12 inch SIC substrate silicon carbide prime grade dhayamita 300mm saizi hombe 4H-N Yakakodzera kupisa kwemudziyo une simba guru

Tsananguro pfupi:

Substrate yesilicon carbide ine 12-inch (SiC substrate) isubstrate yakakura, ine mashandiro epamusoro yakagadzirwa nekristaro imwe chete yesilicon carbide. Silicon carbide (SiC) imhando ye semiconductor ine gap yakakura ine hunhu hwakanaka hwemagetsi, kupisa uye michina, iyo inoshandiswa zvakanyanya mukugadzira zvishandiso zvemagetsi munzvimbo dzine simba rakawanda, frequency yakakwira uye tembiricha yakakwira. Substrate ye12-inch (300mm) ndiyo nzira yepamusoro ye silicon carbide tekinoroji, iyo inogona kuvandudza zvakanyanya kushanda zvakanaka kwekugadzira uye kuderedza mitengo.

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Zvinhu zvirimo

Hunhu hwechigadzirwa

1. Kupisa kwakanyanya: kupisa kwesilicon carbide kunopfuura ka3 pane silicon, iyo yakakodzera kupisa kwemidziyo ine simba guru.

2. Simba remunda rakapwanyika zvakanyanya: Simba remunda rakapwanyika rakapetwa kagumi pane silicon, rakakodzera kushandiswa nemhepo ine simba rakawanda.

3. Mukana webhendi wakafara: Mukana webhendi i3.26eV (4H-SiC), wakakodzera kushandiswa pakupisa kwakanyanya uye mashandisirwo efrequency yakakwira.

4. Kuomarara kwakanyanya: Kuomarara kweMohs kuri 9.2, kuri pechipiri kune dhaimani, kuramba kupfeka kwakanaka uye simba remakanika.

5. Kugadzikana kwemakemikari: kuramba ngura kwakasimba, kushanda kwakasimba munzvimbo inopisa uye yakaoma.

6. Saizi hombe: 12 inch (300mm) substrate, inovandudza kushanda zvakanaka kwekugadzira, kuderedza mutengo weyuniti.

7. Kuwanda kwezvirema zvishoma: tekinoroji yekukura kwekristaro imwe chete yemhando yepamusoro yekuona kuti zvirema zvishoma uye kuti zvinhu zvirambe zviripo nguva dzose.

Kutungamirirwa kukuru kwechigadzirwa

1. Magetsi emagetsi:

Mosfets: Inoshandiswa mumotokari dzemagetsi, madhiraivha emota dzemaindasitiri uye ma power converters.

MaDiode: akadai seSchottky diodes (SBD), anoshandiswa kugadzirisa nekushandura magetsi zvinobudirira.

2. Midziyo yeRf:

Rf power amplifier: inoshandiswa muzviteshi zvekutaurirana zve5G uye mukutaurirana kwesatellite.

Midziyo ye microwave: Yakakodzera masisitimu ekutaurirana e radar ne wireless.

3. Mota itsva dzemagetsi:

Masisitimu emagetsi ekufambisa: ma controllers emota nema inverters emotokari dzemagetsi.

Murwi wekuchaja: Module yemagetsi yemidziyo yekuchaja nekukurumidza.

4. Mashandisirwo emaindasitiri:

Inverter yemagetsi yakakwira: yekudzora mota dzemaindasitiri uye manejimendi esimba.

Gridhi rakangwara: Yemagetsi ekufambisa eHVDC uye ma transformer emagetsi emagetsi.

5. Ndege:

Zvigadzirwa zvemagetsi zvinopisa zvakanyanya: zvakakodzera nharaunda dzinopisa zvakanyanya dzemidziyo yemuchadenga.

6. Nzvimbo yekutsvagisa:

Tsvagiridzo ye semiconductor yakafara: yekugadzirwa kwezvinhu zvitsva zve semiconductor nemidziyo.

Iyo silicon carbide substrate ine 12-inch imhando ye substrate ye semiconductor material ine hunhu hwakanaka senge high thermal conductivity, high breakdown field strength uye wide band gap. Inoshandiswa zvakanyanya mumagetsi emagetsi, zvishandiso zveredhiyo, mota itsva dzesimba, kudzora maindasitiri uye ndege, uye chinhu chakakosha kusimudzira kuvandudzwa kwechizvarwa chinotevera chemidziyo yemagetsi inoshanda uye ine simba guru.

Kunyange hazvo silicon carbide substrates pari zvino isina kushandiswa zvakananga mumagetsi evatengi akadai seAR glasses, kugona kwavo mukugadzirisa simba zvakanaka uye electronics diki kunogona kutsigira mhinduro dzemagetsi dzakareruka, dzinoshanda zvakanyanya dzeAR/VR devices dzemangwana. Parizvino, kukura kukuru kwesilicon carbide substrate kwakatarisana neminda yemaindasitiri senge mota itsva dzesimba, zvivakwa zvekutaurirana uye otomatiki yemaindasitiri, uye kukurudzira indasitiri yesemiconductor kuti ikure nenzira inoshanda uye yakavimbika.

XKH yakazvipira kupa 12" SIC substrates dzemhando yepamusoro dzine rutsigiro rwakakwana rwehunyanzvi uye masevhisi, anosanganisira:

1. Kugadzirwa kwakagadzirirwa: Zvinoenderana nezvinodiwa nemutengi kupa resistivity yakasiyana, kristaro uye substrate yekurapa pamusoro.

2. Kugadzirisa mashandiro: Ipa vatengi rutsigiro rwehunyanzvi mukukura kwe epitaxial, kugadzira michina uye mamwe maitiro ekuvandudza mashandiro echigadzirwa.

3. Kuyedza uye kupihwa chitupa: Ipai chitupa chakasimba chekuona zvikanganiso uye chitupa chemhando yepamusoro kuti ive nechokwadi chekuti substrate inosangana nezvinodiwa neindasitiri.

4. Kushandira pamwe muR&D: Pamwe chete gadzirai zvishandiso zvitsva zvesilicon carbide nevatengi kuti musimudzire hunyanzvi hwetekinoroji.

Chati yedata

1 2 inch Silicon Carbide (SiC) Substrate Tsanangudzo
Giredhi		Kugadzirwa kweZeroMPD Giredhi (Giredhi Z)	Kugadzirwa Kwakajairika Giredhi (Giredhi reP)		Giredhi reDummy (Giredhi D)
Dhayamita		3 0 0 mm~305mm
Ukobvu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Kudzidziswa kweWafer		Kudzima axis: 4.0° kuenda ku <1120 >±0.5° ye4H-N, Kudzima axis: <0001>±0.5° ye4H-SI
Kuwanda kwepombi dze micropombi	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kuramba	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kutungamira Kwakatsetseka Kwepakutanga		{10-10} ±5.0°
Hurefu Hwepamusoro-soro	4H-N	Hazvina kukwana
	4H-SI	Notch
Kusabatanidzwa kweMupendero		3 mm
LTV/TTV/Uta /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Kuomarara		ChiPolish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mipata yemucheto nechiedza chakasimba Hex Plates Nechiedza Chakanyanya Kusimba Nzvimbo dzePolytype Nechiedza Chakanyanya Kusimba Kubatanidzwa kweKabhoni Inoonekwa Kukwenya Kwepamusoro peSilicon Nechiedza Chakanyanya Kusimba		Hapana Nzvimbo yakaunganidzwa ≤0.05% Hapana Nzvimbo yakaunganidzwa ≤0.05% Hapana			Kureba kwakaunganidzwa ≤ 20 mm, kureba kumwe chete ≤2 mm Nzvimbo yakaunganidzwa ≤0.1% Nzvimbo yakaunganidzwa ≤3% Nzvimbo yakaunganidzwa ≤3% Kureba kwakawedzerwa ≤1 × dhayamita yechinwiwa
Edge Chips Nechiedza Chakanyanya Kusimba		Hapana chinobvumidzwa ≥0.2mm upamhi uye kudzika			7 dzinobvumidzwa, ≤1 mm imwe neimwe
(TSD) Kubviswa kwe threading screw		≤500 cm-2		Hazvina kukwana
(BPD) Kubviswa kwendege yepasi		≤1000 cm-2		Hazvina kukwana
Kusvibiswa kweSilicon pamusoro neHigh Intensity Light		Hapana
Kurongedza		Kaseti yeWafer yakawanda kana mudziyo weWafer imwe chete
Zvinyorwa:
1. Miganhu yekukanganisika inoshanda pamusoro pewafer yese kunze kwenzvimbo isina kuvharwa pamucheto. 2 Mavanga acho anofanira kuongororwa pachiso cheSi chete. 3 Ruzivo rwekubviswa kwechinhu runobva kumawafers eKOH chete.

XKH icharamba ichiisa mari mukutsvagisa nekusimudzira kuti isimudzire budiriro ye 12-inch silicon carbide substrates muhukuru hwakakura, zvikanganiso zvishoma uye kugadzikana kwakanyanya, ukuwo XKH ichiongorora mashandisirwo ayo munzvimbo dziri kutsva dzakadai semagetsi evatengi (senge mamodule emagetsi eAR/VR devices) uye quantum computing. Nekuderedza mitengo nekuwedzera kugona, XKH ichaunza budiriro kuindasitiri ye semiconductor.