150mm 200mm 6inch 8inch GaN paSilicon Epi-layer wafer Gallium nitride epitaxial wafer

Tsanangudzo Pfupi

Iyo 6-inch GaN Epi-layer wafer ndeyepamusoro-mhando semiconductor zvinhu zvine zvidimbu zvegallium nitride (GaN) inokurira pasilicon substrate. Izvo zvinhu zvine zvakanakisa zvekufambisa zvemagetsi zvivakwa uye zvakanakira kugadzira yakakwirira-simba uye yakakwirira-frequency semiconductor zvishandiso.

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Product Detail

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Manufacturing nzira

Maitiro ekugadzira anosanganisira kukura maGaN layers pasafire substrate uchishandisa matekiniki epamusoro akadai sesimbi-organic chemical vapor deposition (MOCVD) kana molecular beam epitaxy (MBE). Iyo deposition process inoitwa pasi pemamiriro akadzorwa kuti ave nechokwadi chepamusoro chekristaro mhando uye yunifomu firimu.

6inch GaN-On-Sapphire application: 6-inch sapphire substrate machipisi anoshandiswa zvakanyanya mumicrowave kutaurirana, radar masisitimu, isina waya tekinoroji uye optoelectronics.

Mamwe maapplication akajairika anosanganisira

1. Rf simba amplifier

2. LED chiedza indasitiri

3. Wireless network yekukurukurirana michina

4. Zvigadzirwa zvemagetsi munzvimbo yakakwirira yekupisa

5. Optoelectronic midziyo

Product specifications

- Saizi: Iyo substrate dhayamita i6 inches (anenge 150 mm).

-Surface quality: Iyo yepamusoro yakakwenenzverwa kuti ipe yakanakisa girazi mhando.

- Ukobvu: Ukobvu hweGaN layer hunogona kugadzirwa zvinoenderana nezvinodiwa chaizvo.

- Packaging: Iyo substrate yakanyatso kurongedzerwa ne-anti-static zvinhu kudzivirira kukuvara panguva yekufambisa.

- Positioning edges: Iyo substrate ine chaiyo yekumisikidza mipendero inogonesa kurongeka uye kushanda panguva yekugadzirira mudziyo.

- Mamwe ma paramita: Yakanangana paramita senge hutete, resistivity uye doping concentration inogona kugadziriswa zvinoenderana nezvinodiwa nevatengi.

Nezvavo zvemhando yepamusoro zvivakwa uye akasiyana mashandisirwo, 6-inch sapphire substrate wafers isarudzo yakavimbika yekuvandudza kwepamusoro-inoshanda semiconductor zvishandiso mumaindasitiri akasiyana.

Substrate	6" 1mm <111> p-mhando Si	6" 1mm <111> p-mhando Si
Epi ThickAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
Bow	+/-45um	+/-45um
Kutsemuka	<5mm	<5mm
Vertical BV	>1000V	>1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG conc.	~10¹³cm^-2	~10¹³cm^-2
Mobility	~ 2000cm²/Vs (<2%)	~ 2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)