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6 inch conductive single crystal SiC pa polycrystalline SiC composite substrate Dhayamita 150mm P mhando N mhando

6 inch conductive single crystal SiC pa polycrystalline SiC composite substrate Dhayamita 150mm P type N type Mufananidzo Unoratidzwa
  • 6 inch conductive single crystal SiC pa polycrystalline SiC composite substrate Dhayamita 150mm P mhando N mhando
  • 6 inch conductive single crystal SiC pa polycrystalline SiC composite substrate Dhayamita 150mm P mhando N mhando

Tsananguro pfupi:

Iyo ine mainch matanhatu conductive monocrystalline SiC iri pa polycrystalline SiC composite substrate inomiririra mhinduro itsva yesilicon carbide (SiC) yakagadzirirwa zvishandiso zvemagetsi zvine simba guru, tembiricha yepamusoro, uye frequency yepamusoro. Iyi substrate ine single-crystal SiC active layer yakabatana nepolycrystalline SiC base kuburikidza nemaitiro akasarudzika, ichibatanidza hunhu hwemagetsi hwepamusoro hwe monocrystalline SiC nemitengo yakanakira polycrystalline SiC.
Zvichienzaniswa nemidziyo yemazuva ano yeSiC ine monocrystalline yakazara, iyo SiC ine monocrystalline ye6-inch inofambisa magetsi papolycrystalline SiC composite substrate inochengetedza kufamba kwemaerekitironi kwakakwira uye kuramba simba rakawanda uku ichideredza zvakanyanya mari yekugadzira. Saizi yayo yewafer ye6-inch (150 mm) inoita kuti ienderane nemitsetse yekugadzira yesemiconductor iripo, zvichiita kuti kugadzirwa kuwedzere. Pamusoro pezvo, dhizaini yekufambisa magetsi inobvumira kushandiswa zvakananga mukugadzira zvishandiso zvemagetsi (semuenzaniso, MOSFETs, diodes), kubvisa kudiwa kwekuwedzera maitiro ekushandisa doping uye kurerutsa mashandiro ekugadzira.


Zvinhu zvirimo

Magadzirirwo ehunyanzvi

Saizi:

6 inchi

Dhayamita:

150 mm

Ukobvu:

400-500 μm

MaParamita eMonocrystalline SiC Film

Mhando yePolytype:

4H-SiC kana 6H-SiC

Kuisa Doping Concentration:

1×10¹⁴ - 1×10¹⁸ cm⁻³

Ukobvu:

5-20 μm

Kuramba kweShiti:

10-1000 Ω/sq

Kufamba kweElectron:

800-1200 cm²/Vs

Kufamba kweMakomba:

100-300 cm²/Vs

MaParameter ePolycrystalline SiC Buffer Layer

Ukobvu:

50-300 μm

Kufambisa kwekupisa:

150-300 W/m·K

Zvikamu zveMonocrystalline SiC Substrate

Mhando yePolytype:

4H-SiC kana 6H-SiC

Kuisa Doping Concentration:

1×10¹⁴ - 1×10¹⁸ cm⁻³

Ukobvu:

300-500 μm

Saizi yeZviyo:

> 1 mm

Kuomarara kwePamusoro:

Kureba kweRMS < 0.3 mm

Zvivakwa zveMakanika neMagetsi

Kuoma:

9-10 Mohs

Simba Rinodzvinyirira:

3-4 GPa

Simba reKusimba:

0.3-0.5 GPa

Simba reMunda weKuparara:

> 2 MV/cm

Kushivirira Kwese Kwemushonga:

> 10 Mrad

Kuramba Kwemhedzisiro Yechiitiko Chimwe Chete:

> 100 MeV·cm²/mg

Kufambisa kwekupisa:

150-380 W/m·K

Kushanda Kwekupisa Range:

-55 kusvika 600°C

 

Hunhu Hunokosha

Iyo ine mainch matanhatu conductive monocrystalline SiC iri pa polycrystalline SiC composite substrate inopa chiyero chakasiyana chechimiro uye mashandiro, zvichiita kuti ive yakakodzera munzvimbo dzinodiwa dzemaindasitiri:

1. Kushanda Kwemari: Polycrystalline SiC base inoderedza mitengo zvakanyanya kana tichienzanisa ne full-monocrystalline SiC, nepo monocrystalline SiC active layer ichivimbisa kushanda kwemuchina, uye yakakodzera kushandiswa kunonyanya kudhura.

2. Hunhu Hwakanaka Hwemagetsi: Chigadziko cheSiC chemonocrystalline chinoratidza kufamba kwakanyanya kwekutakura (>500 cm²/V·s) uye defect density yakaderera, zvichitsigira mashandiro emuchina une frequency yakakwira uye une simba rakawanda.

3. Kugadzikana Kwekupisa Kwakakwirira: Kudzivirira kupisa kwakanyanya kweSiC (>600°C) kunoita kuti substrate yacho irambe yakasimba mumamiriro ezvinhu akaoma, zvichiita kuti ive yakakodzera mota dzemagetsi uye maindasitiri.

Saizi yeWafer Yakaenzana ye4.6-inch: Kana tichienzanisa nemidziyo yeSiC ye4-inch, fomati ye6-inch inowedzera goho remachipisi neanopfuura 30%, zvichideredza mitengo yemuchina wega wega.

5. Kugadzira Kwemagetsi: Matanda emhando yeN kana P akagadzirwa kare anoderedza matanho ekuisa maion mukugadzira michina, zvichivandudza kushanda zvakanaka kwekugadzira uye goho.

6. Kutarisirwa Kwepamusoro Kwekupisa: Kufambiswa kwekupisa kwe polycrystalline SiC base (~120 W/m·K) kunosvika pa monocrystalline SiC, zvichigadzirisa matambudziko ekupisa mumidziyo ine simba guru.

Hunhu uhwu hunoisa SiC ine ma inch matanhatu inofambisa magetsi inoburitsa simba pamusoro peSiC ine ma crystalline composite substrate semhinduro yemakwikwi kumaindasitiri akadai sesimba rinogona kudzokororwa, kutakurwa kwezvitima, uye ndege.

Zvikumbiro Zvikuru

Iyo 6-inch conductive monocrystalline SiC iri pa polycrystalline SiC composite substrate yakashandiswa zvinobudirira munzvimbo dzinoverengeka dzinodiwa zvakanyanya:
1.Magetsi eMotokari dzeMagetsi: Anoshandiswa mumaSiC MOSFETs nemadiode ane simba guru kusimudzira kushanda zvakanaka kweinverter uye kuwedzera huwandu hwebhatiri (semuenzaniso, maTesla, maBYD models).

2. Madhiraivha eMotokari dzeIndustrial: Anogonesa mamodule emagetsi anodziya zvakanyanya, anochinja-chinja-frequency, achideredza kushandiswa kwesimba mumichina inorema uye maturbine emhepo.

3. MaInverter ePhotovoltaic: Midziyo yeSiC inovandudza mashandiro ekushandura simba rezuva (>99%), nepo substrate yakagadzirwa ichideredzawo mitengo yesystem.

4. Kutakurwa kweNjanji: Inoshandiswa muzvigadziri zve traction zvemasisitimu echitima anomhanya zvakanyanya uye epasi pevhu, zvichipa simba rekudzivirira magetsi (>1700V) uye zvinhu zvidiki.

5.Nzvimbo yemuchadenga: Yakanakira masisitimu emagetsi esatellite uye macircuit ekudzora injini dzendege, anokwanisa kutsungirira tembiricha yakanyanyisa uye mwaranzi.

Mukugadzira zvinhu zvinobudirira, monocrystalline SiC ine 6-inch conductive ine polycrystalline SiC composite substrate inoenderana zvizere nemaitiro akajairwa eSiC device (semuenzaniso, lithography, etching), isingade mari yekuwedzera.

Mabasa eXKH

XKH inopa rutsigiro rwakakwana rwe6-inch conductive monocrystalline SiC pa polycrystalline SiC composite substrate, ichifukidza R&D kusvika pakugadzirwa kwakawanda:

1. Kugadzirisa: Ukobvu hwe monocrystalline layer hunogadziriswa (5–100 μm), doping concentration (1e15–1e19 cm⁻³), uye crystal orientation (4H/6H-SiC) kuti ienderane nezvinodiwa zvakasiyana-siyana zvemudziyo.

2. Kugadzira Wafer: Kuwanikwa kwemidziyo yakawanda ine mativi matanhatu emukati ine masevhisi ekutetepa kwemashure uye simbi kuti isanganisirwe neplug-and-play.

3. Kusimbiswa kweTechnical: Kunosanganisira XRD crystallinity analysis, Hall effect testing, uye tembiricha resistance measurement kuti kukurumidze kuumbwa kwezvinhu.

4. Kugadzira Zvifananidzo Nokukurumidza: Samples dze 2- kusvika 4-inch (maitiro akafanana) emasangano ekutsvagisa kuti akurumidze kutenderera kwebudiriro.

5. Kuongorora Kukundikana & Kugadzirisa: Mhinduro dzepamusoro-soro dzekugadzirisa matambudziko (semuenzaniso, zvikanganiso zve epitaxial layer).

Chinangwa chedu ndechekugadzira monocrystalline SiC ine 6-inch conductive substrate pa polycrystalline SiC composite substrate senzira inodiwa yeSiC power electronics, ichipa rutsigiro kubva pakugadzira prototyping kusvika pakugadzira volume.

Mhedziso

Iyo ine ma inch 6-inch conductive monocrystalline SiC iri pa polycrystalline SiC composite substrate inoita kuti pave nekubudirira pakati pekushanda uye mutengo kuburikidza nechimiro chayo chitsva che mono/polycrystalline hybrid. Sezvo mota dzemagetsi dzichiwedzera uye Industry 4.0 ichifambira mberi, iyi substrate inopa hwaro hwakavimbika hwemagetsi emagetsi echizvarwa chinotevera. XKH inogamuchira kushanda pamwe chete kuti iongorore zvakanyanya kugona kweSiC tekinoroji.

6inch kristaro imwe chete SiC pa polycrystalline SiC composite substrate 2
6inch kristaro imwe chete SiC pa polycrystalline SiC composite substrate 3
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