InGaAs epitaxial wafer substrate PD Array photodetector arrays inogona kushandiswa kuLiDAR.
Akakosha maficha eInGaAs laser epitaxial sheet anosanganisira
1. Lattice matching: Yakanaka lattice inofananidzwa inogona kuwanikwa pakati peInGaAs epitaxial layer uye InP kana GaAs substrate, nokudaro kuderedza density density ye epitaxial layer nekuvandudza kushanda kwechigadzirwa.
2. Adjustable band gap: Iyo bhandi gap yeInGaAs zvinhu inogona kuwanikwa kuburikidza nekugadzirisa chikamu chezvikamu muIn uye Ga, izvo zvinoita kuti InGaAs epitaxial sheet ive nehuwandu hwemashandisirwo ekushandiswa mune zvigadzirwa zveoptoelectronic.
3. High photosensitivity: InGaAs epitaxial film ine high senitivity kuchiedza, iyo inoita kuti ive mumunda wekuona photoelectric, optical communication uye mamwe maitiro akasiyana.
4. Kugadzikana kwekushisa kwepamusoro: InGaAs / InP epitaxial structure ine yakanakisa kugadzikana kwekushisa kwepamusoro, uye inogona kuchengetedza yakagadzikana kushanda kwechigadzirwa pakupisa kwepamusoro.
Iwo makuru mashandisirwo eInGaAs laser epitaxial mahwendefa anosanganisira
1. Optoelectronic devices: InGaAs epitaxial tablets inogona kushandiswa kugadzira photodiodes, photodetectors uye mamwe maoptoelectronic madivayiri, ane maitiro akasiyana-siyana mukukurukurirana kwemaziso, kuona kweusiku uye mamwe minda.
2. Lasers: InGaAs epitaxial sheets inogonawo kushandiswa kugadzira lasers, kunyanya yakareba-wavelength lasers, iyo inobata basa rinokosha mu optical fiber communications, kushandiswa kwemabhizimisi uye mamwe minda.
3. Maseru eSolar: InGaAs zvinhu zvine hupamhi bhendi gap kugadzirisa renji, iyo inogona kusangana neiyo bhendi gap zvinodiwa ne thermal photovoltaic masero, saka InGaAs epitaxial sheet inewo mamwe maitiro ekushandisa mumunda wemasero ezuva.
4. Kufungidzira kwezvokurapa: Mumichina yekufungidzira yezvokurapa (yakadai seCT, MRI, nezvimwewo), yekuona nekufungidzira.
5. Sensor network: mukutarisa kwezvakatipoteredza uye kuona gasi, maitiro akawanda anogona kuongororwa panguva imwe chete.
6. Indasitiri otomatiki: inoshandiswa mumashini ekuona masisitimu kutarisa mamiriro uye mhando yezvinhu pamutsetse wekugadzira.
Mune ramangwana, zvinhu zveInGaAs epitaxial substrate zvicharamba zvichivandudzika, kusanganisira kuvandudzwa kwephotoelectric kutendeuka kushanda zvakanaka uye kuderedzwa kwemazinga eruzha. Izvi zvichaita kuti InGaAs epitaxial substrate ishandiswe zvakanyanya mumidziyo yeoptoelectronic, uye kuita kwacho kwakanyanya kunaka. Panguva imwecheteyo, maitiro ekugadzirira acharamba achigadziriswa kuderedza mari uye kuvandudza kushanda, kuitira kuti zvizadzise zvido zvemusika mukuru.
Kazhinji, InGaAs epitaxial substrate inotora nzvimbo yakakosha mumunda we semiconductor zvinhu zvine maitiro ayo akasiyana uye tarisiro yakakura yekushandisa.
XKH inopa magadzirirwo eInGaAs epitaxial mashizha ane zvimiro zvakasiyana uye ukobvu, anofukidza huwandu hwakawanda hwekushandisa kwe optoelectronic zvishandiso, lasers, uye solar maseru. Zvigadzirwa zveXKH zvinogadzirwa nemidziyo yepamusoro yeMOCVD kuti ive nechokwadi chekuita kwepamusoro uye kuvimbika. Panyaya yezvekurongeka, XKH ine huwandu hwakasiyana hwepasirese sosi nzira, iyo inogona kuchinjika kubata huwandu hwemaodha, uye inopa kukosha-akawedzera masevhisi akadai sekunatsiridza uye segmentation. Maitiro ekutumira anobudirira anovimbisa pa-nguva yekuendesa uye kusangana nevatengi zvinodiwa zvemhando uye nguva dzekutumira.