8Inch 200mm 4H-N SiC Wafer Conductive dummy research giredhi

Tsanangudzo Pfupi

Sezvo zvekufambisa, simba uye misika yemaindasitiri inoshanduka, kudiwa kweakavimbika, epamusoro pekuita emagetsi emagetsi anoramba achikura. Kuti isangane nezvinodiwa zvekuvandudzwa semiconductor kuita, vagadziri vemidziyo vari kutarisa kune yakakura bandgap semiconductor zvinhu, seyedu 4H SiC Prime Giredhi portfolio ye4H n -type silicon carbide (SiC) mawafers.

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Nekuda kwekusiyana kwayo kwemuviri uye zvemagetsi zvivakwa, 200mm SiC wafer semiconductor zvinhu zvinoshandiswa kugadzira yakakwirira-inoshanda, yakakwirira-tembiricha, inodzivirira mwaranzi, uye yakakwirira-frequency zvigadzirwa zvemagetsi. 8inch SiC substrate mutengo uri kudzikira zvishoma nezvishoma sezvo tekinoroji inowedzera uye kudiwa kuri kukura. Zvichangobva kuitika tekinoroji zvinotungamira mukugadzirwa kwehukuru hwe200mm SiC wafers. Iwo mabhenefiti makuru eSiC wafer semiconductor zvinhu mukuenzanisa neSi neGaAs wafers: Iyo yemagetsi munda simba re4H-SiC panguva yekuputsika kweavalanche inopfuura hurongwa hwehukuru hwepamusoro kupfuura hunoenderana kukosha kweSi neGaAs. Izvi zvinotungamira mukudzikira kwakanyanya mune-nyika resistivity Ron. Yakaderera pa-state resistivity, yakasanganiswa nepamusoro-soro density uye yekupisa conductivity, inobvumira kushandiswa kwekufa kudiki kwemagetsi emagetsi. Iyo yakakwira yekupisa conductivity yeSiC inoderedza kupisa kwekupisa kwechip. Iyo yemagetsi zvimiro zvemidziyo yakavakirwa eSiC wafers yakagadzikana zvakanyanya nekufamba kwenguva uye pane tembiricha yakagadzikana, iyo inovimbisa kuvimbika kwakanyanya kwezvigadzirwa. Silicon carbide inopesana zvakanyanya neradiation yakaoma, iyo isingaderedze zvemagetsi zvimiro zvechip. Iyo yakanyanya kudzikisira tembiricha yekushandisa yekristaro (inopfuura 6000C) inokutendera iwe kuti ugadzire yakavimbika michina yemamiriro ekushanda akaomarara uye yakakosha maapplication. Parizvino, isu tinokwanisa kupa diki batch 200mmSiC wafers zvakatsiga uye nekuenderera uye nekuva nezvimwe stock mudura.

Tsanangudzo

Number	Item	Unit	Kugadzirwa	Tsvakurudzo	Dummy
1. Parameters
1.1	polytype	--	4H	4H	4H
1.2	pamusoro pekutarisa	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. Magetsi parameter
2.1	dopant	--	n-mhando Nitrogen	n-mhando Nitrogen	n-mhando Nitrogen
2.2	resistivity	uyo ·cm	0.015~0.025	0.01~0.03	NA
3. Mechanical parameter
3.1	dhayamita	mm	200±0.2	200±0.2	200±0.2
3.2	ukobvu	μm	500±25	500±25	500±25
3.3	Notch orientation	°	[1- 100]±5	[1- 100]±5	[1- 100]±5
3.4	Notch Depth	mm	1~1.5	1~1.5	1~1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Bow	μm	-25~25	-45~45	-65~65
3.8	Warp	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Chimiro
4.1	micropipe density	e/cm2	≤2	≤10	≤50
4.2	metal content	maatomu/cm2	≤1E11	≤1E11	NA
4.3	TSD	e/cm2	≤500	≤1000	NA
4.4	BPD	e/cm2	≤2000	≤5000	NA
4.5	TED	e/cm2	≤7000	≤10000	NA
5. Hunhu hwakanaka
5.1	pamberi	--	Si	Si	Si
5.2	pamusoro pekupedzisira	--	Si-face CMP	Si-face CMP	Si-face CMP
5.3	particle	ea/wafer	≤100(saizi≥0.3μm)	NA	NA
5.4	scratch	ea/wafer	≤5, Hurefu Hwose≤200mm	NA	NA
5.5	Edge chips/indents/cracks/stains/contamination	--	Hapana	Hapana	NA
5.6	Polytype nzvimbo	--	Hapana	Nzvimbo ≤10%	Nzvimbo ≤30%
5.7	pamberi pemaka	--	Hapana	Hapana	Hapana
6. Back quality
6.1	back finish	--	C-chiso MP	C-chiso MP	C-chiso MP
6.2	scratch	mm	NA	NA	NA
6.3	Back defects kumucheto machipisi/indents	--	Hapana	Hapana	NA
6.4	Back roughness	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Kumaka kumashure	--	Notch	Notch	Notch
7. Mupendero
7.1	kumucheto	--	Chamfer	Chamfer	Chamfer
8. Package
8.1	kurongedza	--	Epi-yakagadzirira ne vacuum kurongedza	Epi-yakagadzirira ne vacuum kurongedza	Epi-yakagadzirira ne vacuum kurongedza
8.2	kurongedza	--	Multi-wafer kurongedza makaseti	Multi-wafer kurongedza makaseti	Multi-wafer kurongedza makaseti