CVD nzira yekugadzira yakakwira kuchena SiC zviwanikwa musilicon carbide synthesis furnace pa1600 ℃.
Kushanda musimboti:
1. Precursor supply. Silicon sosi (semuenzaniso SiH₄) uye kabhoni sosi (semuenzaniso C₃H₈) magasi anosanganiswa muchikamu uye anopinzwa mukamuri yekupindura.
2. Kuora kwekushisa kwepamusoro: Pakupisa kwepamusoro kwe1500 ~ 2300 ℃, kuora kwegasi kunogadzira Si uye C maatomu anoshanda.
3. Surface reaction: Si neC maatomu anoiswa pane substrate surface kuti iite SiC crystal layer.
4. Kukura kweCrystal: Kuburikidza nekutonga kwetembiricha gradient, kuyerera kwegasi uye kudzvanywa, kuti uwane inotungamira kukura pamwe ne c axis kana axis.
Key parameters:
· Tembiricha: 1600 ~ 2200 ℃ (> 2000 ℃ ye4H-SiC)
Kudzvinyirira: 50 ~ 200mbar (yakaderera kudzvinyirira kuderedza gasi nucleation)
· Gasi reshiyo: Si/C≈1.0~1.2 (kudzivisa Si kana C kupfumisa kukanganisa)
Main features:
(1) Hunhu hwekristaro
Low defect density: microtubule density <0.5cm ⁻², dislocation density <10⁴ cm⁻².
Polycrystalline type control: inogona kukura 4H-SiC (mainstream), 6H-SiC, 3C-SiC uye mamwe marudzi ekristaro.
(2) Equipment performance
Kugadzikana kwekushisa kwepamusoro: graphite induction heat kana kuramba kupisa, tembiricha> 2300 ℃.
Uniformity kudzora: tembiricha kuchinja ± 5 ℃, kukura mwero 10 ~ 50μm/h.
Gasi system: High precision mass flowmeter (MFC), gasi kuchena ≥99.999%.
(3) Zvakanakira zvemichina
Kuchena kwepamusoro: Kusachena kwemashure <10¹⁶ cm⁻³ (N, B, nezvimwewo).
Yakakura saizi: Tsigira 6 "/8" SiC substrate kukura.
(4) Simba rekushandisa uye mari
Kushandiswa kwesimba kwakanyanya (200 ~ 500kW · h pachoto), kuverenga 30% ~ 50% yemutengo wekugadzira weSiC substrate.
Core applications:
1. Simba semiconductor substrate: SiC MOSFETs yekugadzira motokari dzemagetsi uye photovoltaic inverters.
2. Rf device: 5G base station GaN-on-SiC epitaxial substrate.
3.Extreme environment devices: high temperature sensors for aerospace uye nuclear power plant.
Technical specification:
| Tsanangudzo | Details |
| Dimensions (L × W × H) | 4000 x 3400 x 4300 mm kana kugadzirisa |
| Furnace chamber diameter | 1100mm |
| Loading capacity | 50kg |
| Muganhu vacuum degree | 10-2Pa (2h mushure mekunge pombi yemamorekuru yatanga) |
| Chamber pressure rise rate | ≤10Pa/h (mushure mekuverengera) |
| Lower choto chivharo chinosimudza sitiroko | 1500mm |
| Kupisa nzira | Induction kupisa |
| Iyo yakanyanya tembiricha muchoto | 2400°C |
| Kupisa simba rekupa | 2X40kW |
| Tembiricha kuyerwa | Maviri-mavara infrared tembiricha kuyerwa |
| Tembiricha range | 900 ~ 3000 ℃ |
| Temperature control kururama | ±1°C |
| Kudzora kudzvinyirira siyana | 1 ~ 700mbar |
| Pressure Control Kururama | 1 ~ 5mbar ±0.1mbar; 5 ~ 100mbar ± 0.2mbar; 100 ~ 700mbar ± 0.5mbar |
| Loading nzira | Lower loading; |
| Optional configuration | Kaviri tembiricha yekuyera nzvimbo, kuburitsa forklift. |
XKH Services:
XKH inopa yakazara-kutenderera masevhisi esilicon carbide CVD furnaces, zvinosanganisira gadziriso yemidziyo (tembiricha yenzvimbo dhizaini, gasi system configuration), process development (crystal control, defect optimization), technical training (operation and maintenance) uye after-sales support (spare parts supply of key parts, remote diagnosis) kubatsira vatengi kuwana yepamusoro-mhando yeSiC substrate mass production. Uye ipa maitiro ekusimudzira masevhisi kuti arambe achivandudza goho rekristaro nekukura kwakanaka.
Detailed Diagram
