MaInGaAs epitaxial wafer substrate PD Array photodetector arrays anogona kushandiswa kuLiDAR
Zvinhu zvakakosha zveInGaAs laser epitaxial sheet zvinosanganisira
1. Kufananidza Lattice: Kufananidza lattice zvakanaka kunogona kuitwa pakati peInGaAs epitaxial layer neInP kana GaAs substrate, nokudaro zvichideredza defect density ye epitaxial layer uye kuvandudza mashandiro emudziyo.
2. Mukana webhendi unogadziriswa: Mukana webhendi wezvinhu zveInGaAs unogona kuwanikwa nekugadzirisa huwandu hwezvikamu zveIn neGa, izvo zvinoita kuti InGaAs epitaxial sheet ive neruzivo rwakakura rwezvishandiso muzvishandiso zve optoelectronic.
3. Kunzwa kwakanyanya kwechiedza: Firimu reInGaAs epitaxial rine kunzwa kwakanyanya kwechiedza, izvo zvinoita kuti rive muchikamu chekuona magetsi, kutaurirana kwemaziso nezvimwe zvakanakira zvakasiyana.
4. Kugadzikana kwekupisa kwakanyanya: Chimiro cheInGaAs/InP epitaxial chine kugadzikana kwakanaka kwekupisa kwakanyanya, uye chinogona kuchengetedza mashandiro akagadzikana emudziyo pakupisa kwakanyanya.
Mashandisirwo makuru emapiritsi eInGaAs laser epitaxial anosanganisira
1. Midziyo yeOptoelectronic: Mapiritsi eInGaAs epitaxial anogona kushandiswa kugadzira maphotodiode, maphotodetector nezvimwe zvishandiso zveOptoelectronic, zvine mashandisirwo akasiyana-siyana mukukurukurirana kwemaziso, kuona husiku nedzimwe nzvimbo.
2. MaLaser: Mapepa eInGaAs epitaxial anogonawo kushandiswa kugadzira maLaser, kunyanya maLaser ane urefu hwemafungu marefu, ayo anoita basa rakakosha mukukurukurirana kwefiber ye optical, kugadzirwa kwemaindasitiri nedzimwe nzvimbo.
3. Masero ezuva: Zvinhu zveInGaAs zvine nzvimbo yakakura yekugadzirisa gap, iyo inogona kusangana nezvinodiwa zvegap rebhandi zvinodiwa nemasero ekupisa ephotovoltaic, saka InGaAs epitaxial sheet inewo mukana wekushandiswa mumunda wemasero ezuva.
4. Kufungidzira kwezvokurapa: Mumidziyo yekufungidzira kwezvokurapa (yakadai seCT, MRI, nezvimwewo), yekuona nekutora mifananidzo.
5. Network yeSensor: mukutarisa zvakatipoteredza uye kuona gasi, ma parameter akawanda anogona kutariswa panguva imwe chete.
6. Kuzvigadzira otomatiki kweindasitiri: kunoshandiswa mumasisitimu ekuona kwemuchina kutarisa mamiriro uye mhando yezvinhu zviri pamutsetse wekugadzira.
Mune ramangwana, hunhu hweInGaAs epitaxial substrate hucharamba huchivandudzwa, kusanganisira kuvandudzwa kwekushanda kwe photoelectric conversion uye kudzikiswa kwemazinga eruzha. Izvi zvichaita kuti InGaAs epitaxial substrate ishandiswe zvakanyanya mumidziyo ye optoelectronic, uye mashandiro acho ave akanaka kwazvo. Panguva imwe chete, maitiro ekugadzirira acharamba achigadziriswa kuderedza mitengo uye kuvandudza mashandiro, kuitira kuti zvizadzise zvinodiwa nemusika mukuru.
Kazhinji, InGaAs epitaxial substrate ine chinzvimbo chakakosha mumunda wezvinhu zve semiconductor nehunhu hwayo hwakasiyana uye mikana yakawanda yekushandisa.
XKH inopa magadzirirwo emapepa eInGaAs epitaxial ane maumbirwo akasiyana uye ukobvu, achifukidza mashandisirwo akasiyana-siyana emidziyo ye optoelectronic, lasers, uye solar cells. Zvigadzirwa zveXKH zvinogadzirwa nemidziyo yepamusoro yeMOCVD kuti ive nechokwadi chekuti inoshanda uye yakavimbika. Panyaya yekutakura zvinhu, XKH ine nzira dzakasiyana-siyana dzepasi rose, dzinogona kubata nhamba yeodha nenzira inochinjika, uye dzinopa masevhisi akawedzerwa kukosha akadai sekunatswa nekupatsanurwa. Maitiro ekutumira anoshanda anovimbisa kutumirwa panguva uye kusangana nezvinodiwa nevatengi kuti zvive zvemhando yepamusoro uye nguva yekutumira.
Dhayagiramu Yakadzama



