2 inch 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Hukobvu 350um 430um 500um
Kutsanangurwa kwemaitiro akasiyana
| Orientation | C(0001)-Axis | R(1-102)-Axis | M(10-10) -Axis | A(11-20)-Axis | ||
| Pfuma yenyama | Iyo C axis ine crystal light, uye mamwe maaxes ane negative light.Ndege C yakati sandara, zviri nani kuchekwa. | R-ndege yakaoma zvishoma pane A. | M ndege inotsikwa serrated, haisi nyore kucheka, nyore kucheka. | Kuomarara kweA-ndege kwakakwira zvakanyanya kupfuura iyo yeC-ndege, iyo inoratidzwa mukupokana kwekupfeka, kuramba kwekutanga uye kuomarara kwakanyanya;Side A-ndege indege ine zigzag, iri nyore kucheka; | ||
| Applications | C-oriented sapphire substrates anoshandiswa kukura III-V uye II-VI akaiswa mafirimu, akadai segallium nitride, anogona kugadzira yebhuruu LED zvigadzirwa, laser diodes, uye infrared detector application. | R-yakatarisana substrate kukura kweakasiyana akaiswa silicon extrasystals, anoshandiswa mune microelectronics akabatanidzwa maseketi. | Inonyanya kushandiswa kurima asiri-polar/semi-polar GaN epitaxial mafirimu kuti avandudze kupenya kwakanaka. | A-yakatarisana neiyo substrate inoburitsa yunifomu yemvumo / yepakati, uye yakakwira dhigirii yekuvharisa inoshandiswa muhybrid microelectronics tekinoroji.Yepamusoro tembiricha superconductors inogona kugadzirwa kubva kuA-base elongated makristasi. | ||
| Processing capacity | Pateni yeSapphire Substrate (PSS): Muchimiro cheKukura kana Etching, nanoscale chaiyo yakajairwa microstructure mapatani akagadzirwa uye anogadzirwa pasafire substrate kudzora mwenje unobuda fomu yeLED, uye kuderedza kukanganisa kwakasiyana pakati peGaN inokura pasafire substrate. , kunatsiridza epitaxy quality, uye kuwedzera mukati quantum kunyatsoshanda kwe LED uye kuwedzera kushanda kwekubvisa chiedza. Uye zvakare, sapphire prism, girazi, lenzi, gomba, koni uye zvimwe zvimiro zvikamu zvinogona kugadzirwa zvinoenderana nezvinodiwa nevatengi. | |||||
| Property declaration | Density | Kuoma | melt point | Refractive index (inooneka uye infrared) | Transmittance (DSP) | Dielectric constant |
| 3.98g/cm3 | 9(mohs) | 2053 ℃ | 1.762~1.770 | ≥85% | 11.58@300K paC axis (9.4 at A axis) | |
Detailed Diagram
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