Silicon Carbide SiC Ingot 6inch N mhando Dummy/prime giredhi ukobvu inogona ba customized

Tsanangudzo Pfupi:

Silicon Carbide (SiC) ndeye yakakura-bandgap semiconductor zvinhu iyo iri kuwana yakakosha traction pane dzakasiyana siyana maindasitiri nekuda kwehukuru hwayo hwemagetsi, hwekudziya, uye mechanika. Iyo SiC Ingot mu6-inch N-mhando Dummy/Prime giredhi yakanyatsogadzirirwa kugadzirwa kwemhando yepamusoro semiconductor zvishandiso, zvinosanganisira yakakwirira-simba uye yakakwirira-frequency application. Iine customizable ukobvu sarudzo uye chaiwo mataurirwo, iyi SiC ingot inopa mhinduro yakanakira kugadzirwa kwemidziyo inoshandiswa mumotokari dzemagetsi, masisitimu emagetsi emaindasitiri, kufambiswa kwemashoko, uye mamwe matunhu anoshanda zvakanyanya. SiC's robustness in high-voltage, high-temperature, uye high-frequency conditions inovimbisa kushanda kwenguva refu, inobudirira, uye yakavimbika mune zvakasiyana-siyana zvekushandisa.
Iyo SiC Ingot inowanikwa muhukuru 6-inch, ine dhayamita ye150.25mm ± 0.25mm uye ukobvu hwakakura kupfuura 10mm, zvichiita kuti ive yakakodzera kuchekwa kwewafer. Ichi chigadzirwa chinopa yakanyatsotsanangurwa pamusoro pekutarisa kwe4 ° yakananga <11-20> ± 0.2 °, kuve nechokwadi chepamusoro mukugadzirwa kwemidziyo. Pamusoro pezvo, iyo ingot inoratidzira yekutanga furati yekumisikidza ye <1-100> ± 5 °, inobatsira kune yakakwana kurongeka kwekristaro uye mashandiro ekugadzirisa.
Iine high resistivity muhuwandu hwe 0.015-0.0285 Ω · cm, yakaderera micropipe density ye <0.5, uye yakanakisa kumucheto kwemhando, iyi SiC Ingot inokodzera kugadzirwa kwemidziyo yemagetsi inoda kukanganisa kudiki uye kushanda kwepamusoro pasi pemamiriro akanyanya.

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Product Tags

Properties

Giredhi: Giredhi rekugadzira (Dummy/Prime)
Saizi: 6-inch dhayamita
Dhayamita: 150.25mm ± 0.25mm
Ukobvu:> 10mm (Customizable ukobvu inowanikwa pakukumbira)
Surface Oientation: 4 ° yakananga <11-20> ± 0.2 °, iyo inova nechokwadi chepamusoro chekristaro uye kurongeka kwakaringana kwekugadzira mudziyo.
Primary Flat Oientation: <1-100> ± 5 °, chinhu chakakosha chekucheka kwakanyatsoita kweingot kuita mawafer uye nekukura kwekristaro.
Primary Flat Length: 47.5mm ± 1.5mm, yakagadzirirwa kubata nyore uye kucheka chaiko.
Resistivity: 0.015–0.0285 Ω · cm, yakanakira maapplication ari mumhando yepamusoro-simba emagetsi.
Micropipe Density: <0.5, kuona hurema hudiki hunogona kukanganisa kuita kwemidziyo yakagadzirwa.
BPD (Boron Pitting Density): <2000, mutengo wakaderera unoratidza kuchena kwekristaro uye kuderera kwehurema.
TSD (Threading Screw Dislocation Density): <500, kuve nechokwadi chekuvimbika kwezvinhu zvemhando yepamusoro-inoshanda.
Nzvimbo dzePolytype: Hapana - iyo ingot haina hurema hwepolytype, ichipa emhando yepamusoro yemhando yepamusoro-yekupedzisira maapplication.
Edge Indents: <3, ine 1mm hupamhi uye kudzika, kuve nechokwadi kudiki kukuvadzwa kwepasi uye kuchengetedza kutendeseka kweingot yekunyatsocheka wafer slicing.
Edge Cracks: 3, <1mm imwe neimwe, ine yakaderera kuitika kwekukuvadza kumucheto, kuve nechokwadi chekubata kwakachengeteka uye kuenderera mberi nekugadzirisa.
Packing: Wafer kesi - iyo SiC ingot yakarongedzwa zvakachengeteka mune wafer kesi kuti ive nechokwadi chekufambisa uye kubata kwakachengeteka.

Applications

Power Electronics:Iyo 6-inch SiC ingot inoshandiswa zvakanyanya mukugadzirwa kwemagetsi emagetsi emagetsi akadai seMOSFETs, IGBTs, uye diode, izvo zvakakosha zvikamu mumagetsi ekushandura masisitimu. Midziyo iyi inoshandiswa zvakanyanya mumotokari yemagetsi (EV) inverters, madhiraivha emota maindasitiri, magetsi emagetsi, uye masisitimu ekuchengetedza simba. Kugona kweSiC kushanda pamagetsi akakwira, ma frequency epamusoro, uye tembiricha yakanyanyisa inoita kuti ive yakanakira maapplication uko echinyakare silicon (Si) zvishandiso zvinonetsa kuita nemazvo.

Mota dzemagetsi (EVs):Mumotokari dzemagetsi, maSiC-based components akakosha pakuvandudzwa kwemamodule emagetsi mumainverters, DC-DC converters, uye on-board charger. Iyo yepamusoro yekupisa conductivity yeSiC inobvumira kudzikiswa kwekupisa uye kuita zvirinani mukushandurwa kwemagetsi, izvo zvakakosha mukusimudzira mashandiro uye kutyaira huwandu hwemotokari dzemagetsi. Pamusoro pezvo, zvishandiso zveSiC zvinogonesa zvidiki, zvakareruka, uye zvimwe zvakavimbika zvikamu, zvichibatsira mukuita kwese kweEV masisitimu.

Renewable Energy Systems:SiC ingots chinhu chakakosha mukugadzirwa kwemagetsi ekushandura magetsi anoshandiswa mumasisitimu emagetsi anogona kudzokororwa, anosanganisira solar inverters, mhepo turbines, uye simba rekuchengetedza mhinduro. SiC's yakakwirira-simba-kubata masimba uye inobudirira yekutonga kwemafuta inobvumira kukwirira kwesimba rekushandura kugona uye kuvimbika kwakagadziridzwa mune idzi masisitimu. Kushandiswa kwaro musimba rinodzokororwa kunobatsira kufambisa kuedza kwepasirese kune kuchengetedza simba.

TelecommunicationIyo 6-inch SiC ingot inokodzerawo kugadzira zvinhu zvinoshandiswa mune yakakwirira-simba RF (redhiyo frequency) application. Izvi zvinosanganisira amplifiers, oscillators, uye mafirita anoshandiswa munharembozha uye setiraiti yekutaurirana masisitimu. Iko kugona kweSiC kubata yakakwira ma frequency uye simba repamusoro inoita kuti ive chinhu chakanakisa chemidziyo yekufonera inoda kuita kwakasimba uye kushoma kwechiratidzo kurasikirwa.

Aerospace uye Dziviriro:SiC's high breakdown voltage uye kuramba kune tembiricha yakakwira inoita kuti ive yakanaka kune aerospace uye yekudzivirira maapplication. Zvikamu zvinogadzirwa kubva kuSiC ingots zvinoshandiswa mu radar masisitimu, satellite kutaurirana, uye magetsi emagetsi endege uye spacecraft. SiC-based materials inogonesa masisitimu emuchadenga kuti aite pasi pemamiriro akanyanya kusangana munzvimbo nenzvimbo dzepamusoro-soro.

Industrial Automation:Muindasitiri otomatiki, zvikamu zveSiC zvinoshandiswa mumasensa, ma actuators, uye masisitimu ekudzora anoda kushanda munzvimbo dzakaoma. SiC-yakavakirwa michina inoshandiswa mumichina inoda inoshanda, inogara kwenguva refu zvikamu zvinokwanisa kutsungirira tembiricha yakakwira uye kushushikana kwemagetsi.

Chigadzirwa Specification Tafura

Property	Tsanangudzo
Giredhi	Kugadzirwa (Dummy/Prime)
Size	6-inch
Diameter	150.25mm ± 0.25mm
Ukobvu	>10mm (Customizable)
Surface Oientation	4° kuenda <11-20> ± 0.2°
Yekutanga Flat Oriental	<1-100> ± 5°
Primary Flat Length	47.5mm ± 1.5mm
Resistivity	0.015–0.0285 Ω·cm
Micropipe Density	<0.5
Boron Pitting Density (BPD)	<2000
Threading Screw Dislocation Density (TSD)	<500
Polytype Nzvimbo	Hapana
Edge Indents	<3, 1mm hupamhi nekudzika
Edge Cracks	3, <1mm/ea
Packing	Wafer kesi

Mhedziso

Iyo 6-inch SiC Ingot - N-mhando Dummy/Prime giredhi ndeye premium zvinhu zvinosangana neakaomarara zvinodiwa zveiyo semiconductor indasitiri. Yayo yakanyanya kupisa conductivity, yakasarudzika resistivity, uye yakaderera density inoita kuti ive sarudzo yakanaka kwazvo yekugadzirwa kwemagetsi emagetsi epamberi, zvikamu zvemotokari, masisitimu ekufambisa mashoko, uye masisitimu emagetsi anovandudzwa. Ukobvu hunogoneka uye hutsananguro hwechokwadi hunovimbisa kuti iyi SiC ingot inogona kugadzirwa kune dzakasiyana siyana dzekushandisa, kuve nechokwadi chekushanda kwepamusoro uye kuvimbika munzvimbo dzinoda. Kuti uwane rumwe ruzivo kana kuisa odha, ndapota taura neboka redu rekutengesa.