SiC Ingot Kukura Bira kune Yakakura-Diamita SiC Crystal TSSG/LPE Nzira

SiC Ingot Kukura Bira reMakuru-Diamita SiC Crystal TSSG/LPE Nzira Dzakaratidzwa Mufananidzo

Tsanangudzo Pfupi

XKH's liquid-phase silicon carbide ingot growth furnace inoshandisa TSSG inotungamira pasi rose (Top-Seeded Solution Growth) uye LPE (Liquid Phase Epitaxy) matekinoroji, akagadzirirwa chaizvo zvemhando yepamusoro SiC single crystal kukura. Iyo TSSG nzira inogonesa kukura kwe4-8 inch yakakura-diameter 4H / 6H-SiC ingots kuburikidza chaiyo tembiricha gradient uye mbeu inosimudza kukurumidza kutonga, nepo nzira yeLPE inofambisa inodzorwa kukura kweSiC epitaxial layers pakudzika kwakadzika, kunyanya yakakodzera kune Ultra-yakaderera defect gobvu epitaxial layers. Iyi liquid-phase silicon carbide ingot kukura sisitimu yakashandiswa zvakabudirira mukugadzirwa kwemaindasitiri kweakasiyana makristasi eSiC anosanganisira 4H/6H-N mhando uye 4H/6H-SEMI insulating mhando, ichipa mhinduro dzakakwana kubva kumidziyo kuenda kune maitiro.

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Features

Kushanda Nheyo

Nheyo yemusimboti wemvura-chikamu silicon carbide ingot kukura inosanganisira kunyungudutsa-kuchena kweSiC zviwanikwa musimbi dzakanyungudutswa (semuenzaniso, Si, Cr) pa1800-2100 ° C kugadzira mhinduro dzakazadza, inoteverwa neinodzorwa inotungamira kukura kweSiC makristasi embeu kuburikidza neyakajeka tembiricha reguration. Iyi tekinoroji inonyanya kukodzera kugadzira-kuchena kwepamusoro (> 99.9995%) 4H/6H-SiC makristasi ega ane density yakaderera (<100/cm²), kusangana neyakaomesesa substrate zvinodiwa zvemagetsi emagetsi uye RF zvishandiso. Iyo yemvura-chikamu chekukura sisitimu inogonesa kunyatso kudzora kwekristaro conductivity mhando (N / P mhando) uye resistivity kuburikidza neyakagadziriswa mhinduro kuumbwa uye kukura paramita.

Core Components

1. Special Crucible System: High-purity graphite / tantalum composite crucible, tembiricha yekudzivirira> 2200 ° C, inopesana neSiC inonyunguduka corrosion.

2. Multi-zone Heating System: Kusanganiswa kupikisa / induction kupisa nekugadzirisa kupisa kwekushisa kwe ± 0.5 ° C (1800-2100 ° C range).

3. Precision Motion System: Dual yakavharwa-loop kutonga kwembeu kutenderera (0-50rpm) uye kusimudza (0.1-10mm / h).

4. Atmosphere Control System: High-purity argon / nitrogen kuchengetedzwa, kugadziriswa kushanda kudzvinyirira (0.1-1atm).

5. Intelligent Control System: PLC + industrial PC redundant control ine chaiyo-nguva yekukura interface yekutarisa.

6. Inoshanda Inotonhorera System: Yakagadziriswa mvura inotonhorera dhizaini inovimbisa kushanda kwenguva refu yakagadzikana.

TSSG vs. LPE Kuenzanisa

Hunhu	Nzira yeTSSG	LPE nzira
Kukura Temp	2000-2100°C	1500-1800°C
Chiyero chekukura	0.2-1mm/h	5-50μm/h
Crystal Size	4-8 inch ingots	50-500μm epi-layers
Main Application	Kugadzirira kwe substrate	Simba mudziyo epi-layers
Defect Density	<500/cm²	<100/cm²
Inokodzera Polytypes	4H/6H-SiC	4H/3C-SiC

Key Applications

1. Simba reMagetsi: 6-inch 4H-SiC substrates ye1200V + MOSFETs / diode.

2. 5G RF Devices: Semi-insulating SiC substrates for base station PAs.

3. EV Applications: Ultra-gobvu (> 200μm) epi-layers yemotokari-giredhi modules.

4. PV Inverters: Low-defect substrates inogonesa> 99% kutendeuka kushanda zvakanaka.

Core Advantages

1. Tekinoroji yepamusoro
1.1 Yakabatanidzwa Multi-Method Dhizaini
Iyi yemvura-chikamu SiC ingot yekukura sisitimu inosanganisa TSSG uye LPE crystal kukura matekinoroji. Iyo TSSG system inoshandisa top-seeded solution kukura nechaiyo melt convection uye tembiricha gradient control (ΔT≤5℃/cm), ichigonesa kukura kwakadzikama kwe4-8 inch yakakura-diameter SiC ingots ine imwechete-run goho re15-20kg ye6H / 4H-SiC makristasi. Iyo LPE sisitimu inoshandisa optimized solvent kuumbwa (Si-Cr alloy system) uye supersaturation control (± 1%) kukura emhando yepamusoro epitaxial layers ine density <100/cm² pakudziya kwakadzikira (1500-1800 ℃).

1.2 Intelligent Control System
Yakashongedzerwa ne4th-chizvarwa smart kukura control ine:
• Multi-spectral in-situ monitoring (400-2500nm wavelength range)
• Laser-based melt level yekuona (± 0.01mm chaiyo)
• CCD-based dhayamita yakavharwa-loop control (<± 1mm kuchinja)
• AI-powered kukura parameter optimization (15% simba rekuchengetedza)

2. Process Performance Advantages
2.1 TSSG Nzira Yepakati Masimba
• Hukuru-hukuru kugona: Inotsigira kusvika 8-inch crystal kukura ne>99.5% dhayamita kufanana
• Kupenya kwakanyanya: Dislocation density <500/cm², micropipe density <5/cm²
• Doping uniformity: <8% n-type resistivity variation (4-inch wafers)
• Optimized kukura mwero: Adjustable 0.3-1.2mm/h, 3-5× nokukurumidza kupfuura vapor-phase nzira

2.2 LPE Nzira Yepakati Masimba
• Ultra-low defect epitaxy: Interface state density <1×10¹¹cm⁻²·eV⁻¹
• Kunyatso kudzora ukobvu: 50-500μm epi-zviyereso zvine <± 2% kusiyana kweukobvu
• Kudzika-kupisa kushanda zvakanaka: 300-500 ℃ yakaderera pane CVD maitiro
• Kukura kwechimiro chakaoma: Inotsigira pn junctions, superlattices, nezvimwe.

3. Kubudirira Kwekugadzira Zvakanakira
3.1 Kudzora Mutengo
• 85% kushandiswa kwezvinhu (vs. 60% zvakajairika)
• 40% yakaderera kushandiswa kwesimba (zvichienzaniswa neHVPE)
• 90% midziyo yekukwira nguva (modular dhizaini inoderedza kuderera)

3.2 Kuvimbiswa Kwemhando
• 6σ process control (CPK>1.67)
• Kuonekwa kwakakanganiswa pamhepo (0.1μm resolution)
• Full-process data traceability (2000+ real-time parameters)

3.3 Scalability
• Inoenderana ne4H/6H/3C polytypes
• Upgradeable kusvika 12-inch process modules
• Inotsigira SiC/GaN hetero-integration

4. Indasitiri Application Advantages
4.1 Power Devices
• Low-resistivity substrates (0.015-0.025Ω·cm) ye1200-3300V zvishandiso
• Semi-insulating substrates (>10⁸Ω·cm) yemashandisirwo eRF

4.2 Emerging Technologies
• Quantum communication: Ultra-low noise substrates (1/f ruzha<-120dB)
• Mhoteredzo dzakanyanyisa: Makristasi asingaurayiwi nemwaranzi (<5% kushatiswa mushure mekurudzwa kwe1×10¹⁶n/cm²)

XKH Services

1. Customized Equipment: Yakagadzirirwa TSSG / LPE maitiro ehurongwa.
2. Kudzidzira Maitiro: Yakakwana hunyanzvi hwekudzidzisa zvirongwa.
3. Mushure mekutengesa Kutsigira: 24/7 yehutano mhinduro nekugadzirisa.
4. Turnkey Solutions: Yakazara-sevhisi sevhisi kubva pakugadzika kusvika pakugadzirisa kusimbiswa.
5. Material Supply: 2-12 inch SiC substrates / epi-wafers iripo.

Mabhenefiti akakosha anosanganisira:
• Kusvika ku8-inch crystal kukura kukwanisa.
• Resistivity kufanana <0.5%.
• Equipment uptime >95%.
• 24/7 tsigiro yehunyanzvi.