p-mhando 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Tsanangudzo Pfupi:

Iyo P-mhando 4H/6H-P 3C-N mhando SiC substrate, 4-inch ine 〈111〉± 0.5° orientation uye Zero MPD (Micro Pipe Defect) giredhi, ndeyepamusoro-performance semiconductor zvinhu zvakagadzirirwa advanced electronic device. kugadzira. Inozivikanwa nekunaka kwayo kwemafuta ekupisa, yakakwira breakdown voltage, uye kuramba kwakasimba kune tembiricha yakakwira uye ngura, iyi substrate yakanakira magetsi emagetsi uye maRF application. Iyo Zero MPD giredhi inovimbisa kushoma kuremara, kuve nechokwadi chekuvimbika uye kugadzikana mune yepamusoro-inoshanda michina. Yayo chaiyo 〈111〉± 0.5 ° kutaridzika inobvumira kurongeka kwakaringana panguva yekugadzira, ichiita kuti ive yakakodzera kune yakakura-yekugadzira maitiro. Iyi substrate inoshandiswa zvakanyanya mukupisa-tembiricha, yakakwira-voltage, uye yakakwira-frequency zvigadzirwa zvemagetsi, senge magetsi anoshandura, inverters, uye zvikamu zveRF.

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Product Detail

Product Tags

4H/6H-P Type SiC Composite Substrates Common parameter tafura

4 inch dhayamita SiliconCarbide (SiC) Substrate Tsanangudzo

Giredhi			Zero MPD Kugadzirwa Giredhi (Z Giredhi)	Standard Production Giredhi (P Giredhi)	Dummy Grade (D Giredhi)
Diameter			99.5 mm ~ 100.0 mm
Ukobvu			350 μm ± 25 μm
Wafer Orientation			Kunze kweakisi: 2.0 ° -4.0 ° kuenda [112(-)0] ± 0.5° nokuda kwe4H/6H-P, On axis:〈111〉± 0.5° nokuda kwe3C-N
Micropipe Density			0 masendimita-2
Resistivity	p-mhando 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mhando 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Yekutanga Flat Oriental		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Primary Flat Length			32.5 mm ± 2.0 mm
Secondary Flat Length			18.0 mm ± 2.0 mm
Secondary Flat Orientation			Silicon yakatarisana kumusoro: 90° CW. kubva kuPrime flat±5.0°
Kusabatanidzwa kumucheto			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kukasharara			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Chiedza			Hapana		Kureba kwekuwedzera ≤ 10 mm, kureba kamwe≤2 mm
Hex Plates By High Intensity Chiedza			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza			Hapana		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Yakawedzerwa nzvimbo ≤3%
Silicon Surface Scratches By High Intensity Chiedza			Hapana		Cumulative kureba≤1×wafer dhayamita
Edge Chips High By Intensity Chiedza			Hapana anotenderwa ≥0.2mm hupamhi nekudzika		5 inotenderwa, ≤1 mm imwe neimwe
Silicon Surface Kusvibiswa NeKunyanya Kusimba			Hapana
Packaging			Multi-wafer Cassette kana Single Wafer Container

Notes:

※ Miganho yekukanganisa inoshanda kune yese wafer pamusoro kunze kweiyo yekumucheto nzvimbo yekusarudzika. # Iwo mavanga anofanirwa kutariswa paSi face chete.

Iyo P-mhando 4H/6H-P 3C-N mhando 4-inch SiC substrate ine 〈111〉± 0.5° yakatarisa uye Zero MPD giredhi rinoshandiswa zvakanyanya mukushanda kwemagetsi maapplication. Yayo yakanaka kwazvo yekupisa conductivity uye yakakwirira breakdown voltage inoita kuti ive yakakodzera kune magetsi emagetsi, akadai seakakwira-voltage switch, inverters, uye magetsi anoshandura, anoshanda mumamiriro ezvinhu akanyanya. Pamusoro pezvo, iyo substrate kuramba kune tembiricha yakakwira uye ngura inovimbisa kuita kwakagadzikana munzvimbo dzakaoma. Iyo chaiyo 〈111〉± 0.5 ° yekumisikidza inosimudzira kugadzira kwayo, ichiita kuti ive yakakodzera kune RF zvishandiso uye yakakwirira-frequency application, senge radar masisitimu uye isina waya yekutaurirana michina.

Zvakanakira zveN-mhando SiC composite substrates zvinosanganisira:

1. High Thermal Conductivity: Kunyatsopisa kupisa kwekushisa, zvichiita kuti ive yakakodzera nzvimbo dzepamusoro-soro uye kushandiswa kwemasimba makuru.
2. High Breakdown Voltage: Inovimbisa kushanda kwakavimbika mu-high-voltage applications semagetsi ekushandura uye inverters.
3. Zero MPD (Micro Pipe Defect) Giredhi: Inovimbisa kukanganisa kuduku, kupa kugadzikana uye kuvimbika kwepamusoro muzvigadzirwa zvemagetsi zvakakosha.
4. Corrosion Resistance: Inogara munzvimbo dzakaoma, kuve nechokwadi chekushanda kwenguva refu mumamiriro ezvinhu anoda.
5. Yakarurama 〈111〉± 0.5 ° Oriental: Inobvumira kurongeka kwakarurama panguva yekugadzira, kuvandudza kushanda kwechigadzirwa mu-high-frequency uye RF kushandiswa.

Pakazere, iyo P-mhando 4H/6H-P 3C-N mhando 4-inch SiC substrate ine 〈111〉± 0.5° kutariswa uye Zero MPD giredhi chinhu chepamusoro-chinoshanda chakanakira maapplication epamusoro emagetsi. Yayo yakanakisa yekupisa conductivity uye yakakwira breakdown voltage inoita kuti ive yakakwana kumagetsi emagetsi senge-high-voltage switch, inverters, uye converters. Iyo Zero MPD giredhi inovimbisa kushoma kuremara, ichipa kuvimbika uye kugadzikana mumidziyo yakakosha. Pamusoro pezvo, kuramba kweiyo substrate kune ngura uye tembiricha yakakwira inovimbisa kusimba munzvimbo dzakaoma. Iyo chaiyo 〈111〉± 0.5 ° yekumisikidza inobvumira kurongeka kwakaringana panguva yekugadzira, ichiita kuti ive yakakodzera zvakanyanya kuRF zvishandiso uye yakakwirira-frequency application.