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2 inch 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Hukobvu 350um 430um 500um

2 inch 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Ukobvu 350um 430um 500um Featured Image
  • 2 inch 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Hukobvu 350um 430um 500um
  • 2 inch 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Hukobvu 350um 430um 500um
  • 2 inch 50.8mm Sapphire Wafer C-Plane M-ndege R-ndege A-ndege Hukobvu 350um 430um 500um

Tsanangudzo Pfupi:

Sapphire chinhu chemusanganiswa wakasarudzika wemuviri, makemikari uye optical zvimiro, izvo zvinoita kuti zvirambe zvichidzivirira kupisa kwakanyanya, kuvhunduka kwemafuta, kukukurwa kwemvura nejecha, uye kukwenya.


Product Detail

Product Tags

Kutsanangurwa kwemaitiro akasiyana

Orientation

C(0001)-Axis

R(1-102)-Axis

M(10-10) -Axis

A(11-20)-Axis
Pfuma yenyama

Iyo C axis ine crystal light, uye mamwe maaxes ane negative light. Ndege C yakati sandara, zviri nani kuchekwa.

R-ndege yakaoma zvishoma pane A.

 M ndege inotsikwa serrated, haisi nyore kucheka, nyore kucheka. Kuomarara kweA-ndege kwakakwira zvakanyanya kupfuura iyo yeC-ndege, iyo inoratidzwa mukupokana kwekupfeka, kuramba kwekutanga uye kuomarara kwakanyanya; Side A-ndege indege ine zigzag, iri nyore kucheka;
Applications

C-oriented sapphire substrates anoshandiswa kukura III-V uye II-VI akaiswa mafirimu, akadai segallium nitride, anogona kugadzira yebhuruu LED zvigadzirwa, laser diodes, uye infrared detector application.
Izvi zvinonyanya kuitika nekuti nzira yekukura kwekristaro yesafiro pamwe neC-axis yakakura, mutengo wakaderera, hunhu hwemuviri nemakemikari hwakagadzikana, uye tekinoroji ye epitaxy paC-ndege yakakura uye yakagadzikana.

R-yakatarisana substrate kukura kweakasiyana akaiswa silicon extrasystals, anoshandiswa mune microelectronics akabatanidzwa maseketi.
Uye zvakare, yakakwira-kumhanya yakasanganiswa maseketi uye kudzvanywa sensors inogona zvakare kuumbwa mukuita kwekugadzirwa kwemafirimu epitaxial silicon kukura. R-mhando substrate inogonawo kushandiswa mukugadzirwa kwemutobvu, mamwe ma superconducting components, high resistance resistors, gallium arsenide.

 Inonyanya kushandiswa kurima asiri-polar/semi-polar GaN epitaxial mafirimu kuti avandudze kupenya kwakanaka. A-yakatarisana neiyo substrate inoburitsa yunifomu yemvumo / yepakati, uye yakakwira dhigirii yekuvharisa inoshandiswa muhybrid microelectronics tekinoroji. Yepamusoro tembiricha superconductors inogona kugadzirwa kubva kuA-base elongated makristasi.
Processing capacity Pateni yeSapphire Substrate (PSS): Muchimiro cheKukura kana Etching, nanoscale chaiyo yakajairwa microstructure mapatani akagadzirwa uye anogadzirwa pasafire substrate kudzora mwenje unobuda fomu yeLED, uye kuderedza kukanganisa kwakasiyana pakati peGaN inokura pasafire substrate. , kunatsiridza epitaxy quality, uye kuwedzera mukati quantum kunyatsoshanda kwe LED uye kuwedzera kushanda kwekubvisa chiedza.
Uye zvakare, sapphire prism, girazi, lenzi, gomba, koni uye zvimwe zvimiro zvikamu zvinogona kugadzirwa zvinoenderana nezvinodiwa nevatengi.

Property declaration

 Density Kuoma melt point Refractive index (inooneka uye infrared) Transmittance (DSP) Dielectric constant
3.98g/cm3 9(mohs) 2053 ℃ 1.762~1.770 ≥85% 11.58@300K paC axis (9.4 at A axis)

Detailed Diagram

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