SiC
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12 inch SIC substrate silicon carbide prime giredhi dhayamita 300mm hombe saizi 4H-N Inokodzera yakakwirira simba mudziyo kupisa kupisa
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8 inch SiC silicon carbide wafer 4H-N mhando 0.5mm kugadzirwa kwegiredhi rekutsvaga giredhi tsika yakakwenenzverwa substrate
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HPSI SiC wafer dia:3inch ukobvu:350um± 25 µm yeMagetsi Emagetsi
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3inch High kuchena Semi-Insulating (HPSI)SiC wafer 350um Dummy giredhi Prime giredhi
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P-mhando SiC substrate SiC wafer Dia2inch chigadzirwa chitsva
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8inch 200mm Silicon Carbide SiC Wafers 4H-N mhando Kugadzira giredhi 500um ukobvu
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Kaviri Yakakwenenzverwa Conductive Prime Giredhi Mos
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Silicon Carbide (SiC) Imwe-Crystal Substrate - 10×10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer yeMOS kana SBD
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SiC Epitaxial Wafer yeMagetsi Devices - 4H-SiC, N-mhando, Yakaderera Defect Density
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4H-N Rudzi rweSiC Epitaxial Wafer Yakakwirira Voltage Yakakwirira Frequency
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3 inch Kuchena Kwepamusoro (Kusina Kupedzwa) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)