2inch 3inch 4inch InP epitaxial wafer substrate APD light detector ye fiber optic communications kana LiDAR
Akakosha maficha eInP laser epitaxial sheet anosanganisira
1. Band gap maitiro: InP ine yakamanikana bhendi gap, iyo yakakodzera yenguva refu-wave infrared kuona chiedza, kunyanya muwavelength renji ye1.3μm kusvika 1.5μm.
2. Optical performance: InP epitaxial film ine good optical performance, yakadai sesimba rinopenya uye kunze kwehuwandu hwehuwandu hwehuwandu hwehuwandu hwakasiyana-siyana. Semuenzaniso, pa480 nm, simba rinopenya uye kunze kwehuwandu hwehuwandu huri 11.2% uye 98.8%, zvichiteerana.
3. Carrier dynamics: InP nanoparticles (NPs) inoratidza kaviri exponential decay maitiro panguva epitaxial kukura. Iyo inokurumidza kuora nguva inonzi inotakura jekiseni muInGaAs layer, nepo nguva inononoka kuora ine hukama nekubatanidzwazve kwekutakura muInP NPs.
4. Yakakwira tembiricha maitiro: AlGaInAs/InP quantum tsime zvinhu zvine mashandiro akanaka pakupisa kwepamusoro, izvo zvinogona kunyatso kudzivirira kubuda kwerukova uye kuvandudza tembiricha yepamusoro yelaser.
5. Nzira yekugadzira: InP epitaxial sheets inowanzokura pa substrate ne molecular beam epitaxy (MBE) kana metal-organic chemical vapor deposition (MOCVD) teknolojia yekuwana mafirimu emhando yepamusoro.
Aya maitiro anoita kuti InP laser epitaxial wafers ave neakakosha maapplication mu optical fiber kutaurirana, quantum kiyi yekugovera uye kure kure yekuona yekuona.
Iwo makuru mashandisirwo eInP laser epitaxial mahwendefa anosanganisira
1. Photonics: InP lasers uye ma detectors anoshandiswa zvakanyanya mu optical communications, data centers, infrared imaging, biometrics, 3D sensing uye LiDAR.
2. Telecommunications: InP zvinhu zvine maitiro anokosha mukubatanidzwa kukuru kwesilicon-based long-wavelength lasers, kunyanya mu optical fiber communications.
3. Infrared lasers: Zvishandiso zveInP-based quantum well lasers mukati me-infrared band (senge 4-38 microns), kusanganisira kunzwa kwegasi, kuputika kwekuona uye infrared imaging.
4. Silicon photonics: Kuburikidza nehterogeneous integration teknolojia, iyo InP laser inotamirwa kune silicon-based substrate kuti iite multifunctional silicon optoelectronic integration platform.
5.High performance lasers: InP zvinhu zvinoshandiswa kugadzira lasers yepamusoro, yakadai seInGaAsP-InP transistor lasers ine wavelength ye1.5 microns.
XKH inopa customized InP epitaxial wafers ane maitiro akasiyana-siyana uye makobvu, anovhara zvakasiyana-siyana zvekushandisa zvakadai se optical communications, sensors, 4G / 5G base stations, nezvimwewo. Zvigadzirwa zve XKH zvinogadzirwa uchishandisa michina yeMOCVD yepamusoro kuti ione kushanda kwepamusoro uye kuvimbika. Panyaya yezvekurongeka, XKH ine nzira dzakasiyana-siyana dzepasi rose, inogona kuchinjika kubata huwandu hwemaodha, uye inopa kukosha-akawedzera masevhisi akadai sekutetepa, kupatsanura, nezvimwe. kunaka uye nguva dzekutumira. Mushure mekusvika, vatengi vanogona kuwana yakazara tekinoroji rutsigiro uye mushure-yekutengesa sevhisi kuona kuti chigadzirwa chinoiswa mukushandiswa zvakanaka.