12 inch sic super

12 inch sic substrate silicon carbide prime giredhi diameter 300mm yakakura saizi 4h-n yakakodzera kune yakakwira simba rekushongedza

Tsananguro pfupi:

A 12-inch silicon carbide substrate (SIC substrate) yakakura-size, yakakwirira-perform-performance semicononductor substrate yakagadzirwa kubva kune imwe crystal yeiyo silicon carbide. Silicon Carbide (SIC) ibhandi rakakura reMemiconductor zvinhu zvine zvemagetsi zvakanaka, izvo zvinoshandiswa zvakanyanya mukugadzirwa kwemagetsi mune simba remagetsi, nzvimbo yakakwirira uye yakakwirira tembiricha uye yakakwirira tembiricha. Iyo 12-inch (300mm) substrate ndiyo yazvino kurondedzerwa kweSilicon carbide tekinoroji, iyo inogona kuvandudza zvakanyanya kugadzirwa kwekugadzira uye kuderedza mari.

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Chigadzirwa Chinhu

Zvigadzirwa tags

Hunhu hwechigadzirwa

1. Yakakwirira inobata

2. Yakanyanya kuputsa munda simba: Iyo breakown munda Simba pane kagumi iyo yeSilicon, yakakodzera kune yakakwirira-yekumanikidza yekumanikidza.

3.Kunyorwa Kwako Bandgap: Iyo Bandgap ndeye 3.26ev (4h-sic), yakakodzera kupisa kwakanyanya uye yakakwira frequency application.

5. Kugadzikana kwemakemikari: Yakasimba corrosion kuramba, yakagadzikana kuita mune yakanyanya tembiricha uye yakaoma nharaunda.

6. Saizi yakakura: 12 inch (300mm) Substrate, kugadzirisa kugadzirwa kwekugadzira, kuderedza unit mutengo.

7.wiyo urema density: Yakakwirira mhando yekristaro kukura tekinoroji yekukura kuti ive yakaderera kuremara kwehurema uye kukwirira kwakanyanya.

Chigadzirwa chikuru application nzira

1. Simba Magetsi:

Mosfets: Inoshandiswa mumotokari dzemagetsi, motor endhusamo anotyaira uye mashanduri ane simba.

Diodes: yakadai seyinchetky diodes (SBD), inoshandiswa kunyatsoita zvekunyorera uye kuchinjisa zvinhu zvekushandisa.

2. RF zvishandiso:

RF Simba Anifier: Inoshandiswa mu 5G kutaurirana zvigadziko uye Satellite kutaurirana.

Microwave midziyo: yakakodzera kune radar uye isina waya yekutaurirana masisitimu.

3. Mota nyowani idzva:

Magetsi ekufambisa masisitimu: vatambi vepamota uye vabati vemagetsi mota.

Kuchaja Pile: Magetsi Module ekukurumidza kubhadharisa michina.

4. Maindasitiri ekushandisa:

Yakakwira Voltage Inverter: Zvekushandisa maindasitiri ekudzora uye simba manejimendi.

Smart Grid: yeHVDC Kuendesa uye Simba Magetsi Shanduko.

5. Aerospace:

Yakakwira tembiricha yemagetsi: yakakodzera nzvimbo dzakanyanya tembiricha dzemidziyo yeaerospace.

6. Tsamba yekutsvaga:

Wide Bandgap Semiconductor Tsvaga: Kukura kwezvinhu zvitsva zvemukati zvemukati zvemhando uye zvishandiso.

Iyo 12-inch silicon carbide subbide rudzi rwekukwira-masevhisi emhando yepamusoro substrate nezvinhu zvakakwirira zvekutora Inoshandiswa zvakanyanya mune zvemagetsi zvigadzirwa, radio mashiripiti, mota nyowani, kudzora kwemaindasitiri uye kushushikana, uye zvinhu zvakakosha kusimudzira kusimudzira kwechizvarwa chinotevera uye chakakwirira-simba zvemagetsi midziyo yemagetsi.

Nepo Silicon Carbide parizvino ane mashoma ekushandisa magetsi akadai seAR magetsi, miniaturine emagetsi ekutsigira marimi, akanyanya-masimba masimba ekupa mari yekugadzirisa Parizvino, kukura kukuru kweSilicon Carbide Subbide

XKH yakazvipira kupa mhando yepamusoro 12 "SIC subsrates ine yakazara technical tsigiro uye masevhisi, kusanganisira:

1. Yakagadzirirwa kugadzirwa: Zvinoenderana neVatengi inoda kupa basa rakasiyana, Crystal kutarisisa uye pamusoro pehurumende yerevi.

2. Kugadzirisa Optimization: Ipa vatengi nerutsigiro rwehunyanzvi rwekukura kwe epitaxial, mudziyo wekugadzira uye mamwe maitiro ekugadzirisa zvigadzirwa zvechigadzirwa.

3. Kuedza uye Certification: Ipa zvakasimba kuremara kutarisa uye mhando yemhando yeCertification kuve nechokwadi chekuti substrate inosangana neindasitiri zviyero.

4.R & D Kubatana: Joinly Kukudziridza Nyowani Silicon Cardide zvishandiso neVatengi kusimudzira hunyanzvi hwekuvandudzwa kwehunyanzvi.

Data chati

1 2 inch silicon carbide (sic) substrate kutaurisa
Giredhi		Zoromvd Production Giredhi (Z giredhi)	Kugadzirwa kwakajairika Giredhi (P Giredhi)		Dummy giredhi (D giredhi)
Diameter		3 0 0 mm ~ 1305mm
Ukobvu	4h-n	750μm ± 15 μm	750μm ± 25 μm
	4H -SI	750μm ± 15 μm	750μm ± 25 μm
Wafer kutarisisa		Off axis: 4.0 ° kusvika ku <1120> ± 0.5 ° ye4h-n, pa Axis: <0001> 00 0.5 °
Micropipe density	4h-n	≤0.4CM-2	≤4cm-2		≤25cm-2
	4H -SI	≤5CM-2	≤10cm-2		≤25cm-2
Kuramba	4h-n	0.015 ~ 0.024 ω · cm			0.015 ~ 0.028 ω · cm
	4H -SI	≥1E10 ω · cm			≥1E5 · cm cm
Primary flat the testation		{10-10} ± 5.0 °
Yekutanga Flat Kureba	4h-n	N / a
	4H -SI	Notch
Kutsamisa kusarudzika		3 mm
LTV / TTV / Bow / Warp		≤5μm / ≤15μm / ≤35 ≤M / ≤55 μm			≤5μm / ≤15μm / ≤35 □ μM / ≤55 □ μM
Roughness		Poland ra≤1 nm
		Cmp ra≤0.2 nm			Ra00.5 nm
Mupendero makatsemuka neyekupedzisira mwenje mwenje Hex mahwendefa nemwenje wakanyanya kujeka Polytype nzvimbo neyekupedzisira mwenje mwenje Kuonekwa kwekuona carbon Silicon Surven Scatches neKhakava Chiedza Chiedza		Hapana Inharaunda yeCumulative ≤0.05% Hapana Inharaunda yeCumulative ≤0.05% Hapana			Kureba kufudza ± 20 mm, imwe chete kureba≤2 mm Nzvimbo yekukwira ≤0.1% Cumulative Area≤3% Cumulative Area ≤3% Kuwanda kureba≤1 × Wafer Dinamita
Edge machipisi neyekupedzisira kuwanda kwechiedza		Hapana anotenderwa ≥0.2mm upamhi uye kudzika			7 Inotenderwa, ≤1 mm imwe neimwe
(Tsd) kurongedza screw dislocation		≤500 cm-2		N / a
(BPD) base ndege dislocation		≤1000 cm-2		N / a
Silicon Surpain Kusvibiswa neKhadzikidzo Yakanyanya Chiedza		Hapana
Kurongedza		Multi-wafer cassette kana single wafer mudziyo
Zvinyorwa:
1 Kuremara miganhu inoshanda kune yakazara chifukidzo kunze kwekunze kwemupendero wekunze nzvimbo. 2Makaravha anofanirwa kuongororwa nechiso chete chete. 3 Dhivha dislocation data inongobva kuna Koh isina kuchinjiswa.

Xkh icharamba ichishandiswa pakutsvaga nekuvandudza kusimudzira babamunhurume gumi nevaviri. Nekuderedza mari uye kuwedzera kugona, Xkh kuchaunza budiriro kune Semiconductor Indasitiri.