SiC Ingot Growth Furnace yeSiC Crystal TSSG/LPE Methods ine dhayamita hombe

SiC Ingot Growth Furnace yeSiC Crystal TSSG/LPE Methods Mufananidzo Unoratidzwa

Tsananguro pfupi:

Chitofu cheXKH che liquid-phase silicon carbide ingot growth furnace chinoshandisa matekinoroji epasi rose eTSSG (Top-Seeded Solution Growth) uye LPE (Liquid Phase Epitaxy), akagadzirirwa kukura kweSiC single crystal yemhando yepamusoro. Nzira yeTSSG inogonesa kukura kwe4-8 inch large-diameter 4H/6H-SiC ingots kuburikidza nekupisa kwakanyatsojeka uye kudzora kumhanya kwekusimudza mbeu, nepo nzira yeLPE ichigonesa kukura kwakadzorwa kweSiC epitaxial layers patembiricha yakaderera, kunyanya yakakodzera kune ultra-low defect thick epitaxial layers. Iyi liquid-phase silicon carbide ingot growth system yakashandiswa zvinobudirira mukugadzirwa kwemakristaro akasiyana-siyana eSiC anosanganisira 4H/6H-N type uye 4H/6H-SEMI insulating type, ichipa mhinduro dzakakwana kubva kumidziyo kusvika kune dzimwe nzira.

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Nheyo yekushanda

Musimboti mukuru wekukura kweingot yesilicon carbide inonyungudutsa mvura ine purity yakakura musimbi dzakanyungudutswa (semuenzaniso, Si, Cr) pa1800-2100°C kuti pave nemhinduro dzakaguta, zvichiteverwa nekukura kweSiC single crystals pambeu kuburikidza nekupisa kwakanyatsojeka uye supersaturation regulation. Iyi tekinoroji yakakodzera zvikuru kugadzira high-purity (>99.9995%) 4H/6H-SiC single crystals ine defect density yakaderera (<100/cm²), ichisangana nezvinodiwa zvakasimba zve substrate zvemagetsi emagetsi neRF devices. Sisitimu yekukura kweiquid-phase inogonesa kudzora kwakanyatsojeka kwemhando ye crystal conductivity (N/P type) uye resistivity kuburikidza ne optimized solution composition uye growth parameters.

Zvikamu Zvikuru

1. Sisitimu Yekupisira Yakakosha: Graphite/tantalum composite crucible yakachena kwazvo, inodzivirira kupisa >2200°C, inodzivirira ngura yekunyunguduka kweSiC.

2. Sisitimu yekudziisa ine mativi akawanda: Kudziyisa kwakabatana kwekudzivirira/kudziyisa kwekupisa nekururama kwekudzora tembiricha kwe ±0.5°C (1800-2100°C).

3. Sisitimu Yekufamba Nekunyatso: Kudzora kwakavharwa-kutenderera kaviri kwekutenderera kwembeu (0-50rpm) nekusimudza (0.1-10mm/h).

4. Sistimu Yekudzora Mhepo: Dziviriro yeArgon/nitrogen yakachena kwazvo, kumanikidzwa kwekushanda kunogadziriswa (0.1-1atm).

5. Sisitimu Yekudzora Yakangwara: PLC + kutonga kusingachashandiswi kwePC yeindasitiri nekutarisa kukura kweinterface panguva chaiyo.

6. Sisitimu Yokutonhodza Inoshanda Zvakanaka: Dhizaini yekutonhodza mvura yakarongwa inoita kuti ishande zvakanaka kwenguva refu.

Kuenzanisa TSSG vs. LPE

Hunhu	Nzira yeTSSG	Nzira yeLPE
Kupisa Kwekukura	2000-2100°C	1500-1800°C
Mwero wekukura	0.2-1mm/awa	5-50μm/awa
Saizi yeKristaro	Zvidimbu zve 4-8 inches	50-500μm epi-layers
Kushandiswa Kukuru	Kugadzirira substrate	Zvikamu zve epi zvechishandiso chemagetsi
Kuwanda Kwechikanganiso	<500/cm²	<100/cm²
Mhando Dzakakodzera dzePolytypes	4H/6H-SiC	4H/3C-SiC

Zvishandiso Zvikuru

1. Power Electronics: 6-inch 4H-SiC substrates dze1200V+ MOSFETs/diodes.

2. Midziyo ye5G RF: Zvishandiso zveSiC zvinodzivirira kupisa zve PA dzenzvimbo dzepasi.

3. Mashandisirwo eEV: Ma epi-layers akakora zvakanyanya (>200μm) emota dzemhando yepamusoro.

4. PV Inverters: Substrates dzisina dambudziko rakakwana dzinoita kuti pave nekushanda zvakanaka kwe >99%.

Zvakanakira Zvikuru

1. Kubudirira Kwetekinoroji
1.1 Dhizaini Yakabatanidzwa Yenzira Dzakawanda
Iyi sisitimu yekukura kweSiC ingot yemvura inosanganisa tekinoroji yekukura kweTSSG neLPE crystal. Sisitimu yeTSSG inoshandisa kukura kwemhinduro ine mbeu yepamusoro ine convection chaiyo yekunyunguduka uye kudzora tembiricha (ΔT≤5℃/cm), zvichiita kuti kukura kwakasimba kweingots dzeSiC dzakakura dze4-8 inch dzine goho rimwe chete re15-20kg ye6H/4H-SiC crystals. Sisitimu yeLPE inoshandisa optimized solvent composition (Si-Cr alloy system) uye supersaturation control (±1%) kuti ikure epitaxial layers dzakakora dzemhando yepamusoro dzine defect density <100/cm² patembiricha yakaderera (1500-1800℃).

1.2 Sisitimu Yekudzora Yakangwara
Yakashongedzerwa nehukuru hwechizvarwa chechina, ine:
• Kutarisa kwenzvimbo ine maspectral akawanda (400-2500nm wavelength range)
• Kuona mwero wekunyunguduka uchishandisa laser (± 0.01mm chaiyo)
• Kudzora kwedhayamita yakavakirwa paCCD (<±1mm kuchinja)
• Kugadziriswa kwematanho ekukura anofambiswa neAI (15% kuchengetedza simba)

2. Mabhenefiti Ekushanda Kwemaitiro
2.1 Nzira yeTSSG Simba repakati
• Kugona kukuru: Kunotsigira kukura kwemakristaro kusvika masendimita masere nehupamhi hwakaenzana hwedhayamita >99.5%.
• Kupenya kwakanyanya: Kuwanda kwe dislocation <500/cm², kuwanda kwe micropipe <5/cm²
• Kufanana kwekushandisa zvinodhaka: <8% n-type resistivity variation (4-inch wafers)
• Kukura kwakagadziriswa: Kunogona kugadziriswa 0.3-1.2mm/awa, 3-5× nekukurumidza kupfuura nzira dzevapor-phase

2.2 Nzira yeLPE Simba repakati
• Chikanganiso chakaderera zvakanyanya epitaxy: Kuwanda kwenzvimbo yekubatanidza <1×10¹¹cm⁻²·eV⁻¹
• Kudzora ukobvu nemazvo: 50-500μm epi-layers ine kusiyana kweukobvu <±2%
• Kushanda zvakanaka pakupisa kwakaderera: 300-500℃ yakaderera pane maitiro eCVD
• Kukura kwechimiro chakaoma: Kunotsigira pn junctions, superlattices, nezvimwewo.

3. Zvakanakira Kushanda Nesimba Mukugadzira
3.1 Kudzora Mutengo
• 85% kushandiswa kwezvinhu zvisina kugadzirwa (zvichienzaniswa ne60% yetsika)
• Kushandiswa kwesimba kwakaderera ne40% (zvichienzaniswa neHVPE)
• 90% yekushanda kwemidziyo (dhizaini yemodular inoderedza nguva yekushanda)

3.2 Kuvimbisa Hunhu Hwakanaka
• Kudzora maitiro e6σ (CPK>1.67)
• Kuona zvikanganiso paindaneti (0.1μm resolution)
• Kutevedza data zvizere (2000+ maparameter enguva chaiyo)

3.3 Kukwanisa Kukura
• Inoenderana ne4H/6H/3C polytypes
• Inogona kukwidziridzwa kuita mamodule e12-inch process
• Inotsigira kubatanidzwa kweSiC/GaN hetero

4. Zvakanakira zveKushandiswa kweIndasitiri
4.1 Zvishandiso zveMagetsi
• Zvishandiso zvepasi zvisingapindi simba zvakanyanya (0.015-0.025Ω·cm) zvemidziyo ine simba re1200-3300V
• Zvidziyo zvinodzivirira kupisa (>10⁸Ω·cm) zvekushandisa RF

4.2 Matekinoroji Ari Kubudirira
• Kutaurirana kweQuantum: Zvishandiso zveruzha rwakaderera zvakanyanya (1/f ruzha<-120dB)
• Nzvimbo dzakanyanya: Makristaro anodzivirira mwaranzi (<5% kuora mushure mekupiswa nemwaranzi kwe1×10¹⁶n/cm²)

Mabasa eXKH

1. Midziyo Yakagadzirwa Nemunhu: Magadzirirwo eTSSG/LPE system akagadzirirwa munhu wacho.
2. Kudzidziswa Kwemaitiro: Mapurogiramu ekudzidzisa ehunyanzvi akakwana.
3. Rutsigiro rwekutengeswa mushure mekutengesa: Mhinduro yehunyanzvi uye kugadzirisa 24/7.
4. Mhinduro dzeTurnkey: Sevhisi yakazara kubva pakuisa kusvika pakusimbisa mashandiro.
5. Zvinhu Zvinowanikwa: 2-12 inch SiC substrates/epi-wafers dziripo.

Zvakanakira zvikuru zvinosanganisira:
• Kukwanisa kukura kwekristaro kusvika masendimita masere.
• Kufanana kweResistivity <0.5%.
• Nguva yekushandisa michina >95%.
• Rutsigiro rwehunyanzvi 24/7.