SiC
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12 inch SIC substrate silicon carbide prime grade dhayamita 300mm saizi hombe 4H-N Yakakodzera kupisa kwemudziyo une simba guru
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8 inch SiC silicon carbide wafer 4H-N mhando 0.5mm giredhi rekugadzira rekutsvaga giredhi rekugadzira substrate yakagadziriswa yakashongedzwa
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HPSI SiC wafer dia: 3inch thickness: 350um ± 25 µm yePower Electronics
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3inch High pure Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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Chigadzirwa chitsva cheP-type SiC substrate SiC wafer Dia2inch
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8inch 200mm Silicon Carbide SiC Wafers 4H-N mhando yekugadzira giredhi 500um ukobvu
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Yakaposhwa Kaviri Yakagadziriswa Conductive Prime Giredhi Mos Giredhi
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Wafer ine 12-Inch 4H-SiC yemagirazi eAR
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HPSI SiC Wafer ≥90% Transmittance Optical Grade yeAI/AR Glasses
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Semi-Insulating Silicon Carbide (SiC) Substrate Yakachena Kwazvo Yemagirazi eAr
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MaWafer e4H-SiC Epitaxial eMOSFETs ane Voltage Yakanyanya Kukwira (100–500 μm, 6 inch)
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SICOI (Silicon Carbide iri paInsulator) Wafers SiC Firimu paSilicon