Rutivi rweEpitaxial

200mm 8inch GaN pa substrate yesafire Epi-layer wafer
Chikamu Chidiki Chinosiyana-siyana Chekushanda Kwepamusoro cheRF Acoustic Devices (LNOSiC)
GaN paGirazi 4-Inch: Sarudzo dzeGirazi Dzinogona Kugadziriswa Dzinosanganisira JGS1, JGS2, BF33, uye Ordinary Quartz
AlN-on-NPSS Wafer: Chigadziko cheAluminium Nitride Chinoshanda Zvakanyanya paSubstrate yeSapphire Isina Kupukutwa yekushandiswa kweTemperature Yakakwira, Simba Rakawanda, uye RF
MaWafers eGaN-on-SiC Epitaxial Akagadzirwa (100mm, 150mm) – Sarudzo Dzakawanda dzeSiC Substrate (4H-N, HPSI, 4H/6H-P)
MaWafer eGaN-on-Diamond 4inch 6inch Ukobvu hwese hwe epi (micron) 0.6 ~ 2.5 kana yakagadzirirwa maApplication eHigh-Frequency
GaAs ine simba guru re epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yekurapa ne laser
MaInGaAs epitaxial wafer substrate PD Array photodetector arrays anogona kushandiswa kuLiDAR
2inch 3inch 4inch InP epitaxial wafer substrate APD light detector ye fiber optic communications kana LiDAR
6inch SiC Epitaxiy wafer N/P rudzi rweN/P runogamuchirwa rwakagadzirirwa
Wafer ye4inch SiC Epi yeMOS kana SBD
Silicon-On-Insulator Substrate SOI wafer ine zvikamu zvitatu zveMicroelectronics neRadio Frequency

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