Silicon Carbide (SiC) Substrate yeSirista imwe chete – 10×10mm Wafer
Dhayagiramu Yakadzama yeSilicon Carbide (SiC) substrate wafer
Pfupiso yeSilicon Carbide (SiC) substrate wafer
IyoWafer yesimbi ine 10×10mm Silicon Carbide (SiC) imwe cheteimhando yepamusoro ye semiconductor yakagadzirwa kuti ishandiswe mumagetsi emagetsi echizvarwa chinotevera uye mashandisirwo e optoelectronic. Silicon Carbide (SiC) substrate wafer ine thermal conductivity yakanaka, gap yakafara, uye kugadzikana kwakanaka kwemakemikari, inopa hwaro hwezvishandiso zvinoshanda zvakanaka mumamiriro ekupisa kwakanyanya, mafrequency akakwira, uye voltage yakakwira. Izvi zvinogadziriswa nemazvo.Machipisi akaenzana ne10 × 10mm, yakakodzera kutsvagisa, kugadzira maprototype, uye kugadzira michina.
Nheyo yekugadzira Silicon Carbide (SiC) substrate wafer
Silicon Carbide (SiC) substrate wafer inogadzirwa kuburikidza nenzira dzePhysical Vapor Transport (PVT) kana sublimation growth. Maitiro acho anotanga ne high-purity SiC powder yakaiswa mu graphite crucible. Kana tembiricha yakanyanya ichipfuura 2,000°C uye nzvimbo yakadzorwa, upfu hunonyungudika kuita utsi uye hunoiswazve pa seed crystal yakanyatsorongeka, zvichiita ingot huru, isina kuremara.
Kana SiC boule yakura, inotanga:
- Kucheka Ingot: Macheka ewaya edhaimani akagadzirwa nemazvo anocheka SiC ingot kuita mawafer kana machipisi.
- Kukwesha nekukuya: Nzvimbo dzinoitwa kuti dzisakweshe kubvisa mavanga ejeko uye ukobvu hwakaenzana.
- Kupukuta Kwemakemikari (CMP): Kunopedzisa girazi rakagadzirira epi rine kukwesha kwakanyanya pamusoro.
- Kuisa doping yesarudzo: Kuisa doping yenitrogen, aruminiyamu, kana boron kunogona kuiswa kuti kugadzirise hunhu hwemagetsi (n-type kana p-type).
- Kuongororwa kwemhando yepamusoro: Advanced metrology inoita kuti wafer isatsvedze, ukobvu hwayo hwakaenzana, uye defect density zvienderane nezvinodiwa zvakasimba zve semiconductor-grade.
Maitiro aya ane matanho akawanda anoita kuti pave nemachipisi esimbi e10×10mm Silicon Carbide (SiC) akasimba akagadzirira kukura kwe epitaxial kana kugadzirwa kwemidziyo zvakananga.
Hunhu hweSilicon Carbide (SiC) substrate wafer
Wafer yeSilicon Carbide (SiC) substrate inogadzirwa zvakanyanya ne4H-SiC or 6H-SiCmhando dzakasiyana-siyana:
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4H-SiC:Iine maerekitironi akawanda anofamba, zvichiita kuti ive yakakodzera michina yemagetsi yakaita seMOSFETs uye Schottky diodes.
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6H-SiC:Inopa hunhu hwakasiyana hweRF ne optoelectronic components.
Hunhu hukuru hweSilicon Carbide (SiC) substrate wafer:
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Mukana wakakura:~3.26 eV (4H-SiC) - inogonesa voltage yakanyanya kukanganiswa uye kurasikirwa kweswitching kwakaderera.
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Kufambisa kwekupisa:3–4.9 W/cm·K – inobvisa kupisa zvinobudirira, ichivimbisa kugadzikana mumasisitimu ane simba guru.
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Kuoma:~9.2 pachikero cheMohs - inoita kuti michina igare kwenguva refu panguva yekugadzirisa uye kushanda kwemuchina.
Kushandiswa kweSilicon Carbide (SiC) substrate wafer
Kushandiswa kwakasiyana-siyana kweSilicon Carbide (SiC) substrate wafer kunoita kuti ive yakakosha mumaindasitiri akasiyana-siyana:
Magetsi Emagetsi: Hwaro hweMOSFET, IGBTs, uye Schottky diodes dzinoshandiswa mumotokari dzemagetsi (EVs), magetsi emumaindasitiri, uye ma inverters esimba rinogona kudzokororwa.
RF & Microwave Devices: Inotsigira ma transistors, ma amplifiers, uye zvikamu zve radar zve 5G, satellite, uye maapplication ekudzivirira.
Optoelectronics: Inoshandiswa mumaUV LED, maphotodetector, uye ma laser diodes uko kujeka kwakanyanya kweUV uye kugadzikana kwakakosha.
Mudenga neDziviriro: Nzvimbo yakavimbika yemagetsi anodziya zvakanyanya uye akaomarara nemwaranzi.
Masangano Ekutsvagisa neMayunivhesiti: Yakanakira zvidzidzo zvesainzi yezvinhu, kugadzira michina yemuenzaniso, uye kuyedza maitiro matsva e epitaxial.

Magadzirirwo eSilicon Carbide (SiC) substrate wafer Chips
| Pfuma | Kukosha |
|---|---|
| Saizi | 10mm × 10mm sikweya |
| Ukobvu | 330–500 μm (inogona kugadziriswa) |
| Mhando yePolytype | 4H-SiC kana 6H-SiC |
| Kudzidziswa | C-ndege, isina divi (0°/4°) |
| Kupedzisa Kwepamusoro | Yakaporishwa nerutivi rumwe chete kana kuti mativi maviri; yakagadzirira epi inowanikwa |
| Sarudzo dzekushandisa mushonga wedoro | N-rudzi kana P-rudzi |
| Giredhi | Giredhi rekutsvagisa kana giredhi remudziyo |
Mibvunzo Inowanzo bvunzwa nezve Silicon Carbide (SiC) substrate wafer
Mubvunzo 1: Chii chinoita kuti Silicon Carbide (SiC) substrate wafer ive nani pane silicon wafers dzechinyakare?
SiC inopa simba remagetsi rakakwira ne10×, inodzivirira kupisa zvakanyanya, uye inorasikirwa nekuchinja-chinja zvishoma, zvichiita kuti ive yakakodzera michina inoshanda zvakanyanya uye ine simba rakawanda iyo silicon isingakwanise kutsigira.
Mubvunzo wechipiri: Ko 10×10mm Silicon Carbide (SiC) substrate wafer inogona kupihwa epitaxial layers here?
Ehe. Tinopa ma substrates akagadzirira epi uye tinogona kuendesa ma wafers ane ma epitaxial layers akagadzirwa kuti aenderane nezvinodiwa zvemagetsi kana LED.
Mubvunzo wechitatu: Saizi dzakasarudzika uye mazinga ekushandisa zvinodhaka zviripo here?
Zvechokwadi. Kunyange zvazvo machipisi e10×10mm ariwo akajairika pakutsvaga nekutorwa kwesampuli yemidziyo, saizi, ukobvu, uye mapurofayiri ekushandisa zvinodhaka anowanikwa kana zvakumbirwa.
Mubvunzo wechina: Mawafer aya akasimba zvakadii munzvimbo dzakaoma?
SiC inochengetedza hunyanzvi hwekuvaka uye mashandiro emagetsi ari pamusoro pe600°C uye pasi pemwaranzi yakawanda, zvichiita kuti ive yakakodzera kushandiswa mundege nemagetsi epamusoro pemauto.
Nezvedu
XKH inonyanya kugadzira, kugadzira, uye kutengesa magirazi egirazi egirazi uye zvinhu zvitsva zvekristaro. Zvigadzirwa zvedu zvinopa zvigadzirwa zvemagetsi, zvemagetsi zvevatengi, uye zvemauto. Tinopa zvikamu zveSapphire optical, malenzi efoni, Ceramics, LT, Silicon Carbide SIC, Quartz, uye mawafer egirazi esemiconductor. Tine hunyanzvi uye michina yemazuva ano, tinobudirira mukugadzirisa zvigadzirwa zvisiri zvemazuva ano, tichivavarira kuva bhizinesi rinotungamira rezvigadzirwa zvemagetsi.












