Chikepe cheSilicon Carbide (SiC) Wafer

Mufananidzo weSilicon Carbide (SiC) Wafer Boat

Tsananguro pfupi:

Chikepe cheSilicon Carbide (SiC) wafer chinotakura zvinhu zve semiconductor chakagadzirwa nezvinhu zveSiC zvakachena kwazvo, chakagadzirirwa kubata nekutakura mawafer panguva dzekupisa kwakanyanya dzakadai se epitaxy, oxidation, diffusion, uye annealing.

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Zvinhu zvirimo

Dhayagiramu Yakadzama

Pfupiso yeGirazi reQuartz

Nekukurumidza kukura kwema semiconductor emagetsi uye zvishandiso zvebandgap yakakura, zvikepe zve quartz zvechinyakare zvinosangana nezvinetso zvakaita sekushanduka kwemamiriro ekunze pakupisa kwakanyanya, kusvibiswa kwakanyanya kwezvikamu, uye hupenyu hupfupi hwebasa. zvikepe zve SiC wafer, zvine kugadzikana kwakanyanya kwekupisa, kusvibiswa kushoma, uye hupenyu hwakareba, zviri kuramba zvichitsiva zvikepe zve quartz uye zvichiva sarudzo inofarirwa mukugadzira zvishandiso zve SiC.

Zvinhu Zvikuru

1. Zvakanakira Zvinhu

Yakagadzirwa neSiC yakachena kwazvo inekuomarara kwakanyanya uye simba.
Nzvimbo yekunyunguduka iri pamusoro pe2700°C, yakakwirira kupfuura quartz, zvichiita kuti pave nekugadzikana kwenguva refu munzvimbo dzakaoma.

2. Zvimiro zvekupisa

Kupisa kwakanyanya kunofambisa kupisa nekukurumidza uye kwakafanana, zvichideredza kushushikana kwewafer.
Coefficient of thermal expansion (CTE) inoenderana zvakanyanya neSiC substrates, zvichiita kuti wafer ipfuure nekutsemuka.

3. Kugadzikana kweMakemikoro

Yakagadzikana pasi pekupisa kwakanyanya uye mamiriro ekunze akasiyana-siyana (H₂, N₂, Ar, NH₃, nezvimwewo).
Kudzivirira oxidation kwakanaka, kudzivirira kuora uye kugadzirwa kwezvikamu.

4. Kushanda Kwemaitiro

Nzvimbo yakatsetseka uye yakakora inoderedza kubuda kwezvimedu uye kusvibiswa.
Inochengetedza kugadzikana kwehukuru uye mutoro wayo mushure mekushandiswa kwenguva refu.

5. Kushanda Nesimba Mukutenga

Hupenyu hwebasa hwakareba ka3–5 kupfuura mabhoti e quartz.
Kuderedza nguva yekugadzirisa, zvichideredza nguva yekushanda uye mari yekutsiva.

Mashandisirwo

SiC Epitaxy: Inotsigira ma substrates eSiC ane 4-inch, 6-inch, uye 8-inch panguva yekukura kwe epitaxial inodziya zvakanyanya.
Kugadzira Chishandiso Chemagetsi: Yakanakira SiC MOSFETs, Schottky Barrier Diodes (SBDs), IGBTs, nezvimwe zvishandiso.
Kurapa Kwekupisa: Maitiro ekuwedzera, kugadzira nitridation, uye carbonization.
Kuoxidation & Kupararira: Chikuva chekutsigira chewafer chakagadzikana chekuoxidation uye kupararira kwemafuta panguva yekupisa kwakanyanya.

Magadzirirwo ehunyanzvi

Chinhu	Tsanangudzo
Zvinhu	Silicon Carbide (SiC) yakachena kwazvo
Saizi yeWafer	4-inch / 6-inch / 8-inch (inogona kugadziriswa)
Tembiricha Yekushanda Yakanyanya.	≤ 1800°C
Kuwedzera kweThermal CTE	4.2 × 10⁻⁶ /K (pedyo neSiC substrate)
Kufambisa kwekupisa	120–200 W/m·K
Kuoma Kwepamusoro	Ra < 0.2 μm
Kufanana	± 0.1 mm
Hupenyu hweBasa	≥ 3× kureba kupfuura magwa e quartz

Kuenzanisa: Chikepe cheQuartz vs. Chikepe cheSiC

Chiyero	Chikepe cheQuartz	Chikepe cheSiC
Kuramba Kupisa	≤ 1200°C, kuchinja kweganda pakupisa kwakanyanya.	≤ 1800°C, yakagadzikana pakupisa
Mutambo weCTE neSiC	Kusawirirana kukuru, njodzi yekushushikana kwewafer	Kubatana kwakasimba, kunoderedza kutsemuka kwewafer
Kusvibiswa kwezvikamu	Yakakwirira, inogadzira tsvina	Nzvimbo yakaderera, yakatsetseka uye yakakora
Hupenyu hweBasa	Kutsiviwa kwenguva pfupi, kazhinji	Nguva refu, 3–5× hupenyu hwakareba
Maitiro Akakodzera	Kazhinji Si epitaxy	Yakagadzirirwa SiC epitaxy & zvishandiso zvemagetsi

Mibvunzo Inowanzo bvunzwa - Silicon Carbide (SiC) Wafer Boats

1. Chii chinonzi SiC wafer boat?

Chikepe cheSiC wafer chinotakura zvinhu zve semiconductor chakagadzirwa nesilicon carbide yakachena kwazvo. Chinoshandiswa kubata nekutakura mawafer panguva dzekupisa kwakanyanya senge epitaxy, oxidation, diffusion, uye annealing. Zvichienzaniswa nezvikepe zve quartz zvechinyakare, zvikepe zveSiC wafer zvinopa kugadzikana kwakanyanya kwekupisa, kusvibiswa kwakaderera, uye hupenyu hwebasa hwakareba.

2. Sei uchifanira kusarudza zvikepe zveSiC wafer pane zvikepe zvequartz?

Kudzivirira kupisa kwakanyanya: Yakagadzikana kusvika 1800°C zvichienzaniswa ne quartz (≤1200°C).
Kuenzanisa kweCTE kuri nani: Pedyo neSiC substrates, zvichideredza kushushikana kwewafer nekutsemuka.
Kugadzirwa kwezvikamu zvishoma: Nzvimbo yakatsetseka, yakakora inoderedza kusvibiswa.
Nguva refu yehupenyu: Nguva yakareba ka3–5 kupfuura magwa e quartz, zvichideredza mutengo wekuva muridzi.

3. Mabhoti eSiC anogadzika mawafer saizi dzipi anogona kushandiswa?

Isu tinopa magadzirirwo akajairwa e4-inch, 6-inch, uye 8-inchmawafer, ane zvese zvakagadziridzwa zviripo kuti zvienderane nezvinodiwa nevatengi.

4. Mabhoti eSiC wafer anowanzo shandiswa mumabasa api?

Kukura kweSiC epitaxial
Kugadzira zvishandiso zvemagetsi zve semiconductor (SiC MOSFETs, SBDs, IGBTs)
Kupisa kwakanyanya, kunyorovesa, uye carbonization
Maitiro eOxidation uye kupararira

Nezvedu

XKH inonyanya kugadzira, kugadzira, uye kutengesa magirazi egirazi egirazi uye zvinhu zvitsva zvekristaro. Zvigadzirwa zvedu zvinopa zvigadzirwa zvemagetsi, zvemagetsi zvevatengi, uye zvemauto. Tinopa zvikamu zveSapphire optical, malenzi efoni, Ceramics, LT, Silicon Carbide SIC, Quartz, uye mawafer egirazi esemiconductor. Tine hunyanzvi uye michina yemazuva ano, tinobudirira mukugadzirisa zvigadzirwa zvisiri zvemazuva ano, tichivavarira kuva bhizinesi rinotungamira rezvigadzirwa zvemagetsi.