6inch GaN-On-Sapphire
150mm 6inch GaN paSilicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer
Wafer yesafire substrate ine mainches matanhatu imhando yepamusoro ye semiconductor ine gallium nitride (GaN) yakadyarwa pasafire substrate. Iine hunhu hwakanaka hwekufambisa zvinhu zvemagetsi uye yakakodzera kugadzira michina ye semiconductor ine simba guru uye ine frequency yakakwira.
Nzira yekugadzira: Maitiro ekugadzira anosanganisira kukura maGaN layers pasapphire substrate uchishandisa matekiniki epamusoro akadai se metal-organic chemical vapor deposition (MOCVD) kana molecular beam epitaxy (MBE). Maitiro ekuisa magirazi aya anoitwa pasi pemamiriro ezvinhu akarongwa kuti pave nechokwadi chekuti crystal yakakwira uye firimu rakafanana.
Mashandisirwo e6inch GaN-On-Sapphire: Machipisi e6-inch sapphire substrate anoshandiswa zvakanyanya mukukurukurirana kwe microwave, radar systems, wireless technology uye optoelectronics.
Mamwe maapplication akajairika anosanganisira
1. Rf simba rekuwedzera simba
2. Indasitiri yemwenje ye LED
3. Midziyo yekutaurirana isina waya
4. Zvishandiso zvemagetsi munzvimbo inodziya zvakanyanya
5. Zvishandiso zvemagetsi zveOptoelectronic
Zvimiro zvechigadzirwa
- Saizi: Dhayamita ye substrate ine masendimita matanhatu (anenge 150 mm).
- Hunhu hwepamusoro: Pamusoro pacho pakanyatsokwenenzverwa kuti pave nehunhu hwakanaka hwegirazi.
- Ukobvu: Ukobvu hweGaN layer hunogona kugadziriswa zvichienderana nezvinodiwa.
- Kurongedza: Substrate yacho yakanyatsozadzwa nezvinhu zvinodzivirira static kudzivirira kukuvara panguva yekufambisa.
- Mipendero yekuisa: Substrate ine mipendero chaiyo yekuisa iyo inobatsira kurongeka uye kushanda panguva yekugadzirira mudziyo.
- Mamwe ma parameter: Ma parameter chaiwo akadai sekutetepa, resistivity uye doping concentration anogona kugadziriswa zvichienderana nezvinodiwa nevatengi.
Nekuda kwehunhu hwavo hwepamusoro uye mashandisirwo akasiyana-siyana, mawafer esapphire substrate ane mativi matanhatu isarudzo yakavimbika yekugadzira zvishandiso zve semiconductor zvinoshanda zvakanyanya mumaindasitiri akasiyana-siyana.
| Substrate | 6” 1mm <111> p-type Si | 6” 1mm <111> p-type Si |
| Epi ThickAvg | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| uta | +/-45um | +/-45um |
| Kutsemuka | <5mm | <5mm |
| BV yakatwasuka | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT ThickAvg | 20-30nm | 20-30nm |
| Chivharo cheInsitu SiN | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Kufamba | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sikweya (<2%) | <330ohm/sikweya (<2%) |
Dhayagiramu Yakadzama
