LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ye5G/6G Communications
Technical parameters
Zita | Optical-giredhi LiTaO3 | Inzwi tafura level LiTaO3 |
Axial | Z cheka + / - 0.2 ° | 36 ° Y kucheka / 42 ° Y kucheka / X kucheka (+ / - 0.2 °) |
Diameter | 76.2mm + / - 0.3mm/ 100±0.2mm | 76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm |
Datum ndege | 22mm +/ - 2mm | 22mm +/-2mm 32mm +/-2mm |
Ukobvu | 500um +/-5mm 1000um +/-5mm | 500um +/-20mm 350um +/-20mm |
TTV | ≤ 10um | ≤ 10um |
Curie tembiricha | 605 °C + / - 0.7 °C (DTA nzira) | 605 °C + / -3 °C (DTAmethod |
Surface quality | Kukwenenzvera kwemativi maviri | Kukwenenzvera kwemativi maviri |
Chamfered edges | kumucheto kutenderera | kumucheto kutenderera |
Hunhu Hunokosha
1.Electrical uye Optical Performance
· Electro-Optic Coefficient: r33 inosvika 30 pm / V (X-cut), 1.5 × yakakwirira kupfuura LiNbO3, ichigonesa ultra-wideband electro-optic modulation (> 40 GHz bandwidth).
· Broad Spectral Response: Transmission range 0.4–5.0 μm (8 mm ukobvu), ine ultraviolet absorption edge yakadzika se280 nm, yakanakira UV lasers uye quantum dot zvishandiso.
· Yakaderera Pyroelectric Coefficient: dP/dT = 3.5×10⁻⁴ C/(m²·K), ichivimbisa kugadzikana mune yakakwirira-tembiricha infrared sensors.
2. Thermal uye Mechanical Properties
· High Thermal Conductivity: 4.6 W/m·K (X-cut), quadruple iyo yequartz, inochengetedza -200–500°C thermal cycling.
· Low Thermal Expansion Coefficient: CTE = 4.1 × 10⁻⁶/K (25-1000 ° C), inopindirana nesilicon packaging kuti kuderedza kushushikana kwekushisa.
3.Kukanganisa Kudzora uye Kugadzira Precision
· Micropipe Density: <0.1 cm⁻² (8-inch wafers), dislocation density <500 cm⁻² (yakasimbiswa kuburikidza neKOH etching).
· Unhu Hwepamusoro: CMP-yakakwenenzverwa kuRa <0.5 nm, inosangana neEUV lithography-giredhi flatness zvinodiwa.
Key Applications
Domain | Application Scenarios | Technical Advantages |
Optical Communications | 100G/400G DWDM lasers, silicon photonics hybrid modules | LiTaO3 wafer's wide spectral transmission uye yakaderera waveguide kurasikirwa (α <0.1 dB/cm) inogonesa C-bhendi kuwedzera. |
5G/6G Kukurukurirana | SAW mafirita (1.8–3.5 GHz), BAW-SMR mafirita | 42°Y-akachekwa wafers anowana Kt²>15%, achiunza kurasikirwa kwakaderera kwekuisa (<1.5 dB) uye yakakwira roll-off (>30 dB). |
Quantum Technologies | Single-photon detectors, parametric pasi-shanduko masosi | High nonlinear coefficient (χ(2)=40 pm/V) uye yakaderera yakasviba kuverenga mwero (<100 counts/s) inosimudzira quantum kutendeka. |
Industrial Sensing | High-temperature pressure sensors, ikozvino transformers | LiTaO3 wafer's piezoelectric mhinduro (g33> 20 mV/m) uye kushivirira kwepamusoro-tembiricha (>400°C) inokodzera nharaunda dzakanyanyisa. |
XKH Services
1.Custom Wafer Fabrication
· Kukura uye Kucheka: 2-8-inch wafers ane X/Y/Z-akachekwa, 42 ° Y-akachekwa, uye tsika angular kucheka (± 0.01 ° kushivirira).
· Doping Control: Fe, Mg doping kuburikidza neCzochralski nzira (concentration range 10¹⁶–10¹⁹ cm⁻³) kugadzirisa electro-optic coefficients uye kugadzikana kwekupisa.
2.Advanced Process Technologies
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· Periodic Poling (PPLT): Smart-Cheka tekinoroji yeLTOI wafers, kuwana ± 10 nm domain nguva chaiyo uye quasi-chikamu-matched (QPM) frequency kutendeuka.
· Heterogeneous Integration: Si-based LiTaO3 composite wafers (POI) ine ukobvu control (300-600 nm) uye thermal conductivity inosvika 8.78 W/m·K ye-high-frequency SAW mafirita.
3.Quality Management Systems
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· Kupera-kusvika-Kupera Kuedzwa: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), uye optical uniformity test (Δn <5×10⁻⁵).
4.Global Supply Chain Support
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· Kukwanisa Kugadzira: Mwedzi unobuda> 5,000 wafers (8-inch: 70%), ine 48-awa yekukurumidza kuendesa.
· Logistics Network: Kuvharwa muEurope, North America, uye Asia-Pacific kuburikidza nemhepo/mugungwa zvinhu zvine tembiricha inodzorwa kurongedza.


