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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD

p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD Mufananidzo Wakatariswa
  • p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Tsananguro pfupi:

Substrate yeP-type 4H/6H-P 3C-N yeSiC substrate, ine 4-inch ine 〈111〉± 0.5° orientation uye Zero MPD (Micro Pipe Defect) grade, imhando ye semiconductor inoshanda zvakanyanya yakagadzirirwa kugadzirwa kwemidziyo yemagetsi yepamusoro. Inozivikanwa nekupisa kwayo kwakanaka, voltage yakanyanya kupwanyika, uye kuramba kwakasimba kupisa kwakanyanya uye ngura, substrate iyi yakakodzera kune magetsi emagetsi uye maRF applications. Zero MPD grade inovimbisa zvikanganiso zvishoma, ichivimbisa kuvimbika uye kugadzikana mumidziyo inoshanda zvakanyanya. Kurongeka kwayo kwakarurama kwe 〈111〉± 0.5° kunobvumira kurongeka kwakarurama panguva yekugadzira, zvichiita kuti ikodzere maitiro makuru ekugadzira. Substrate iyi inoshandiswa zvakanyanya mumidziyo yemagetsi inodziya zvakanyanya, ine voltage yakawanda, uye ine frequency yakawanda, senge ma power converters, inverters, uye RF components.


Zvinhu zvirimo

4H/6H-P Rudzi rweSiC Composite Substrates Tafura yeparamende yakajairika

4 dhayamita ye inchChikamu cheCarbide (SiC) Tsanangudzo

 

Giredhi Kugadzirwa kweMPD kusina

Giredhi (Z) Giredhi)

 Kugadzirwa Kwakajairika

Giredhi (P) Giredhi)

  

Giredhi reDummy (D Giredhi)
Dhayamita 99.5 mm~100.0 mm
Ukobvu 350 μm ± 25 μm
Kudzidziswa kweWafer Off axis: 2.0°-4.0° kuenda ku [11]2(-)0] ± 0.5° ye4H/6H-P, On axis:〈111〉± 0.5° ye3C-N
Kuwanda kwepombi dze micropombi 0 cm-2
Kuramba p-type 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
n-rudzi 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kutungamira Kwakatsetseka Kwepakutanga 4H/6H-P -

{1010} ± 5.0°
3C-N -

{110} ± 5.0°
Hurefu Hwepamusoro-soro 32.5 mm ± 2.0 mm
Kureba Kwechipiri Kwakatsetseka 18.0 mm ± 2.0 mm
Kudzidziswa kwechipiri kwakadzikama Silikoni yakatarisana mudenga: 90° CW. kubva kuPrime flat±5.0°
Kusabatanidzwa kweMupendero 3 mm 6 mm
LTV/TTV/Uta /Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kuomarara ChiPolish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Mipata yemucheto nechiedza chakasimba Hapana Kureba kwakaunganidzwa ≤ 10 mm, kureba kumwe chete ≤2 mm
Hex Plates Nechiedza Chakanyanya Kusimba Nzvimbo yakaunganidzwa ≤0.05% Nzvimbo yakaunganidzwa ≤0.1%
Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba Hapana Nzvimbo yakaunganidzwa ≤3%
Kubatanidzwa kweKabhoni Inoonekwa Nzvimbo yakaunganidzwa ≤0.05% Nzvimbo yakaunganidzwa ≤3%
Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba Hapana Kureba kwakawedzerwa ≤1 × dhayamita yechinwiwa
Edge Chips High By Intensity Light Hapana chinobvumidzwa ≥0.2mm upamhi uye kudzika 5 inobvumirwa, ≤1 mm imwe neimwe
Kusvibiswa kweSilicon pamusoro Nesimba Rakanyanya Hapana
Kurongedza Kaseti yewafer yakawanda kana mudziyo wewafer mumwe chete

Zvinyorwa:

※Miganho yekukanganisa inoshanda pamusoro pewafer yese kunze kwenzvimbo isina kuvharwa nemupendero. # Mavanga acho anofanira kuongororwa pachiso cheSi chete.

Substrate yeP-type 4H/6H-P 3C-N ine 4-inch SiC ine 〈111〉± 0.5° orientation uye Zero MPD grade inoshandiswa zvakanyanya mumashandisirwo emagetsi anoshanda zvakanyanya. Kufambisa kwayo kupisa kwakanaka uye voltage yakakwira zvinoita kuti ive yakakodzera kune magetsi emagetsi, akadai semaswichi emagetsi ane simba guru, ma inverter, uye ma power converters, anoshanda mumamiriro ezvinhu akaoma. Pamusoro pezvo, kuramba kwe substrate kukupisa kwakanyanya uye ngura kunoita kuti ishande zvakanaka munzvimbo dzakaoma. Kurongeka kwakarurama kwe 〈111〉± 0.5° kunosimudzira kurongeka kwekugadzira, zvichiita kuti ive yakakodzera michina yeRF uye mashandisirwo emagetsi ane simba guru, akadai se radar systems uye michina yekutaurirana isina waya.

Zvakanakira zveN-type SiC composite substrates zvinosanganisira:

1. Kupisa Kwakanyanya: Kupisa kwakanyatsonaka, zvichiita kuti ikodzere nzvimbo dzinopisa zvakanyanya uye mashandisirwo ane simba guru.
2. Voltage Yakapararira Zvikuru: Inovimbisa kushanda kwakavimbika mumashandisirwo emagetsi ane simba rakanyanya senge ma converter emagetsi nema inverter.
3. Giredhi reZero MPD (Micro Pipe Defect): Rinovimbisa zvikanganiso zvishoma, richipa kugadzikana uye kuvimbika kwakanyanya mumidziyo yemagetsi yakakosha.
4. Kuramba Kuora: Kunogara kwenguva refu munzvimbo dzakaoma, zvichiita kuti ishande kwenguva refu mumamiriro ezvinhu akaoma.
5. Kurongeka Kwakarurama 〈111〉± 0.5°: Kunobvumira kurongeka kwakarurama panguva yekugadzira, zvichivandudza mashandiro emudziyo mumashandisirwo epamusoro-soro uye eRF.

 

Kazhinji, substrate yeP-type 4H/6H-P 3C-N ine 4-inch SiC ine 〈111〉± 0.5° orientation uye Zero MPD grade chinhu chinoshanda zvakanaka kwazvo chakanakira mashandisirwo emagetsi epamusoro. Kufambisa kwayo zvakanaka kwekupisa uye voltage yakakwira zvinoita kuti ive yakakwana kune ma electronics emagetsi akadai sema switch ane voltage yakakwira, ma inverter, uye ma converter. Zero MPD grade inoita kuti pave nekukanganisika kushoma, ichipa kuvimbika uye kugadzikana mumidziyo yakakosha. Pamusoro pezvo, kudzivirira kwe substrate kungura uye tembiricha yakakwira kunoita kuti igare kwenguva refu munzvimbo dzakaoma. Kurongeka kwakaringana kwe 〈111〉± 0.5° kunobvumira kurongeka kwakaringana panguva yekugadzira, zvichiita kuti ive yakakodzera kwazvo kune maRF devices uye mashandisirwo ane frequency yakakwira.

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