyorwa chekutanga cheEpi | Avhareji yeukobvu hweEpi Layers | um | 8~ 12 |
| Ukobvu hweEpi Layers Kufanana (σ/avhareji) | % | ≤2.0 | |
| Epi Layers Ukobvu Tolerance ((Spec -Max, Min)/Spec) | % | ±6 | |
| Avhareji yeAvhareji yeEpi Layers | cm-3 | 8E+15 ~2E+16 | |
| Epi Layers Net Doping Kufanana (σ/avhareji) | % | ≤5 | |
| Epi Layers Net DopingTolerance((Spec -Max， | % | ± 10.0 | |
| Chimiro cheWafer yeEpitaixal | Mi )/S ) Kukombama | um | ≤50.0 |
| uta | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm×10mm) | |
| Mukuru Hunhu | Kukwenya | - | Kureba kwakawedzerwa≤ 1/2 dhayamita yewafer |
| Machipisi emucheto | - | ≤2 machipisi, Radius imwe neimwe ≤1.5mm | |
| Kusvibiswa kweSimbi Dzepamusoro | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Kuongorora Zvikanganiso Zvakakwana | % | ≥ 96.0 (Zvikanganiso zve2X2 zvinosanganisira Micropipe / Makomba Makuru, Karoti, Zvikanganiso zveTsamba nhatu, Kudonha, Linear/IGSF-s, BPD) | |
| Kusvibiswa kweSimbi Dzepamusoro | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pasuru | Zvimiro zvekurongedza | - | kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer |
Mibvunzo neMhinduro zveSiC wafer
Mubvunzo wekutanga: Ndezvipi zvakanakira kushandisa mawafer eSiC pane mawafer echinyakare esilicon mumagetsi ane simba?
A1:
Mawafer eSiC ane mabhenefiti akawanda akakosha pane mawafer echinyakare esilicon (Si) mumagetsi emagetsi, anosanganisira:
Kushanda Kwakanyanya: SiC ine bandgap yakakura (3.26 eV) kana tichienzanisa nesilicon (1.1 eV), zvichibvumira michina kushanda pamagetsi akakwira, mafrequency, uye tembiricha. Izvi zvinotungamira pakurasikirwa kwesimba rakaderera uye kushanda zvakanaka mumasisitimu ekushandura simba.
Kufambisa Kwekupisa Kwakanyanya: Kufambiswa kwekupisa kweSiC kwakakwira zvikuru kupfuura kwesilicon, zvichiita kuti kupisa kuparadzike zviri nani mumashandisirwo ane simba guru, izvo zvinovandudza kuvimbika uye hupenyu hwemidziyo yemagetsi.
Kubata Kwemagetsi Akakwira uye Kubata Kwemazuva Ano: Midziyo yeSiC inogona kubata voltage yakakwira uye mazinga emagetsi, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi ane simba guru senge mota dzemagetsi, masisitimu esimba rinogona kudzokororwa, uye madhiraivha emota dzemaindasitiri.
Kukurumidza Kuchinja Kumhanya: Midziyo yeSiC ine kugona kukurumidzira kushandura, izvo zvinobatsira kuderedza kurasikirwa kwesimba uye saizi yesystem, zvichiita kuti ive yakakodzera kushandiswa kwema "high-frequency".
Mubvunzo wechipiri: Ndeapi mashandisirwo makuru eSiC wafers muindasitiri yemotokari?
A2:
Muindasitiri yemotokari, mawafer eSiC anonyanya kushandiswa mu:
Mota dzemagetsi (EV): Zvikamu zveSiC zvakaita sema inverteruyesimba reMOSFETkuvandudza mashandiro uye kushanda zvakanaka kwemagetsi emotokari dzemagetsi nekuita kuti kuchinjana kumhanye nekukurumidza uye kuwanda kwesimba remagetsi. Izvi zvinoita kuti bhatiri rigare kwenguva refu uye kushanda zvakanaka kwemotokari.
Machaja Ari Muchikepe: Midziyo yeSiC inobatsira kuvandudza mashandiro ehurongwa hwekuchaja huri mundege nekugonesa nguva yekuchaja nekukurumidza uye manejimendi yekupisa iri nani, izvo zvakakosha kuti maEV atsigire nzvimbo dzekuchaja dzine simba guru.
Masisitimu Ekutarisira Mabhatiri (BMS): Tekinoroji yeSiC inovandudza mashandiro emasisitimu ekugadzirisa mabhatiri, zvichiita kuti magetsi adzorwe zviri nani, simba rishande zvakanaka, uye bhatiri rigare kwenguva refu.
Vashanduri veDC-DC: Mawafer eSiC anoshandiswa muVashanduri veDC-DCkushandura simba reDC rine simba guru kuita simba reDC rine simba shoma zvinobudirira, izvo zvakakosha mumotokari dzemagetsi kuti dzikwanise kudzora simba kubva kubhatiri kuenda kuzvikamu zvakasiyana-siyana mumotokari.
Kushanda zvakanaka kweSiC mukushandisa magetsi ane simba guru, tembiricha yepamusoro, uye kushanda zvakanaka kunoita kuti zvive zvakakosha kuti indasitiri yemotokari ishandukire kuenda kumagetsi.
Tsanangudzo yeSiC wafer yemhando ye6inch 4H-N | ||
| Pfuma | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Giredhi | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Dhayamita | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Kudzidziswa kweWafer | Kurembera kwekunze: 4.0° kuenda ku <1120> ± 0.5° | Kurembera kwekunze: 4.0° kuenda ku <1120> ± 0.5° |
| Kuwanda kwepombi dze micropombi | ≤ 0.2 cm² | ≤ 15 cm² |
| Kuramba | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Kutungamira Kwakatsetseka Kwepakutanga | [10-10] ± 50° | [10-10] ± 50° |
| Hurefu Hwepamusoro-soro | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Kusabatanidzwa kweMupendero | 3 mm | 3 mm |
| LTV/TIV / Uta / Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Kuomarara | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mipata yemucheto nechiedza chakasimba | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm |
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 0.1% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 3% |
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 5% |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Kureba kwakawedzerwa ≤ dhayamita imwe chete yewafer | |
| Edge Chips Nechiedza Chakanyanya Kusimba | Hapana chinotenderwa ≥ 0.2 mm upamhi uye kudzika | 7 dzinobvumidzwa, ≤ 1 mm imwe neimwe |
| Kubviswa kweSkuruu Yekutambisa Threading | < 500 cm³ | < 500 cm³ |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | ||
| Kurongedza | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete |
Tsanangudzo yeSiC wafer yemhando ye8inch 4H-N | ||
| Pfuma | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Giredhi | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Dhayamita | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Kudzidziswa kweWafer | 4.0° kuenda ku <110> ± 0.5° | 4.0° kuenda ku <110> ± 0.5° |
| Kuwanda kwepombi dze micropombi | ≤ 0.2 cm² | ≤ 5 cm² |
| Kuramba | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Maitiro Akanaka | ||
| Kusabatanidzwa kweMupendero | 3 mm | 3 mm |
| LTV/TIV / Uta / Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Kuomarara | Polish Ra ≤ 1 nm | Polish Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mipata yemucheto nechiedza chakasimba | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm | Kureba kwakaunganidzwa ≤ 20 mm kureba kumwe chete ≤ 2 mm |
| Hex Plates Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 0.1% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 3% |
| Kubatanidzwa kweKabhoni Inoonekwa | Nzvimbo yakaunganidzwa ≤ 0.05% | Nzvimbo yakaunganidzwa ≤ 5% |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | Kureba kwakawedzerwa ≤ dhayamita imwe chete yewafer | |
| Edge Chips Nechiedza Chakanyanya Kusimba | Hapana chinotenderwa ≥ 0.2 mm upamhi uye kudzika | 7 dzinobvumidzwa, ≤ 1 mm imwe neimwe |
| Kubviswa kweSkuruu Yekutambisa Threading | < 500 cm³ | < 500 cm³ |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | ||
| Kurongedza | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete | Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete |
Tsanangudzo ye substrate ye6Inch 4H-semi SiC | ||
| Pfuma | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
| Dhayamita (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu (um) | 500 ± 15 | 500 ± 25 |
| Kudzidziswa kweWafer | Padivi: ±0.0001° | Padivi: ±0.05° |
| Kuwanda kwepombi dze micropombi | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Kuramba (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Kutungamira Kwakatsetseka Kwepakutanga | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Hurefu Hwepamusoro-soro | Notch | Notch |
| Kusabatanidzwa kweMupendero (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Bowl / Warp | ≤ 3 µm | ≤ 3 µm |
| Kuomarara | Polish Ra ≤ 1.5 µm | Polish Ra ≤ 1.5 µm |
| Edge Chips Nechiedza Chakanyanya Kusimba | ≤ 20 µm | ≤ 60 µm |
| Maplate ekupisa nechiedza chakasimba | Kuunganidzwa ≤ 0.05% | Kuunganidzwa ≤ 3% |
| Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba | Kubatanidzwa kweKabhoni Inoonekwa ≤ 0.05% | Kuunganidzwa ≤ 3% |
| Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba | ≤ 0.05% | Kuunganidzwa ≤ 4% |
| Edge Chips Nechiedza Chakanyanya Kusimba (Saizi) | Hazvibvumirwi > 02 mm Upamhi uye Kudzika | Hazvibvumirwi > 02 mm Upamhi uye Kudzika |
| Kubatsira Kukura Kwesikuruu | ≤ 500 µm | ≤ 500 µm |
| Kusvibiswa kweSilicon pamusoro neHigh Intensity Light | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Kurongedza | Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete | Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete |
4-Inch 4H-Semi Insulating SiC Substrate Tsanangudzo
| Paramita | Giredhi reKugadzirwa kweMPD Zero (Giredhi Z) | Giredhi reDummy (Giredhi D) |
|---|---|---|
| Zvimiro zvemuviri | ||
| Dhayamita | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Mhando yePoly | 4H | 4H |
| Ukobvu | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Kudzidziswa kweWafer | Padivi: <600h > 0.5° | Padivi: <000h > 0.5° |
| Zvivakwa zveMagetsi | ||
| Kuwanda kweMapombi Madiki (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Kuramba | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Kushivirira kweJomethri | ||
| Kutungamira Kwakatsetseka Kwepakutanga | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Hurefu Hwepamusoro-soro | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Kureba Kwechipiri Kwakatsetseka | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Kudzidziswa kwechipiri kwakadzikama | 90° CW kubva kuPrime flat ± 5.0° (Si yakatarisa mudenga) | 90° CW kubva kuPrime flat ± 5.0° (Si yakatarisa mudenga) |
| Kusabatanidzwa kweMupendero | 3 mm | 3 mm |
| LTV / TTV / Uta / Kukombama | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Hunhu hwepamusoro | ||
| Kuoma Kwepamusoro (Polish Ra) | ≤1 nm | ≤1 nm |
| Kuoma Kwepamusoro (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Mipata yeEdge (Chiedza Chakasimba) | Hazvibvumidzwe | Kureba kwakawedzerwa ≥10 mm, mutswe mumwe chete ≤2 mm |
| Zvikanganiso zveHexagonal Plate | ≤0.05% nzvimbo yakaunganidzwa | ≤0.1% nzvimbo yakaunganidzwa |
| Nzvimbo dzeKubatanidzwa kwePolytype | Hazvibvumidzwe | ≤1% nzvimbo yakaunganidzwa |
| Kubatanidzwa kweKabhoni Inoonekwa | ≤0.05% nzvimbo yakaunganidzwa | ≤1% nzvimbo yakaunganidzwa |
| Kukwenya kweSilicon pamusoro | Hazvibvumidzwe | ≤1 dhayamita yewafer yakaunganidzwa kureba |
| Machipisi emucheto | Hapana chinotenderwa (≥0.2 mm upamhi/hudzamu) | ≤5 machipisi (imwe neimwe ≤1 mm) |
| Kusvibiswa kweSilicon pamusoro | Hazvina kutaurwa | Hazvina kutaurwa |
| Kurongedza | ||
| Kurongedza | Kaseti ine wafer yakawanda kana mudziyo wewafer imwe chete | Kaseti yewafer yakawanda kana |
| Tsanangudzo ye6-inch N-type epit axial | |||
| Paramita | chikwata | Z-MOS | |
| Rudzi | Kufambisa / Dopant | - | N-rudzi / Nitrogen |
| Rutivi rweBuffer | Ukobvu hweBuffer Layer | um | 1 |
| Kushivirira Ukobvu hweBuffer Layer | % | ±20% | |
| Kuwanda kweBuffer Layer | cm-3 | 1.00E+18 | |
| Kushivirira Kuomerera Kwechikamu Chebuffer | % | ±20% | |
| Chinyorwa chekutanga cheEpi | Ukobvu hweEpi Layer | um | 11.5 |
| Kuenzana kweKukora kweEpi Layer | % | ±4% | |
| Kushivirira kweEpi Layers Ukobvu ((Spec-) Max ，Min)/Spec) | % | ±5% | |
| Kuwanda kweEpi Layer | cm-3 | 1E 15~ 1E 18 | |
| Kushivirira Kuomerera kweEpi Layer | % | 6% | |
| Kufanana kweEpi Layer Concentration (σ) /pakati) | % | ≤5% | |
| Kufanana kweEpi Layer Concentration <(min-yakanyanya)/(min+yakanyanya> | % | ≤ 10% | |
| Chimiro cheWafer yeEpitaixal | uta | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Hunhu Hwakajairika | Kureba kwekukwenya | mm | ≤30mm |
| Machipisi emucheto | - | HAPANA | |
| Tsanangudzo yezvikanganiso | ≥97% （Yakayerwa ne 2*2， Zvikanganiso zvemhondi zvinosanganisira: Zvikanganiso zvinosanganisira Makomba madiki/Makomba makuru, Karoti, Triangular | ||
| Kusvibiswa kwesimbi | maatomu/cm² | d f f ll i ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pasuru | Zvimiro zvekurongedza | midziyo/bhokisi | kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer |
| Tsanangudzo ye epitaxial ye 8-inch N-type | |||
| Paramita | chikwata | Z-MOS | |
| Rudzi | Kufambisa / Dopant | - | N-rudzi / Nitrogen |
| Rutivi rwebhafa | Ukobvu hweBuffer Layer | um | 1 |
| Kushivirira Ukobvu hweBuffer Layer | % | ±20% | |
| Kuwanda kweBuffer Layer | cm-3 | 1.00E+18 | |
| Kushivirira Kuomerera Kwechikamu Chebuffer | % | ±20% | |
| Chinyorwa chekutanga cheEpi | Avhareji yeukobvu hweEpi Layers | um | 8~ 12 |
| Ukobvu hweEpi Layers Kufanana (σ/avhareji) | % | ≤2.0 | |
| Epi Layers Ukobvu Tolerance ((Spec -Max, Min)/Spec) | % | ±6 | |
| Avhareji yeAvhareji yeEpi Layers | cm-3 | 8E+15 ~2E+16 | |
| Epi Layers Net Doping Kufanana (σ/avhareji) | % | ≤5 | |
| Epi Layers Net DopingTolerance((Spec -Max， | % | ± 10.0 | |
| Chimiro cheWafer yeEpitaixal | Mi )/S ) Kukombama | um | ≤50.0 |
| uta | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm×10mm) | |
| Mukuru Hunhu | Kukwenya | - | Kureba kwakawedzerwa≤ 1/2 dhayamita yewafer |
| Machipisi emucheto | - | ≤2 machipisi, Radius imwe neimwe ≤1.5mm | |
| Kusvibiswa kweSimbi Dzepamusoro | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Kuongorora Zvikanganiso Zvakakwana | % | ≥ 96.0 (Zvikanganiso zve2X2 zvinosanganisira Micropipe / Makomba Makuru, Karoti, Zvikanganiso zveTsamba nhatu, Kudonha, Linear/IGSF-s, BPD) | |
| Kusvibiswa kweSimbi Dzepamusoro | maatomu/cm2 | ≤5E10 maatomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pasuru | Zvimiro zvekurongedza | - | kaseti ine wafer yakawanda kana mudziyo mumwe chete wewafer |
Mubvunzo wekutanga: Ndezvipi zvakanakira kushandisa mawafer eSiC pane mawafer echinyakare esilicon mumagetsi ane simba?
A1:
Mawafer eSiC ane mabhenefiti akawanda akakosha pane mawafer echinyakare esilicon (Si) mumagetsi emagetsi, anosanganisira:
Kushanda Kwakanyanya: SiC ine bandgap yakakura (3.26 eV) kana tichienzanisa nesilicon (1.1 eV), zvichibvumira michina kushanda pamagetsi akakwira, mafrequency, uye tembiricha. Izvi zvinotungamira pakurasikirwa kwesimba rakaderera uye kushanda zvakanaka mumasisitimu ekushandura simba.
Kufambisa Kwekupisa Kwakanyanya: Kufambiswa kwekupisa kweSiC kwakakwira zvikuru kupfuura kwesilicon, zvichiita kuti kupisa kuparadzike zviri nani mumashandisirwo ane simba guru, izvo zvinovandudza kuvimbika uye hupenyu hwemidziyo yemagetsi.
Kubata Kwemagetsi Akakwira uye Kubata Kwemazuva Ano: Midziyo yeSiC inogona kubata voltage yakakwira uye mazinga emagetsi, zvichiita kuti ive yakakodzera kushandiswa kwemagetsi ane simba guru senge mota dzemagetsi, masisitimu esimba rinogona kudzokororwa, uye madhiraivha emota dzemaindasitiri.
Kukurumidza Kuchinja Kumhanya: Midziyo yeSiC ine kugona kukurumidzira kushandura, izvo zvinobatsira kuderedza kurasikirwa kwesimba uye saizi yesystem, zvichiita kuti ive yakakodzera kushandiswa kwema "high-frequency".
Mubvunzo wechipiri: Ndeapi mashandisirwo makuru eSiC wafers muindasitiri yemotokari?
A2:
Muindasitiri yemotokari, mawafer eSiC anonyanya kushandiswa mu:
Mota dzemagetsi (EV): Zvikamu zveSiC zvakaita sema inverteruyesimba reMOSFETkuvandudza mashandiro uye kushanda zvakanaka kwemagetsi emotokari dzemagetsi nekuita kuti kuchinjana kumhanye nekukurumidza uye kuwanda kwesimba remagetsi. Izvi zvinoita kuti bhatiri rigare kwenguva refu uye kushanda zvakanaka kwemotokari.
Machaja Ari Muchikepe: Midziyo yeSiC inobatsira kuvandudza mashandiro ehurongwa hwekuchaja huri mundege nekugonesa nguva yekuchaja nekukurumidza uye manejimendi yekupisa iri nani, izvo zvakakosha kuti maEV atsigire nzvimbo dzekuchaja dzine simba guru.
Masisitimu Ekutarisira Mabhatiri (BMS): Tekinoroji yeSiC inovandudza mashandiro emasisitimu ekugadzirisa mabhatiri, zvichiita kuti magetsi adzorwe zviri nani, simba rishande zvakanaka, uye bhatiri rigare kwenguva refu.
Vashanduri veDC-DC: Mawafer eSiC anoshandiswa muVashanduri veDC-DCkushandura simba reDC rine simba guru kuita simba reDC rine simba shoma zvinobudirira, izvo zvakakosha mumotokari dzemagetsi kuti dzikwanise kudzora simba kubva kubhatiri kuenda kuzvikamu zvakasiyana-siyana mumotokari.
Kushanda zvakanaka kweSiC mukushandisa magetsi ane simba guru, tembiricha yepamusoro, uye kushanda zvakanaka kunoita kuti zvive zvakakosha kuti indasitiri yemotokari ishandukire kuenda kumagetsi.
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