4H/6H-P 6inch SiC wafer Zero MPD giredhi Kugadzira Giredhi Dummy Giredhi

Tsanangudzo Pfupi:

Iyo 4H / 6H-P mhando 6-inch SiC wafer ndeye semiconductor zvinhu zvinoshandiswa mukugadzira zvigadzirwa zvemagetsi, inozivikanwa nekunaka kwayo yekupisa conductivity, yakakwirira breakdown voltage, uye kuramba kune tembiricha yakanyanya uye ngura. Iyo yekugadzira-giredhi uye Zero MPD (Micro Pipe Defect) giredhi inovimbisa kuvimbika kwayo uye kugadzikana mune yakakwirira-inoshanda magetsi emagetsi. Kugadzira-giredhi wafers anoshandiswa kugadzira yakakura-chiyero chigadziriso chine hutsinye hwemhando yekudzora, nepo dummy-giredhi wafers anonyanya kushandiswa kugadzirisa debugging uye kuyedza michina. Iwo akatanhamara zvimiro zveSiC zvinoita kuti ishandiswe zvakanyanya mukupisa-kupisa, yakakwira-voltage, uye yakakwirira-frequency zvigadzirwa zvemagetsi, senge magetsi emagetsi uye RF zvishandiso.

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Product Detail

Product Tags

4H/6H-P Type SiC Composite Substrates Common parameter tafura

6 inch dhayamita Silicon Carbide (SiC) Substrate Tsanangudzo

Giredhi			Zero MPD KugadzirwaGiredhi (Z Giredhi)	Standard ProductionGiredhi (P Giredhi)	Dummy Grade (D Giredhi)
Diameter			145.5 mm ~ 150.0 mm
Ukobvu			350 μm ± 25 μm
Wafer Orientation			-Offakisi: 2.0°-4.0° kuenda ku [1120] ± 0.5° nokuda kwe4H/6H-P, Paakisi:〈111〉± 0.5° nokuda kwe3C-N
Micropipe Density			0 masendimita-2
Resistivity	p-mhando 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mhando 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Yekutanga Flat Oriental		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Primary Flat Length			32.5 mm ± 2.0 mm
Secondary Flat Length			18.0 mm ± 2.0 mm
Secondary Flat Orientation			Silicon yakatarisana kumusoro: 90° CW. kubva Prime flat ± 5.0 °
Kusabatanidzwa kumucheto			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kukasharara			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Chiedza			Hapana		Kureba kwekuwedzera ≤ 10 mm, kureba kamwe≤2 mm
Hex Plates By High Intensity Chiedza			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Nzvimbo NeKusimba Kwakanyanya Chiedza			Hapana		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Yakawedzerwa nzvimbo ≤3%
Silicon Surface Scratches By High Intensity Chiedza			Hapana		Cumulative kureba≤1×wafer dhayamita
Edge Chips High By Intensity Chiedza			Hapana anotenderwa ≥0.2mm hupamhi nekudzika		5 inotenderwa, ≤1 mm imwe neimwe
Silicon Surface Kusvibiswa NeKunyanya Kusimba			Hapana
Packaging			Multi-wafer Cassette kana Single Wafer Container

Notes:

※ Miganho yekukanganisa inoshanda kune yese wafer pamusoro kunze kweiyo yekumusoro nzvimbo yekusarudzika. # Iwo mavanga anofanirwa kutariswa paSi face o

Iyo 4H/6H-P mhando 6-inch SiC wafer ine Zero MPD giredhi uye kugadzira kana dummy giredhi inoshandiswa zvakanyanya mumhando yepamusoro zvemagetsi zvikumbiro. Yayo yakanaka kwazvo yekupisa yekupisa, yakakwira breakdown voltage, uye kuramba kune dzakaomarara nharaunda inoita kuti ive yakanakira magetsi emagetsi, akadai seakakwira-voltage switch uye inverters. Iyo Zero MPD giredhi inovimbisa kushoma kuremara, yakakosha kune yakakwirira-yakavimbika michina. Kugadzira-giredhi wafers anoshandiswa muhukuru-hukuru kugadzirwa kwemagetsi zvishandiso uye RF zvikumbiro, uko kuita uye nemazvo kwakakosha. Dummy-giredhi wafers, kune rumwe rutivi, anoshandiswa kugadzirisa maitiro, kuyedzwa kwemidziyo, uye prototyping, ichigonesa kuenderana kwehutongi munzvimbo dzekugadzira semiconductor.

Zvakanakira zveN-mhando SiC composite substrates inosanganisira

High Thermal Conductivity: The 4H/6H-P SiC wafer inonyatso bvisa kupisa, ichiita kuti ive yakakodzera kune yakakwirira-tembiricha uye yakakwirira-simba magetsi ekushandisa.
High Breakdown Voltage: Kugona kwayo kubata yakakwirira voltages pasina kukundikana kunoita kuti ive yakanaka kune magetsi emagetsi uye yakakwirira-voltage switching application.
Zero MPD (Micro Pipe Defect) Giredhi: Minimal defect density inovimbisa kuvimbika kwepamusoro uye kuita, yakakosha pakuda midziyo yemagetsi.
Kugadzira-Giredhi reMisa Kugadzira: Inokodzera kugadzirwa kwakakura kwepamusoro-kuita semiconductor zvishandiso zvine stringent quality standards.
Dummy-Giredhi Yekuyedza uye Calibration: Inogonesa optimization yemaitiro, kuyedza michina, uye prototyping pasina kushandisa yakakwira-mutengo wekugadzira-giredhi wafers.

Pakazere, 4H/6H-P 6-inch SiC wafers ane Zero MPD giredhi, giredhi rekugadzira, uye dummy giredhi zvinopa zvakakosha mabhenefiti ekusimudzira epamusoro-kuita zvemagetsi zvishandiso. Aya mawaferi anonyanya kubatsira mumashandisirwo anoda kushanda kwepamusoro-tembiricha, kusimba kwesimba, uye kushandurwa kwesimba kwakanaka. Iyo Zero MPD giredhi inovimbisa hurema hudiki hwekuvimbika uye yakagadzikana dhizaini mashandiro, nepo ekugadzira-giredhi wafers anotsigira hukuru hwekugadzira neakasimba emhando yekudzora. Dummy-giredhi wafers inopa inodhura-inoshanda mhinduro yekugadzirisa mashandiro uye kuenzanisa kwemidziyo, zvichiita kuti ive yakakosha pakugadzirwa kwepamusoro-chaiyo semiconductor.