Silicon carbide kuramba refu crystal choto ichikura 6/8/12inch inch SiC ingot crystal PVT nzira

Tsanangudzo Pfupi:

Silicon carbide resistance growth furnace (PVT nzira, yemuviri mhute yekufambisa nzira) chinhu chakakosha chekukura kwesilicon carbide (SiC) single crystal nepamusoro tembiricha sublimation-recrystallization musimboti. Iyo tekinoroji inoshandisa kuramba kudziyisa (graphite kudziyisa muviri) kudzikisa iyo SiC mbishi zvinhu patembiricha yakakwira ye2000 ~ 2500 ℃, uye kudzoreredza munzvimbo yakaderera tembiricha (mhodzi yekristaro) kuumba yemhando yepamusoro SiC single crystal (4H/6H-SiC). Nzira yePVT ndiyo nzira huru yekugadzirwa kwakawanda kweSiC substrates ye6 inches uye pazasi, iyo inoshandiswa zvakanyanya mukugadzirisa substrate yemagetsi semiconductors (senge MOSFETs, SBD) uye radio frequency zvishandiso (GaN-on-SiC).

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Kushanda musimboti:

1. Raw material loading: high purity SiC powder (kana block) yakaiswa pasi pe graphite crucible (high temperature zone).

2. Vacuum / inert nharaunda: vacuum mukamuri yevira (<10⁻³ mbar) kana kupfuura inert gasi (Ar).

3. High tembiricha sublimation: kuramba kupisa kusvika 2000 ~ 2500 ℃, SiC kuora muSi, Si₂C, SiC₂ uye zvimwe gasi chikamu zvikamu.

4. Gas phase transmission: tembiricha gradient inotyaira kupararira kwegasi chikamu zvinhu kune yakaderera tembiricha dunhu (mbeu yekupedzisira).

5. Kukura kweCrystal: Chikamu chegasi chinodzokororazve pamusoro peMbeu yeCrystal uye inokura munzira inoenda kune C-axis kana A-axis.

Key parameters:

1. Temperature gradient: 20 ~ 50 ℃/cm (kudzora kukura uye kuremara density).

2. Kudzvinyirira: 1 ~ 100mbar (yakaderera kudzvinyirira kuderedza kusvibiswa kubatanidzwa).

3.Kukura kwehuwandu: 0.1 ~ 1mm / h (inobata kristall quality uye kubudirira kwekugadzira).

Main features:

(1) Hunhu hwekristaro
Low defect density: microtubule density <1 cm⁻², dislocation density 10³~10⁴ cm⁻² (kuburikidza nembeu optimization uye maitiro ekugadzirisa).

Polycrystalline type control: inogona kukura 4H-SiC (mainstream), 6H-SiC, 4H-SiC chikamu> 90% (inoda kunyatso kudzora tembiricha gradient uye gasi chikamu stoichiometric ratio).

(2) Equipment performance
Kugadzikana kwekushisa kwepamusoro: graphite kupisa tembiricha yemuviri> 2500 ℃, muchoto muviri unotora akawanda-layer insulation dhizaini (senge graphite inonzwa + mvura-yakatonhorera bhachi).

Uniformity control: Axial/radial tembiricha kuchinja kwe ± 5 ° C inova nechokwadi chekristaro dhayamita isingachinji (6-inch substrate ukobvu kutsauka <5%).

Degree of otomatiki: Yakabatanidzwa PLC control system, chaiyo-nguva yekutarisa tembiricha, kudzvanywa uye kukura mwero.

(3) Zvakanakira zvemichina
Kushandiswa kwezvinhu zvakakwirira: chiyero chekushandurwa kwezvinhu zvakasvibiswa> 70% (zviri nani pane nzira yeCVD).

Yakakura saizi kuenderana: 6-inch misa yekugadzira yave kuwanikwa, 8-inch iri mudanho rekusimudzira.

(4) Simba rekushandisa uye mari
Kushandiswa kwesimba kwechoto chimwe chete ndiko 300 ~ 800kW · h, kuverenga 40% ~ 60% yemutengo wekugadzira weSiC substrate.

Iko mari yekushandisa yakakwira (1.5M 3M payuniti), asi iyo unit substrate mutengo yakaderera pane iyo CVD nzira.

Core applications:

1. Simba remagetsi: SiC MOSFET substrate yemagetsi inverter yemotokari uye photovoltaic inverter.

2. Rf zvishandiso: 5G base station GaN-on-SiC epitaxial substrate (kunyanya 4H-SiC).

3. Yakanyanyisa midziyo yemamiriro ekunze: tembiricha yakakwira uye yakanyanya kudzvanywa sensors yeaerospace uye midziyo yesimba renyukireya.

Technical parameters:

Tsanangudzo	Details
Dimensions (L × W × H)	2500 × 2400 × 3456 mm kana kugadzirisa
Crucible Diameter	900 mm
Ultimate Vacuum Pressure	6 × 10⁻⁴ Pa (mushure me1.5h yevacuum)
Leakage Rate	≤5 Pa/12h (kubikira kunze)
Kutenderera Shaft Diameter	50 mm
Kutenderera Speed	0.5-5 rpm
Heating Method	Kupisa kwemagetsi
Maximum Furnace Temperature	2500°C
Kupisa Simba	40 kW × 2 × 20 kW
Tembiricha Kuyera	Dual-ruvara infrared pyrometer
Temperature Range	900–3000°C
Tembiricha Yakarurama	±1°C
Pressure Range	1-700 mbar
Pressure Control Kururama	1–10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100–700 mbar: ±0.5% FS
Operation Type	Pazasi kurodha, manyorero / otomatiki kuchengetedza sarudzo
Optional Features	Dual tembiricha kuyerwa, akawanda kupisa nzvimbo

XKH Services:

XKH inopa iyo yese process sevhisi yeSiC PVT furnace, kusanganisira gadziriso yemidziyo (thermal field design, automatic control), process development (crystal shape control, defect optimization), technical training (operation and maintenance) uye after-sales support (graphite parts replacement, thermal field calibration) kubatsira vatengi kuwana yepamusoro-mhando sic crystal mass production. Isu tinopawo maitiro ekusimudzira masevhisi kuti arambe achivandudza goho rekristaro nekukura kwakanaka, ine yakajairwa nguva yekutungamira yemwedzi 3-6.